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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP27N60M2-EP

Name: STP27N60M2-EP
Brand: STMicroelectronics
SKU: STP27N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP27N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP27N60M2-EP.pdf

Description:: MOSFET N-CH 600V 20A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,312

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Product details

Overview

STW27N60M2-EP from STMicroelectronics is an N-channel 600 V, 150 mΩ typ. (163 mΩ max.), 20 A Power MOSFET using MDmesh M2 Enhanced Performance technology in TO-247 package. It delivers extremely low gate charge (33 nC), optimized COSS profile (70 pF), and very low turn-off switching losses-enabling efficient operation in high-frequency resonant and hard-switched converters above 150 kHz, such as LLC and PFC stages.

For engineers reviewing the STW27N60M2-EP datasheet, STW27N60M2-EP pinout, STW27N60M2-EP application, or STW27N60M2-EP equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 100% avalanche-tested reliability, Zener-protected gate, and thermal resistance of 0.74 °C/W (junction-to-case) for high-power-density SMPS designs.

Technical Context

This MOSFET employs a strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance nonlinearity, enabling fast, low-loss switching with minimal voltage overshoot during hard commutation. Its Coss eq. of 146 pF (0–480 V) and low Crss (1 pF) support clean zero-voltage switching transitions in high-frequency topologies.

The device integrates a robust body diode with trr = 271 ns (TJ = 25 °C) and Qrr = 3.44 µC, rated for 20 A continuous source-drain current and 80 A pulsed, while maintaining 15 V/ns diode recovery dv/dt capability under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	600 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC bus with margin.
RDS(on) max.	163 mΩ at VGS = 10 V, ID = 10 A - Enables <1.6 W conduction loss at 20 A, critical for thermally constrained PFC stages.
Qg	33 nC - Reduces gate drive power and enables use of smaller, lower-cost gate drivers in >150 kHz designs.
Coss	70 pF at VDS = 100 V - Low stored energy (EOSS ≈ 2.5 µJ at 400 V) minimizes turn-on loss in ZVS circuits.
dv/dt ruggedness	50 V/ns - Ensures reliable operation without spurious turn-on in noisy high-dV/dt environments like motor drives.
TJ max.	150 °C - Allows full 20 A rating at TC = 25 °C and derated 13 A at TC = 100 °C for sustained industrial operation.
EAS	260 mJ - Withstands single-pulse inductive energy events without failure, supporting unclamped inductive load robustness.

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole mounting with standard footprint. Thermal path optimized via metal tab soldered to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; Zener-protected to ±25 V for ESD immunity.
2 (D, Tab)	Drain	Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current path and thermal conduction.
3 (S)	Source	Power return and reference node; used for current sensing and gate drive referencing in high-side configurations.

Key Features

Feature	Design Value
Extremely low gate charge	33 nC total gate charge reduces driver power dissipation and enables faster switching with lower EMI.
Optimized COSS profile	Coss = 70 pF (100 V) and Coss eq. = 146 pF (0–480 V) ensures predictable turn-on loss and stable ZVS behavior.
Very low turn-off switching losses	td(off) = 55.6 ns and tf = 6.3 ns minimize energy loss during high-frequency hard switching.
100% avalanche tested	Rated for 3.6 A repetitive avalanche current and 260 mJ single-pulse energy-guarantees ruggedness in overvoltage transients.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient stress, eliminating need for external clamping in most layouts.

Applications

Server PSU Primary Switch

Industrial PFC Stage

Use Scenario: High-efficiency 3.3 kW server power supply operating at 200–300 kHz with interleaved totem-pole PFC.

IC Role / Device Role / Timing Role: Main switching device in active clamp or dual-phase totem-pole configuration; handles 20 A RMS input current at 400 V DC bus.

Use Value: Low Qg and Coss enable >98.5% efficiency at full load; 0.74 °C/W RthJC supports compact heatsinking without forced air.

Use Scenario: 1.5 kW industrial AC-DC front-end with wide input range (85–265 VAC) and high line regulation.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC; operates at 150–250 kHz with 13 A peak current.

Use Value: Avalanche-rated design tolerates mains surges; 50 V/ns dv/dt ruggedness prevents false triggering during line dips and transients.

EV Onboard Charger (OBC) DC-DC

High-Frequency Induction Heater

Use Scenario: 6.6 kW bidirectional OBC DC-DC stage using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side bridge switch; switches at 250 kHz with soft-commutation.

Use Value: Low trr (271 ns) and Qrr (3.44 µC) minimize body-diode conduction loss during dead-time; Zener gate ensures reliability across automotive temperature range.

Use Scenario: 5 kW resonant inverter driving induction coils at 200–500 kHz for precision metal heating.

IC Role / Device Role / Timing Role: Half-bridge switching element; subjected to high di/dt (>200 A/µs) and repetitive unclamped inductive stress.

Use Value: 100% avalanche testing and 260 mJ EAS rating ensure survival under coil detuning or load mismatch events without snubber redesign.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW34N60M2	600 V, 125 mΩ max., 27 A ID - lower RDS(on) but higher Qg (42 nC) and Coss (95 pF).	Better conduction loss at high current; less suitable for >200 kHz due to higher switching loss.	Select when thermal headroom is limited and switching frequency ≤150 kHz.
IPW60R099P7	600 V, 99 mΩ max., 34 A ID - Infineon CoolMOS™ P7; lower RDS(on) but no integrated Zener gate protection.	Higher peak current capability; requires external gate clamping and careful PCB layout for ESD robustness.	Select when maximum efficiency at 100–150 kHz is prioritized and gate drive design includes discrete protection.

Compared with STW34N60M2 and IPW60R099P7, the STW27N60M2-EP offers the best balance of low Qg, proven avalanche ruggedness, and integrated gate protection-making it optimal for compact, high-reliability >150 kHz converters where layout simplicity and transient immunity are critical.

Availability

STW27N60M2-EP is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and EV onboard charger DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW27N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh M2 EP series targets high-efficiency, high-frequency power conversion-specifically engineered for resonant topologies, totem-pole PFC, and compact SMPS where low switching loss and ruggedness outweigh raw conduction performance.

FAQ

Is STW27N60M2-EP pin-compatible with earlier STP27N60M2?

No. STW27N60M2-EP replaces STP27N60M2 and is not pin-compatible-the STP variant was discontinued per DS11415 Rev 2 (April 2026), and STW27N60M2-EP features updated internal structure, tighter RDS(on) distribution, and enhanced avalanche testing. Board redesign is required for migration.

What is the maximum recommended gate resistor for 200 kHz operation?

A gate resistor of 4.7 Ω is validated per datasheet Figure 18 for 200 kHz switching with VDD = 300 V and ID = 10 A. Lower values (≤2.2 Ω) may be used with active gate drivers to reduce td(off) further, but require careful layout to avoid ringing due to low Crss (1 pF) and high dv/dt sensitivity.

Does the body diode support synchronous rectification in LLC converters?

Yes-the body diode has trr = 271 ns (TJ = 25 °C) and Qrr = 3.44 µC, enabling use in quasi-resonant LLC secondary-side rectification at up to 300 kHz. However, for optimal efficiency above 250 kHz, external SiC Schottky catch diodes are recommended to eliminate reverse recovery loss entirely.

Can STW27N60M2-EP operate reliably at TJ = 150 °C continuously?

Yes-its absolute maximum junction temperature is 150 °C, and SOA curves (Figure 1) confirm safe operation at 13 A continuous current with TC = 100 °C. Sustained 150 °C operation requires thermal design ensuring RthJC ≤ 0.74 °C/W and adequate heatsink interface resistance.

STP27N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 163mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP27N60M2-EP FAQ

1.How can I place an order for STP27N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP27N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP27N60M2-EP reliable?

The price and inventory of STP27N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP27N60M2-EP is usually 5 days.

3.What payment methods are accepted for STP27N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP27N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP27N60M2-EP?

STP27N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP27N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP27N60M2-EP?

For technical support, including STP27N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP27N60M2-EP requirements.

6.How does Aetrix verify that STP27N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STP27N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP27N60M2-EP meets industry standards.

7.What is the process for return or replacement of STP27N60M2-EP?

All STP27N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STP27N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP27N60M2-EP part is unused and in its original packaging.

Return procedure for STP27N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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