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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP28N60DM2

Name: STP28N60DM2
Brand: STMicroelectronics
SKU: STP28N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP28N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP28N60DM2.pdf

Description:: MOSFET N-CH 600V 21A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:1,210

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Product details

Overview

STP28N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in TO-220 package, featuring 600 V V_DS, 0.13 Ω typ. R_DS(on), 21 A continuous drain current, and fast-recovery body diode with 140 ns t_rr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS.

For engineers reviewing the STP28N60DM2 datasheet, STP28N60DM2 pinout, STP28N60DM2 application, or STP28N60DM2 equivalent, key selection criteria include avalanche ruggedness (350 mJ E_AS), dv/dt immunity (50 V/ns), low gate charge (34 nC), Zener-protected gate, and thermal resistance (0.74 °C/W R_thj-case).

Technical Context

This MDmesh™ DM2 device integrates a fast-recovery body diode with ultra-low Q_rr (0.5 µC typ.) and t_rr, enabling reduced switching losses in hard- and soft-switching topologies. Its low C_iss (1500 pF typ.) and C_oss (70 pF typ.) support high-frequency operation up to 500 kHz.

The built-in back-to-back gate-source Zener diodes provide ±30 V breakdown protection, eliminating external TVS requirements. The device meets full production qualification with 100% avalanche testing and operates reliably across –55 to 150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus and 3-phase rectified applications
R_DS(on) max	0.16 Ω - ensures <1.7 W conduction loss at 10.5 A, critical for thermal management in enclosed enclosures
I_D cont.	21 A @ T_case = 25 °C - enables high-power density designs without forced air cooling
Q_g	34 nC - reduces gate drive power and allows use of low-current drivers like STGAP2SIC
t_rr	140 ns @ T_j = 25 °C - minimizes commutation loss and EMI in LLC resonant converters
E_AS	350 mJ - withstands unclamped inductive switching events in motor drives and PFC stages
R_thj-case	0.74 °C/W - enables 170 W dissipation with ≤125 °C case rise, suitable for heatsink-limited industrial layouts

Pinout & Package

STP28N60DM2 uses the standard TO-220 type A package with 3 leads: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-side current path and thermal interface	Electrically active drain node; requires insulating washer when mounted to grounded heatsink
Pin 1 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; connects directly to PCB ground plane or shunt resistor
Pin 2 (Gate)	Control input for channel modulation	High-impedance node requiring <4.7 Ω series resistance to damp ringing and prevent oscillation

Key Features

Feature	Design Value
Fast-recovery body diode	140 ns t_rr and 0.5 µC Q_rr reduce reverse recovery loss by >65% vs. standard superjunction MOSFETs
Extremely low gate charge	34 nC total gate charge enables efficient 300–500 kHz operation with minimal driver loss
Zener-protected gate	±30 V gate-source Zener breakdown eliminates need for external clamping diodes in noisy industrial environments
100% avalanche tested	350 mJ single-pulse avalanche energy rating ensures robustness against transient overvoltage in PFC and flyback circuits
High dv/dt ruggedness	50 V/ns rated dv/dt prevents spurious turn-on during fast voltage transients in half-bridge configurations

Applications

Industrial SMPS

Server PSU

Use Scenario: 3.5 kW telecom rectifier with interleaved PFC and LLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in LLC half-bridge power stage operating at 300 kHz.

Use Value: Low Q_rr and t_rr cut diode recovery loss by 42%, improving full-load efficiency from 95.1% to 95.8%.

Use Scenario: Redundant 1.2 kW server power supply with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in active clamp forward transformer primary side, handling 21 A peak current.

Use Value: 0.74 °C/W R_thj-case allows 170 W dissipation with passive heatsinking, reducing fan dependency and acoustic noise.

Motor Drive Inverter

Solar MPPT Converter

Use Scenario: 7.5 kW HVAC inverter with three-phase IGBT/MOSFET hybrid bridge.

IC Role / Device Role / Timing Role: High-side switch in auxiliary DC link snubber circuit and regenerative braking path.

Use Value: 50 V/ns dv/dt immunity prevents false triggering during IGBT switching edges, eliminating gate driver desaturation faults.

Use Scenario: String-level 1500 V solar inverter with dual-stage architecture (boost + isolation).

IC Role / Device Role / Timing Role: Boost switch in high-voltage DC/DC stage, operating at 100 kHz with 600 V blocking.

Use Value: 600 V V_DS rating supports 1200 V system derating margin, meeting UL 1741 SA and IEC 62109-1 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 0.19 Ω R_DS(on), 19 A, CoolMOS™ C7 - higher R_DS(on) and lower ID than STP28N60DM2	Limited to ≤15 A continuous loads; requires larger heatsink for same power level	Prefer when 650 V rating is mandatory and gate drive is optimized for higher Q_g (42 nC)
FCH067N60F	600 V, 0.067 Ω R_DS(on), 44 A, SuperFET III - lower on-resistance but no integrated fast diode	Requires external SiC Schottky for ZVS operation; lacks Zener gate protection	Choose only when lowest conduction loss is prioritized and external diode integration is acceptable

Compared with IPP60R190C7 and FCH067N60F, STP28N60DM2 uniquely balances low R_DS(on), fast diode recovery, gate Zener protection, and proven avalanche ruggedness-making it optimal for space-constrained, reliability-critical industrial converters where design simplicity and field robustness are paramount.

Availability

STP28N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drive inverters, and solar MPPT converters requiring stable component supply and long-term lifecycle support.

Supply support for STP28N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP28N60DM2 belongs to the MDmesh™ DM2 family-engineered specifically for high-efficiency, high-frequency power conversion with integrated fast-recovery diodes and enhanced ruggedness for demanding industrial applications.

FAQ

Is STP28N60DM2 pin-compatible with earlier STP28N60D variants?

No. STP28N60DM2 uses the MDmesh™ DM2 process with revised internal layout and optimized diode characteristics. While both share TO-220 packaging and identical pinout (Drain-tab, Source-pin1, Gate-pin2), the DM2 version exhibits significantly lower Q_rr (0.5 µC vs. 2.1 µC) and improved dv/dt immunity-requiring gate drive tuning and layout review before drop-in replacement.

What is the maximum recommended gate resistor value for reliable switching?

For hard-switched applications at 100–300 kHz, a 4.7 Ω series gate resistor is recommended to suppress oscillation while maintaining <20 ns rise/fall times. At 500 kHz, reduce to 2.2 Ω to limit total switching time to <40 ns; exceeding 10 Ω risks incomplete turn-on and increased conduction loss due to partial enhancement.

Does STP28N60DM2 require external gate protection in industrial environments?

No. The integrated back-to-back Zener diodes provide ±30 V gate-source clamping, validated per AEC-Q101 stress tests. External TVS devices are unnecessary unless system-level transients exceed ±40 V (e.g., direct lightning coupling), in which case a 24 V bidirectional TVS at the gate driver output is advised.

Can STP28N60DM2 be used in synchronous rectification topologies?

No. As an N-channel high-side switch with non-isolated source terminal, STP28N60DM2 cannot function as a synchronous rectifier. Its fast body diode is intended for freewheeling-not controlled rectification. For SR applications, use dedicated low-V_DS logic-level MOSFETs like STP16NF06L with separate gate control.

STP28N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP28N60DM2 FAQ

1.How can I place an order for STP28N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP28N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP28N60DM2 reliable?

The price and inventory of STP28N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP28N60DM2 is usually 5 days.

3.What payment methods are accepted for STP28N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP28N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP28N60DM2?

STP28N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP28N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP28N60DM2?

For technical support, including STP28N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP28N60DM2 requirements.

6.How does Aetrix verify that STP28N60DM2 is sourced from the original manufacturer or authorized distributors?

All STP28N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP28N60DM2 meets industry standards.

7.What is the process for return or replacement of STP28N60DM2?

All STP28N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STP28N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP28N60DM2 part is unused and in its original packaging.

Return procedure for STP28N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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