STMicroelectronics STP2N95K5

Overview

STP2N95K5 from STMicroelectronics is a 950 V, 4.2 Ω (typ), 2 A N-channel MDmesh K5 Power MOSFET in IPAK (TO-251) package, optimized for high-voltage switching in offline SMPS, AC-DC adapters, and industrial power supplies where low conduction loss and ultra-low gate charge are critical.

For engineers reviewing the STP2N95K5 datasheet, STP2N95K5 pinout, STP2N95K5 application, or STP2N95K5 equivalent, this device delivers industry-leading R_DS(on) × area and FoM for compact, high-efficiency 800–950 V systems with Zener-protected gate and 100% avalanche tested ruggedness.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to achieve 4.2 Ω typical R_DS(on) at 950 V BVDSS while maintaining ultra-low Q_g (10 nC) and Q_gd (8 nC), enabling fast, low-loss switching in hard-switched topologies. Its 50 V/ns dv/dt ruggedness and 50 mJ single-pulse avalanche energy support reliable operation under transient stress.

The integrated Zener-protected gate ensures ±30 V V_GS tolerance, and its source-drain diode exhibits 1.5 V forward voltage at 2 A and 300 ns trr at 25 °C - key for quasi-resonant and flyback snubberless designs requiring controlled body diode recovery.

Key Specifications

Pinout & Package

IPAK (TO-251) type C package: 3-pin surface-mount outline with exposed drain tab (pin 2) for thermal and electrical connection; compact 6.1 × 6.6 × 16.5 mm footprint ideal for space-constrained power stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STF2N95K5 and STD2N95K5, STP2N95K5 offers the lowest thermal resistance and most direct heatsink coupling via its exposed drain tab - making it optimal for thermally demanding, high-reliability 950 V applications where IPAK's mechanical stability and solderable tab provide superior long-term interfacial integrity.

Availability

STP2N95K5 is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, and LED street lighting systems requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp.

Supply support for STP2N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STP2N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline power conversion where minimizing R_DS(on) × area and gate charge is essential to system-level size and thermal performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP2N95K5 supports 1.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9952 Rev 2. This derating reflects thermal limitations of the IPAK package and ensures safe operation within SOA boundaries when heatsink temperature remains ≤100 °C.

Does STP2N95K5 include an integrated gate Zener diode?

Yes - the device integrates a bidirectional gate-source Zener clamp rated for ±30 V, confirmed in the "Features" section and validated by gate leakage current (±10 µA at ±20 V) in Table 4 of DS9952 Rev 2. This eliminates need for external gate protection in standard industrial drive circuits.

Can STP2N95K5 replace STP2NK90Z in existing designs?

No - STP2NK90Z is a 900 V, 4.5 Ω device using older MDmesh II technology with higher Q_g (16 nC) and no Zener gate protection. While pin-compatible, STP2N95K5 offers improved V_DSS, lower R_DS(on), and enhanced ruggedness, but requires validation of gate drive strength and SOA margins due to different dynamic characteristics.

What is the recommended minimum gate resistor for 100 kHz switching?

A 4.7 Ω gate resistor is validated in the datasheet's Figure 13 test circuit for 100 kHz-class operation. At this value, measured t_d(on) = 8.5 ns and t_f = 32.5 ns ensure clean switching with minimal overshoot while keeping gate drive power below 150 mW at 10 V drive amplitude.