STMicroelectronics STP28NM50N

Overview

STP28NM50N from STMicroelectronics is an N-channel 500 V, 135 mΩ typ. (158 mΩ max), 21 A MDmesh II Power MOSFET in TO-220 package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (50 nC), and low input capacitance (1735 pF), enabling fast switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP28NM50N datasheet, STP28NM50N pinout, STP28NM50N application, or STP28NM50N equivalent, key selection criteria include its 500 V V_DS, 135 mΩ R_DS(on) at 10 V_GS, 50 nC total gate charge, 150 W power dissipation at T_C = 25 °C, and 15 V/ns dv/dt capability - all critical for hard-switched high-voltage topologies.

Technical Context

This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 135 mΩ typical R_DS(on) and 50 nC Q_g are co-optimized for high-frequency operation up to 100 kHz in continuous conduction mode (CCM) PFC and LLC resonant converters.

The integrated body diode exhibits 326 ns reverse recovery time (T_J = 25 °C) and 5 µC Q_rr, supporting moderate-speed synchronous rectification and snubberless flyback designs. Thermal resistance R_thJC is 0.83 °C/W, enabling direct mounting to heatsinks without thermal interface limitations in 21 A continuous current applications.

Key Specifications

Pinout & Package

STP28NM50N is housed in a TO-220 package with isolated tab (non-conductive mounting option). The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP28NM50N, STW28NM50N offers identical electrical specs with superior thermal handling in TO-247, while IPP60R190C7 trades avalanche ruggedness for lower gate charge in 650 V applications - making STP28NM50N optimal for cost-sensitive 500 V industrial SMPS needing proven robustness.

Availability

STP28NM50N is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV charger auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for STP28NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP28NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies and motor control inverters demanding low R_DS(on) × Q_g and guaranteed avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP28NM50N supports 13 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS6813 Rev 3. This derating reflects thermal limits of the TO-220 package and ensures junction temperature remains below 150 °C under sustained load conditions with appropriate heatsinking.

Is the TO-220 tab electrically isolated from the leads?

No - the metal tab of the STP28NM50N in TO-220 package is internally connected to the drain terminal (Pin 2), as confirmed by the pinout diagram in Figure AM01475v1_noZen. Electrical isolation requires use of insulating shoulder washers and mica or ceramic pads when mounting to grounded heatsinks.

Does STP28NM50N have a specified reverse recovery time for its body diode?

Yes - the source-drain diode has a typical reverse recovery time (t_rr) of 326 ns at T_J = 25 °C, ISD = 21 A, di/dt = 100 A/µs, and VDD = 400 V, per Table 7 in DS6813 Rev 3. At 150 °C junction temperature, t_rr increases to 376 ns, confirming temperature-dependent soft recovery behavior.

Can STP28NM50N replace STP20NM50 in existing designs?

Yes - STP28NM50N offers lower R_DS(on) (135 mΩ vs. 195 mΩ typ.), higher ID (21 A vs. 17 A), and improved Q_g (50 nC vs. 62 nC), enabling direct drop-in replacement in TO-220 footprints. However, layout review is required to verify gate drive strength sufficiency and thermal margin due to increased power density.