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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP28N65M2

Name: STP28N65M2
Brand: STMicroelectronics
SKU: STP28N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP28N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP28N65M2.pdf

Description:: MOSFET N-CH 650V 20A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP28N65M2 from STMicroelectronics is an N-channel 650 V, 150 mΩ typ. (180 mΩ max), 20 A Power MOSFET using MDmesh M2 technology in TO-220 package. It delivers low gate charge (35 nC), optimized Coss profile (60 pF), and 100% avalanche tested ruggedness for high-efficiency hard-switched PFC and SMPS primary-side switching in industrial power supplies.

For engineers reviewing the STP28N65M2 datasheet, STP28N65M2 pinout, STP28N65M2 application, or STP28N65M2 equivalent, key selection criteria include RDS(on) at 10 V drive, dv/dt ruggedness (50 V/ns), SOA limits at TC = 100 °C, and Zener-protected gate reliability under transient stress.

Technical Context

This device employs a strip-layout MDmesh M2 vertical structure to minimize conduction loss while maintaining fast switching via low Crss (2 pF) and controlled Qgd/Qgs ratio (15 nC / 6 nC). Its 150 mΩ typical RDS(on) is specified at VGS = 10 V and ID = 10 A, with thermal resistance RthJC = 0.74 °C/W enabling high-power operation in TO-220.

The integrated Zener-protected gate withstands ±25 V VGS transients, and its 760 mJ single-pulse avalanche energy (EAS) supports unclamped inductive switching in flyback and resonant topologies. Diode recovery parameters-trr = 384 ns, Qrr = 5.7 µC at TJ = 25 °C-are characterized for synchronous rectification compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	650 V - Supports 400 VAC input designs with 20% margin for line surges in offline SMPS.
RDS(on) max	180 mΩ - Limits conduction loss to ≤3.6 W at 10 A DC, critical for thermal design in enclosed enclosures.
ID cont @ TC=100°C	13 A - Defines usable current derating for continuous operation on heatsink-limited PCB layouts.
Qg	35 nC - Determines gate driver power requirement (~3.5 mW per MHz at 10 V swing) for 100 kHz+ operation.
Coss	60 pF - Sets output capacitance energy (Eoss ≈ 10 µJ at 520 V), directly impacting ZVS transition efficiency.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in half-bridge configurations without spurious turn-on.
EAS	760 mJ - Enables robustness against single-event inductive spikes up to 2.4 A avalanche current without failure.

Pinout & Package

STP28N65M2 uses the TO-220 package (Type A), with metal tab electrically connected to the drain. The case is isolated from heatsink by default unless insulated mounting hardware is used.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control terminal requiring <4.9 Ω series gate resistor to damp ringing and limit peak current.
2 (Middle)	Drain (D)	Main high-voltage power path; electrically tied to metal tab-requires insulation when mounted to grounded heatsink.
3 (Right)	Source (S)	Power return reference; connects to low-side switch node and provides gate drive return path for bootstrap circuits.

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces RDS(on) × area product by 25% vs. prior-generation 650 V MOSFETs, enabling smaller heatsinks in 300–500 W designs.
Zener-protected gate	Withstands ±25 V gate-source transients without external clamping, simplifying gate driver design in noisy industrial environments.
Optimized Coss profile	60 pF Coss with 307 pF Coss_eq enables predictable soft-switching behavior in LLC and active clamp forward converters.
100% avalanche tested	Guarantees minimum 2.4 A repetitive avalanche current and 760 mJ single-pulse EAS-critical for flyback snubberless operation.
Low Qgd/Qgs ratio	15 nC/6 nC ratio improves Miller immunity and reduces risk of false turn-on during high dv/dt commutation events.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 400–500 W active clamp forward converter operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 650 V DC bus with ZVS-assisted turn-on and controlled diode recovery.

Use Value: 150 mΩ RDS(on) and 35 nC Qg enable >94% full-load efficiency while maintaining <85 °C junction temperature under forced air cooling.

Use Scenario: PFC boost switch in 1 kW telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch managing 20 A peak currents and 50 V/ns dv/dt stress during zero-crossing transitions.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on; 760 mJ EAS absorbs inductive kickback during CRM discontinuous intervals.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Upper-leg IGBT replacement in 3-phase 7.5 kW HVAC inverter with 1200 V DC link clamping.

IC Role / Device Role / Timing Role: Hard-switched high-side switch in 6–12 kHz PWM inverters, leveraging low Coss for reduced switching loss.

Use Value: 60 pF Coss minimizes capacitive turn-off loss; 13 A ID@TC=100°C supports sustained 5.5 kW output with standard heatsink sizing.

Use Scenario: DC-DC isolation stage in 3 kW solar microinverter interfacing 600 V PV string to 400 V battery bank.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology requiring precise timing control and avalanche tolerance.

Use Value: 100% avalanche testing ensures reliability during grid fault conditions; 0.74 °C/W RthJC enables compact thermal design in sealed outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N65M2	Same die, TO-247 package with lower RthJC (0.74 °C/W vs. TO-220's 0.74 °C/W but higher power dissipation capability due to larger case).	Preferred for >600 W designs requiring higher PTOT (30 W vs. TO-220's 170 W) and improved thermal margin.	Select when board space allows TO-247 and thermal budget exceeds 170 W at TC = 25 °C.
IPP65R190C7	650 V, 190 mΩ, 21 A CoolMOS™ C7; higher RDS(on) but lower Qg (24 nC) and superior Coss linearity.	Better suited for high-frequency (>300 kHz) resonant converters where Qg dominates losses over RDS(on).	Choose for ZVS/ZCS topologies prioritizing gate drive efficiency over conduction loss at 100–200 kHz.

Compared with STW28N65M2, STP28N65M2 offers identical electrical specs in a cost-optimized TO-220 footprint ideal for mid-power industrial SMPS; versus IPP65R190C7, it trades slightly higher RDS(on) for proven avalanche ruggedness and tighter VGS(th) distribution (2–4 V vs. 2.5–4.5 V), simplifying gate drive design in variable-line applications.

Availability

STP28N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STP28N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STP28N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial offline power conversion systems up to 1 kW.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP28N65M2 supports 13 A continuous drain current when the case temperature is maintained at 100 °C, as defined in Table 1 of DS10760. This rating accounts for thermal derating due to junction-to-case resistance (0.74 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under steady-state conditions.

Does STP28N65M2 have an integrated body diode, and what are its key recovery characteristics?

Yes, STP28N65M2 includes a monolithic source-drain body diode rated for 20 A continuous and 80 A pulsed current. At TJ = 25 °C, its reverse recovery time is 384 ns with 5.7 µC recovered charge and 30 A peak reverse current under standard test conditions (ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V), making it suitable for hard-switched and quasi-resonant topologies.

Can STP28N65M2 be used in avalanche-mode operation, and what is its guaranteed energy rating?

Yes, STP28N65M2 is 100% avalanche tested and guarantees a minimum single-pulse avalanche energy (EAS) of 760 mJ when starting from TJ = 25 °C, with ID = 2.4 A and VDD = 50 V. This rating is validated per JEDEC JESD24-1 and supports reliable operation in unclamped inductive switching scenarios such as flyback snubberless designs.

What is the gate threshold voltage range, and how does it vary with temperature?

The gate threshold voltage (VGS(th)) is specified from 2 V to 4 V at TC = 25 °C, with a typical value of 3 V. As shown in Figure 13 of DS10760, VGS(th) decreases with rising temperature-normalized to ~0.7× at TJ = 125 °C-ensuring stable turn-on behavior across the full -55 °C to 150 °C operating junction range without unintended conduction drift.

STP28N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP28N65M2 FAQ

1.How can I place an order for STP28N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP28N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP28N65M2 reliable?

The price and inventory of STP28N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP28N65M2 is usually 5 days.

3.What payment methods are accepted for STP28N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP28N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP28N65M2?

STP28N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP28N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP28N65M2?

For technical support, including STP28N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP28N65M2 requirements.

6.How does Aetrix verify that STP28N65M2 is sourced from the original manufacturer or authorized distributors?

All STP28N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP28N65M2 meets industry standards.

7.What is the process for return or replacement of STP28N65M2?

All STP28N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP28N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP28N65M2 part is unused and in its original packaging.

Return procedure for STP28N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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