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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP270N4F3

Name: STP270N4F3
Brand: STMicroelectronics
SKU: STP270N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP270N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP270N4F3.pdf

Description:: MOSFET N-CH 40V 120A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP270N4F3 from STMicroelectronics is an automotive-grade N-channel 40 V Power MOSFET in D²PAK (TO-263) package, featuring 1.6 mΩ typ. R_DS(on), 160 A continuous drain current, and AEC-Q101 qualification. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and motor control in 12 V/24 V vehicle systems.

For engineers reviewing the STP270N4F3 datasheet, STP270N4F3 pinout, STP270N4F3 application, or STP270N4F3 equivalent, key selection criteria include avalanche ruggedness (1 J single-pulse EAS), gate charge (110–150 nC), thermal resistance (0.45 °C/W j-case), and diode recovery performance (70 ns t_rr, 225 nC Q_rr) in high-current switching topologies.

Technical Context

This device employs ST's STripFET™ F3 process to achieve ultra-low R_DS(on) and optimized gate charge, enabling high-frequency synchronous rectification and PWM-driven load switching. Its 100% avalanche-tested construction ensures robustness under unclamped inductive switching stress.

The D²PAK package provides enhanced thermal dissipation (R_thj-case = 0.45 °C/W) and high-current capability (160 A continuous at T_C = 25 °C), with a source-drain diode rated for 160 A continuous and 640 A pulsed operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) max	2.0 mΩ - Ensures ≤3.2 W conduction loss at 80 A, critical for thermally constrained engine bay power stages.
I_D cont	160 A @ T_C = 25 °C - Supports high-current motor drivers and starter solenoid interfaces without forced cooling.
EAS	1 J - Validated avalanche energy enables reliable operation in flyback and boost converters without external snubbers.
t_rr	70 ns - Fast body diode recovery minimizes cross-conduction loss in synchronous buck and half-bridge configurations.
Q_g	110–150 nC - Gate drive energy requirement informs selection of gate driver ICs (e.g., STGAP2SICSN) for <100 ns switching transitions.
R_thj-case	0.45 °C/W - Enables 330 W total dissipation with modest heatsinking, suitable for compact under-hood modules.

Pinout & Package

The STP270N4F3 is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain tab provides low-inductance, high-current path and primary thermal interface to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to internal die drain; requires soldered thermal pad area ≥1 in² FR-4, 2 oz Cu for R_thj-pcb ≤35 °C/W.
Source (Pins 1 & 2)	Return path for load current and gate reference	Parallel pins reduce bond-wire inductance; must be routed with low-impedance ground plane to minimize switching noise coupling.
Gate (Pin 3)	Control terminal for channel modulation	Requires <10 Ω series gate resistor to damp ringing; sensitive to ESD (±20 V rating) and layout parasitics.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature range (−55 °C to +175 °C junction) and mechanical stress per JESD22 standards.
100% avalanche tested	Each unit subjected to unclamped inductive switching test per JEDEC JESD24-11, ensuring reliability in fault conditions.
Low Q_gd/Q_gs ratio	25 nC / 27 nC ≈ 0.93 - Reduces Miller plateau duration and improves immunity to dv/dt-induced turn-on during hard switching.
Optimized C_iss/C_oss ratio	7400 pF / 1800 pF ≈ 4.1 - Balances gate drive efficiency and voltage-dependent capacitance for stable ZVS/ZCS design.
Enhanced diode softness	Reverse recovery current I_RRM = 3.2 A - Limits voltage overshoot and EMI generation during commutation in bidirectional converters.

Applications

Automotive DC-DC Converters

Engine Control Unit (ECU) Load Switching

Use Scenario: High-current 12 V → 5 V/3.3 V buck converter supplying microcontroller, sensors, and CAN transceivers in modern ECUs.

IC Role / Device Role: Primary synchronous rectifier MOSFET operating at 200–500 kHz with forced-air or passive heatsinking.

Use Value: 1.6 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 3.5 mΩ devices, enabling higher efficiency (>94%) and smaller thermal solution.

Use Scenario: High-side switch controlling fuel injector, ignition coil, or radiator fan in engine management system.

IC Role / Device Role: Robust load switch with integrated avalanche protection, driven by low-side gate driver (e.g., L9369).

Use Value: 1 J EAS rating eliminates need for external TVS/clamp diodes during inductive kickback, reducing BOM count and PCB area.

On-Board Charger (OBC) Auxiliary Supplies

12 V Battery Backup Systems

Use Scenario: Isolated auxiliary supply in EV on-board chargers delivering 24 V/5 A to control logic and isolation gate drivers.

IC Role / Device Role: Primary-side switch in active-clamp forward or resonant LLC topology operating at 300–700 kHz.

Use Value: 70 ns t_rr and low Q_rr (225 nC) minimize dead-time losses and improve light-load efficiency over Si-based alternatives.

Use Scenario: Bidirectional 12 V backup power path in ADAS domain controllers, supporting seamless failover during main battery dropouts.

IC Role / Device Role: Low-loss, reverse-polarity protected switch enabling controlled charge/discharge between primary and backup batteries.

Use Value: Dual-source capability enabled by low R_DS(on) and symmetric SOA allows <10 mV dropout in both directions, meeting ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP270N4F3	Identical STripFET™ F3 process origin; same R_DS(on) (1.6 mΩ), Q_g (120 nC), and D²PAK package; minor variation in t_rr (75 ns vs. 70 ns).	Same AEC-Q101 qualification level and SOA curve; validated in identical automotive OEM designs.	Drop-in replacement with identical layout and thermal footprint; preferred where Infineon supply chain alignment is required.
ON Semiconductor NTMFS4C09N	Higher R_DS(on) (2.3 mΩ), lower Q_g (95 nC), and slightly reduced EAS (0.8 J); same D²PAK package and 40 V rating.	Limited to non-critical 12 V loads due to lower avalanche margin; not recommended for unclamped inductive switching.	Select when gate drive power is constrained and avalanche stress is absent; verify SOA derating for peak current pulses.

Compared with IPP270N4F3, STP270N4F3 offers marginally faster diode recovery for high-frequency converters; versus NTMFS4C09N, it delivers superior ruggedness and conduction efficiency at the cost of ~15% higher gate drive energy.

Availability

STP270N4F3 is available at Aetrix Electronics and suitable for automotive power conversion, engine control load switching, on-board charger auxiliary supplies, and 12 V battery backup systems requiring stable component supply across extended product lifecycles.

Supply support for STP270N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing and AEC-Q101 validation infrastructure.

The STripFET™ F3 product line targets high-current, high-reliability automotive power stages, emphasizing low R_DS(on), robust avalanche performance, and thermal efficiency in compact surface-mount packages.

FAQ

What is the maximum safe operating temperature for STP270N4F3?

The STP270N4F3 has a maximum operating junction temperature of 175 °C and a storage temperature range of −55 °C to +175 °C. Derating begins at T_C > 25 °C per the SOA curve in Figure 2; at T_C = 100 °C, continuous current remains 160 A but pulse current is limited by thermal saturation and SOA boundaries.

Does STP270N4F3 require a gate resistor, and what value is recommended?

Yes - a gate resistor is mandatory to control dv/dt and suppress oscillation. For 12 V gate drive and typical PCB layout, a 4.7 Ω series resistor is specified in the datasheet switching test circuit (Figure 13). Values between 3.3 Ω and 10 Ω balance switching speed, EMI, and gate driver stress.

Can STP270N4F3 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Figure 11) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared heatsink or copper pour; ST recommends ≤3 devices in parallel without active current balancing.

Is the D²PAK package lead-free and RoHS compliant?

Yes - the STP270N4F3 uses ST's ECOPACK®2-compliant D²PAK package, fully lead-free and RoHS compliant per Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 and supports standard reflow profiles including peak temperatures up to 260 °C.

STP270N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP270N4F3 FAQ

1.How can I place an order for STP270N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP270N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP270N4F3 reliable?

The price and inventory of STP270N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP270N4F3 is usually 5 days.

3.What payment methods are accepted for STP270N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP270N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP270N4F3?

STP270N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP270N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP270N4F3?

For technical support, including STP270N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP270N4F3 requirements.

6.How does Aetrix verify that STP270N4F3 is sourced from the original manufacturer or authorized distributors?

All STP270N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP270N4F3 meets industry standards.

7.What is the process for return or replacement of STP270N4F3?

All STP270N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STP270N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP270N4F3 part is unused and in its original packaging.

Return procedure for STP270N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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