STMicroelectronics STP2N105K5

Overview

STP2N105K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, rated for 1050 V V_DS, 6 Ω typical R_DS(on), and 1.5 A continuous drain current at 25 °C. It features ultra-low gate charge (10 nC), Zener-protected gate, and 100% avalanche tested for ruggedness in high-reliability switching applications such as AC-DC front-end PFC stages.

For engineers reviewing the STP2N105K5 datasheet, STP2N105K5 pinout, STP2N105K5 application, or STP2N105K5 equivalent, key selection criteria include its 1050 V breakdown voltage, 2.08 °C/W junction-to-case thermal resistance, 90 mJ single-pulse avalanche energy, and DPAK (TO-252) package compatibility with FR-4 PCB thermal management.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 115 pF input capacitance, 0.5 pF reverse transfer capacitance, and 14.5 ns turn-on delay support high-frequency hard-switching up to several hundred kHz in resonant and quasi-resonant topologies.

The integrated Zener-protected gate withstands ±30 V transient stress, while its 4.5 V/ns diode recovery dv/dt rating and 50 V/ns MOSFET dv/dt ruggedness ensure robust operation during fast inductive turn-off events in offline SMPS and industrial motor drives.

Key Specifications

Pinout & Package

STP2N105K5 is housed in a DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The package meets ECOPACK environmental compliance standards and is optimized for automated assembly on FR-4 PCBs with 2-oz copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with IXTP1R2N100D, STP2N105K5 trades higher R_DS(on) for significantly lower Q_g and surface-mount DPAK packaging-enabling higher frequency operation and reduced gate driver cost in space-constrained industrial power supplies.

Availability

STP2N105K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage PFC circuits, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP2N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

STP2N105K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum safe operating temperature for STP2N105K5?

The STP2N105K5 has an operating junction temperature range of –55 °C to 150 °C. Its absolute maximum T_J is 150 °C; sustained operation above this threshold risks permanent parametric shift or failure. Thermal design must maintain T_J ≤ 150 °C under worst-case load, ambient, and airflow conditions using the 2.08 °C/W R_thJC value and measured case temperature.

Does STP2N105K5 require external gate protection?

No. STP2N105K5 integrates a bidirectional Zener diode between gate and source, rated for ±30 V, eliminating the need for external gate clamping components. This protection remains effective across the full operating temperature range and is verified per JEDEC JESD22-A114.

Can STP2N105K5 replace STD2N105K5 in existing designs?

Yes-STP2N105K5 and STD2N105K5 share identical electrical specifications, pinout, package (DPAK), and thermal characteristics. They differ only in packaging format: STD2N105K5 is supplied in tape-and-reel, while STP2N105K5 is offered in tube. No layout or schematic changes are required for substitution.

What is the significance of the 50 V/ns dv/dt ruggedness rating?

The 50 V/ns MOSFET dv/dt ruggedness rating means STP2N105K5 can withstand rapid voltage transients across drain-source without false turn-on or latch-up, even under high-temperature and high-current conditions. This is critical in noisy industrial environments where parasitic inductance causes steep voltage edges during switching transitions.