STMicroelectronics STP26NM60ND

Overview

STP26NM60ND from STMicroelectronics is an N-channel 600 V, 0.145 Ω typ. R_DS(on), 21 A FDmesh™ II Power MOSFET in TO-220 package with intrinsic fast-recovery body diode. It delivers high dv/dt ruggedness (40 V/ns), 100% avalanche tested reliability, and low gate charge (54.6 nC), enabling use in high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STP26NM60ND datasheet, STP26NM60ND pinout, STP26NM60ND application, or STP26NM60ND equivalent, key selection criteria include its 600 V V_DS, 21 A continuous drain current at T_C = 25 °C, 0.66 °C/W junction-to-case thermal resistance, and fast-recovery diode with 170 ns t_rr at 25 °C.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ strip-layout vertical structure to achieve ultra-low on-resistance and superior switching performance. Its design integrates a fast-recovery body diode with 1.6 V forward voltage at 21 A and 2.24 µC Q_rr at 150 °C - critical for reducing switching losses in hard-switched and resonant topologies.

The device supports high-voltage operation up to 600 V with ±25 V gate drive tolerance and exhibits robust unclamped inductive switching capability (E_AS = 100 mJ). Its 40 V/ns dv/dt ruggedness and 150 °C max junction temperature enable stable operation in demanding industrial power supplies and motor drives.

Key Specifications

Pinout & Package

STP26NM60ND uses the TO-220 package with standard three-terminal configuration: Drain connected to tab, Source and Gate on leads. The metal tab is electrically connected to the Drain terminal and serves as primary heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and IXFH32N60P, STP26NM60ND offers the lowest R_DS(on) (0.145 Ω) in TO-220 format with built-in fast diode - making it optimal for space-constrained, medium-power ZVS and bridge designs where diode integration and thermal density matter most.

Availability

STP26NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, ZVS phase-shift converters, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STP26NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion systems - emphasizing low R_DS(on), fast diode integration, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for STP26NM60ND at 100 °C case temperature?

The maximum continuous drain current is 13 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package, where junction-to-case thermal resistance (0.66 °C/W) and ambient conditions constrain safe operating area at elevated temperatures.

Does STP26NM60ND require a gate resistor for stability in hard-switching applications?

Yes - a gate resistor between 4.7 Ω and 10 Ω is recommended to dampen ringing caused by parasitic inductance and the device's 2.5 Ω intrinsic gate resistance. This value balances switching speed (td(on)/td(off)) and EMI suppression, especially in bridge configurations with high dv/dt (40 V/ns).

Can STP26NM60ND be used as a direct replacement for STP20NM60FD in existing designs?

No - although both are 600 V TO-220 N-channel MOSFETs, STP20NM60FD has 0.22 Ω R_DS(on) and no fast-recovery diode, whereas STP26NM60ND features 0.145 Ω R_DS(on) and integrated fast diode (t_rr = 170 ns). Layout and gate drive may require adjustment due to lower capacitance and different diode behavior.

Is the metal tab of STP26NM60ND electrically isolated from the leads?

No - the metal tab is internally connected to the Drain terminal, as confirmed by the internal schematic (Figure 1) and mechanical drawings. When mounting to a heatsink, an insulating pad or shoulder washer must be used if the heatsink is grounded or at a different potential than the Drain node.