STMicroelectronics STP270N8F7

Overview

STP270N8F7 from STMicroelectronics is an N-channel 80 V, 180 A Power MOSFET in TO-220 package, utilizing STripFET F7 trench gate technology to achieve 0.0025 Ω max R_DS(on) at V_GS = 10 V and T_C = 25 °C. It delivers high avalanche ruggedness (1.16 J single-pulse EAS), low Crss/Ciss ratio for EMI immunity, and supports high-efficiency DC-DC conversion in industrial motor drives.

For engineers reviewing the STP270N8F7 datasheet, STP270N8F7 pinout, STP270N8F7 application, or STP270N8F7 equivalent, key selection criteria include its 80 V V_DS, 180 A continuous drain current, 0.48 °C/W R_thJC, 193 nC total gate charge, and TO-220 thermal performance under high-current switching conditions.

Technical Context

This MOSFET employs STripFET F7's enhanced trench gate structure to reduce on-resistance while minimizing C_iss (13.6 nF) and C_rss (236 pF), enabling fast switching with low EMI generation. Its low Crss/Ciss ratio of ~1.7% improves noise immunity during high-dV/dt operation.

The device operates across –55 °C to 175 °C junction temperature range and sustains 720 A pulsed drain current (I_DM) with safe operating area (SOA) validated up to 100 µs pulse width at T_C = 25 °C and V_DS = 40 V.

Key Specifications

Pinout & Package

STP270N8F7 uses TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when drain is not at chassis ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with IXTH180N08S and IRFP260N, STP270N8F7 delivers superior power density (0.0025 Ω in TO-220), lower gate drive loss (193 nC), and optimized EMI behavior-making it the preferred choice for new 80 V high-current designs where thermal and layout constraints are tight.

Availability

STP270N8F7 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard charger stages requiring stable component supply and long-term production continuity.

Supply support for STP270N8F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP270N8F7 belongs to the STripFET F7 Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor control applications where low R_DS(on) and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current rating for STP270N8F7 at 100 °C case temperature?

The STP270N8F7 is rated for 180 A continuous drain current at both T_C = 25 °C and T_C = 100 °C, as confirmed in Table 1 of DS9394 Rev 5. This reflects its robust thermal design and low R_DS(on) stability over temperature, enabling sustained high-current operation without derating in forced-air or liquid-cooled systems.

Does STP270N8F7 have integrated gate protection diodes?

No, STP270N8F7 does not integrate gate protection diodes. Its absolute maximum V_GS rating is ±20 V, and external Zener clamping (e.g., 15 V TVS) is recommended in noisy environments. Gate-source leakage (I_GSS) is specified at 100 nA max at ±20 V, confirming absence of internal ESD structures beyond standard process-level protection.

Can STP270N8F7 be used in paralleled configurations?

Yes, STP270N8F7 supports paralleling due to its positive temperature coefficient of R_DS(on) (confirmed in Figure 16), which promotes current sharing. Designers must match gate drive impedance, minimize source inductance imbalance, and ensure identical thermal mounting to avoid hot-spotting-validated in ST application note AN4775 for multi-device layouts.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The body diode's typical reverse recovery charge is 182 nC, measured at I_SD = 180 A, dI/dt = 100 A/µs, V_DD = 64 V, and T_j = 150 °C (Table 6, DS9394 Rev 5). This low Q_rr value-combined with 78 ns t_rr-reduces switching loss and EMI in synchronous rectification and freewheeling applications.