STMicroelectronics STP28N60M2

Overview

STP28N60M2 from STMicroelectronics is an N-channel 600 V, 135 mΩ typ. (150 mΩ max), 22 A Power MOSFET in TO-220 package, built on MDmesh M2 technology. It delivers low gate charge (36 nC), optimized Coss profile (70 pF), and 100% avalanche-tested ruggedness for high-efficiency AC-DC and DC-DC converters operating at 65–100 kHz.

For engineers reviewing the STP28N60M2 datasheet, STP28N60M2 pinout, STP28N60M2 application, or STP28N60M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (RthJC = 0.74 °C/W) in TO-220 mounting configurations.

Technical Context

This device uses ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its Zener-protected gate enables robust ESD tolerance (±25 V VGS rating), while its 350 mJ single-pulse avalanche energy supports reliable operation under transient overvoltage conditions.

The MOSFET exhibits a well-controlled reverse recovery profile (Qrr = 4.7 µC, trr = 350 ns at TJ = 25 °C) and low Crss (2 pF), minimizing Miller-induced turn-off delay. Its 15 V/ns diode recovery dv/dt rating ensures stable commutation in hard-switched PFC and resonant LLC topologies.

Key Specifications

Pinout & Package

STP28N60M2 is housed in a TO-220 package with standard 3-pin configuration: Drain (Tab), Gate (Pin 1), Source (Pin 2). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless system-level grounding permits direct connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW28N60M2, STP28N60M2 offers identical electrical specs in a lower-cost, smaller TO-220 form factor ideal for space-constrained 300–400 W systems; versus IPP60R190C7, it trades higher Qg for guaranteed avalanche ruggedness and integrated gate protection-critical for industrial reliability.

Availability

STP28N60M2 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP28N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP28N60M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies and motor control inverters demanding ruggedness, low loss, and consistent parametric stability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP28N60M2 supports 14 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9931 Rev 5. This derating reflects thermal limits of the TO-220 package and ensures safe operation within the SOA boundary shown in Figure 1, even under sustained high ambient conditions.

Does STP28N60M2 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, enabling ±25 V VGS absolute maximum rating. This eliminates the need for external gate clamping components in most industrial applications, reducing BOM count and improving layout robustness against ESD and transient coupling.

Can STP28N60M2 replace older STP28N60 in existing designs?

Yes, with qualification: STP28N60M2 offers lower RDS(on) (135 mΩ vs. 180 mΩ typ.), reduced Qg (36 nC vs. 52 nC), and improved dv/dt ruggedness (50 V/ns vs. 35 V/ns). Layout changes are not required, but gate drive strength and snubber tuning should be verified due to faster switching edges.

What is the typical reverse recovery charge of the body diode?

The typical reverse recovery charge (Qrr) is 4.7 µC at TJ = 25 °C, ISD = 22 A, di/dt = 100 A/µs, and VDD = 60 V (Table 7). At elevated temperature (TJ = 150 °C), Qrr rises to 6.5 µC - a critical parameter for calculating commutation loss in synchronous rectification and bidirectional topologies.