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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP28NM60ND

Name: STP28NM60ND
Brand: STMicroelectronics
SKU: STP28NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP28NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP28NM60ND.pdf

Description:: MOSFET N-CH 600V 23A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP28NM60ND from STMicroelectronics is an N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFET in TO-220 package, designed for high-voltage switching in bridge topologies and ZVS phase-shift converters. It features intrinsic fast-recovery body diode, 100% avalanche tested operation, low gate charge (62.5 nC), and high dv/dt capability (45 V/ns) at 480 V.

For engineers reviewing the STP28NM60ND datasheet, STP28NM60ND pinout, STP28NM60ND application, or STP28NM60ND equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching robustness (E_AS = 450 mJ), source-drain diode recovery performance (Q_rr = 1160 nC at T_J = 25 °C), and thermal resistance (R_thj-case = 0.66 °C/W).

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip layout to achieve ultra-low on-resistance while maintaining high voltage blocking. Its internal structure enables stable operation under hard-switching conditions with peak di/dt up to 600 A/μs and repetitive avalanche current of 5 A.

The device integrates a fast-recovery body diode optimized for synchronous rectification and resonant topologies. Gate threshold voltage (3–5 V) and low input capacitance (C_iss = 2090 pF) support clean turn-on/turn-off control with standard gate drivers, while R_g = 4.7 Ω ensures predictable switching timing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus applications with 20% margin
R_DS(on) typ.	0.13 Ω @ V_GS = 10 V, I_D = 11.5 A - enables <1.7 W conduction loss at 23 A continuous
I_D cont. @ T_C = 25 °C	23 A - rated for high-current power stages without forced air cooling
E_AS	450 mJ - withstands single-pulse inductive energy without failure in flyback or LLC designs
Q_g	62.5 nC - determines gate drive power requirement and switching speed trade-off
trr / Q_rr	170 ns / 1160 nC - defines diode reverse recovery burden on complementary switch and EMI generation
R_thj-case	0.66 °C/W - allows >200 W dissipation with 132 °C case-to-junction rise at 200 W

Pinout & Package

STP28NM60ND is housed in a TO-220 package with isolated tab (pin 2). The metal tab is electrically connected to the drain terminal and serves as the primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance connection to system ground or low-side reference; carries full load current
2 (Drain / Tab)	Main high-voltage power terminal	Tab is drain-connected and thermally critical-requires insulating washer if heatsink is grounded
3 (Gate)	Control input for channel conduction	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and ringing above ±25 V

Key Features

Feature	Design Value
Intrinsic fast-recovery body diode	trr = 170 ns, Qrr = 1160 nC - eliminates need for external anti-parallel diode in half-bridge synchronous rectifiers
100% avalanche tested	IAS = 5 A, EAS = 450 mJ - guarantees ruggedness against inductive switching transients without derating
Low gate charge	Qg = 62.5 nC - reduces driver power loss and enables >100 kHz operation with standard 1-A gate drivers
High dv/dt immunity	45 V/ns @ VDD = 480 V - prevents false turn-on during high-slew-rate commutation in multi-kW inverters
FDmesh™ II silicon process	RDS(on) × Area reduction vs. first-gen MDmesh - delivers 0.13 Ω in TO-220, enabling compact 2–3 kW SMPS designs

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 750 W BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 23 A peak phase current at 20 kHz PWM.

Use Value: Low R_DS(on) minimizes I²R losses across thermal cycles; avalanche rating absorbs back-EMF spikes during abrupt load disconnection.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1.5 kW telecom rectifier.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with ZVS, conducting 23 A RMS current.

Use Value: Fast body diode (trr = 170 ns) enables efficient synchronous rectification; low C_oss (90 pF) reduces capacitive turn-on loss in resonant transitions.

Solar Microinverter H-Bridge

Induction Heating Half-Bridge

Use Scenario: Full-bridge DC–AC stage converting 400 V PV input to 230 V AC output in 300–500 W microinverter.

IC Role / Device Role / Timing Role: High-voltage switching transistor in hard-switched or quasi-resonant topology with bidirectional current flow.

Use Value: 600 V rating provides margin over 400 V bus; 100% avalanche test ensures reliability during grid fault events and islanding detection transients.

Use Scenario: 20–50 kHz half-bridge in 2.5 kW induction cooktop power stage driving series-resonant tank.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switching device subjected to repetitive unclamped inductive stress.

Use Value: 45 V/ns dv/dt capability prevents spurious turn-on during rapid V_DS collapse; 0.66 °C/W R_thj-case sustains 150 °C junction temperature under continuous 23 A conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C6	R_DS(on) = 0.19 Ω, TO-220, CoolMOS™ C6 - higher on-resistance, lower Q_g (43 nC)	Better efficiency at light loads due to lower C_oss; less suited for high-current continuous operation	Select when optimizing for partial-load efficiency and reduced EMI, not peak current handling
IRFP460	R_DS(on) = 0.27 Ω, TO-247, legacy planar - higher conduction loss, no fast body diode	Requires external anti-parallel diode; limited to <50 kHz due to slow trr (~300 ns)	Only for cost-sensitive legacy replacements where 0.13 Ω and fast diode are not required

Compared with IPP60R190C6 and IRFP460, STP28NM60ND delivers superior conduction efficiency at full load (0.13 Ω vs. 0.19/0.27 Ω), integrated fast diode functionality, and proven avalanche ruggedness-making it optimal for high-reliability, high-current industrial switching where thermal margin and transient immunity are critical.

Availability

STP28NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STP28NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering innovative silicon solutions for automotive, industrial, and power applications since 1987.

STP28NM60ND belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability high-voltage switching in industrial power conversion-emphasizing low R_DS(on), fast body diode recovery, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for STP28NM60ND at 100 °C case temperature?

The maximum continuous drain current is 14.5 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to junction-to-case thermal resistance (0.66 °C/W) and maximum junction temperature limit of 150 °C. Operation above this current requires active cooling or pulse-width limitation to maintain safe junction temperature.

Does STP28NM60ND require an external freewheeling diode in half-bridge configurations?

No. STP28NM60ND integrates an intrinsic fast-recovery body diode with t_rr = 170 ns and Q_rr = 1160 nC, validated for use in synchronous rectification and bidirectional current paths. External diodes are unnecessary unless specific reverse recovery softness or lower Q_rr is required beyond the device's specified performance.

How is avalanche ruggedness verified for STP28NM60ND?

Every unit undergoes 100% production avalanche testing per Table 4: I_AR = 5 A (repetitive or non-repetitive), E_AS = 450 mJ (single-pulse, starting at T_J = 25 °C). Testing follows unclamped inductive load conditions (Figure 21) with controlled V_DD, I_D, and L, ensuring guaranteed energy-handling capability without parameter shift or parametric failure.

Can STP28NM60ND be used in surface-mount designs?

No. STP28NM60ND is packaged exclusively in through-hole TO-220 (non-isolated tab), intended for bolt-down heatsinking. For surface-mount alternatives, ST offers STB28NM60ND in D²PAK (TO-263), which shares identical electrical specs but uses a thermally enhanced SMD footprint compatible with reflow assembly.

STP28NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2090 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP28NM60ND FAQ

1.How can I place an order for STP28NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STP28NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP28NM60ND reliable?

The price and inventory of STP28NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP28NM60ND is usually 5 days.

3.What payment methods are accepted for STP28NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP28NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP28NM60ND?

STP28NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP28NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP28NM60ND?

For technical support, including STP28NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP28NM60ND requirements.

6.How does Aetrix verify that STP28NM60ND is sourced from the original manufacturer or authorized distributors?

All STP28NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP28NM60ND meets industry standards.

7.What is the process for return or replacement of STP28NM60ND?

All STP28NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STP28NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP28NM60ND part is unused and in its original packaging.

Return procedure for STP28NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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