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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP300NH02L

Name: STP300NH02L
Brand: STMicroelectronics
SKU: STP300NH02L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP300NH02L

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP300NH02L.pdf

Description:: MOSFET N-CH 24V 120A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,605

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Product details

Overview

STP300NH02L from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, designed for high-current OR-ing and DC/DC converter switching. It features 24 V V_DS, < 2.2 mΩ R_DS(on) at 10 V V_GS and 80 A, 120 A continuous drain current (T_C = 25°C), and 300 W total power dissipation - enabling low-loss power path control in redundant 12–24 V systems.

For engineers reviewing the STP300NH02L datasheet, STP300NH02L pinout, STP300NH02L application, or STP300NH02L equivalent, key selection criteria include R_DS(on) at operating temperature, gate charge (109.4 nC), safe operating area under pulsed load, source-drain diode recovery (63 ns trr), and thermal resistance (0.5 °C/W junction-to-case).

Technical Context

This MOSFET employs ST's STripFET™ III process to minimize conduction and switching losses simultaneously. Its low R_DS(on) × Q_g product establishes industry benchmark performance for high-current synchronous rectification and OR-ing circuits where forward voltage drop and turn-on loss dominate efficiency.

The device operates with ±20 V gate drive, supports unclamped inductive switching up to 60 A avalanche current, and delivers fast switching (td(on) = 18 ns, tf = 94.4 ns) with tightly controlled capacitance (C_iss = 7055 pF, C_rss = 307 pF) - critical for stable operation in high-frequency, high-density DC/DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	24 V - Maximum blocking voltage compatible with 12–24 V bus architectures without derating.
R_DS(on)	< 2.2 mΩ @ V_GS = 10 V, I_D = 80 A - Enables ≤0.176 W conduction loss at 120 A, reducing heatsink requirements.
I_D (cont)	120 A @ T_C = 25°C - Supports high-current power rails in server VRMs and telecom hot-swap modules.
Q_g	109.4 nC - Determines gate driver strength needed for <100 ns switching transitions at full load.
R_thj-case	0.5 °C/W - Allows 300 W power dissipation with ≤150°C junction rise above 25°C case temperature.
t_rr	63 ns @ T_j = 25°C - Minimizes reverse recovery loss during synchronous rectification in buck converters.

Pinout & Package

TO-220 package (3-lead, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. Drain-to-tab isolation enables direct mounting to heatsink without insulator when source-referenced layout is used.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≥10 V drive for full enhancement; input capacitance dominates switching timing.
Pin 2 (D)	Drain terminal / metal tab	High-current output node; electrically connected to package tab; must be thermally coupled to heatsink.
Pin 3 (S)	Source terminal	Reference node for gate drive and current sensing; ties to system ground or low-side return path.

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading figure-of-merit enabling lowest combined conduction + switching loss in 24 V OR-ing.
Low-profile TO-220	Height ≤14 mm - fits constrained board space while maintaining 300 W thermal capability.
ECOPACK® compliance	Lead-free second-level interconnect per JEDEC JESD97 - meets RoHS and halogen-free manufacturing requirements.
Robust avalanche rating	1.6 J single-pulse E_AS - withstands transient overvoltage events in unregulated DC bus applications.

Applications

Telecom Hot-Swap OR-ing

Server VRM High-Side Switch

Use Scenario: Dual 12 V power supplies feeding a common backplane with automatic failover on supply loss.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as ideal diode in active OR-ing controller loop.

Use Value: Replaces Schottky diodes to eliminate 0.4–0.6 V forward drop, reducing power loss by >70 % at 100 A.

Use Scenario: High-current step-down converter delivering 50–100 A to CPU/GPU core rails.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz.

Use Value: Achieves < 0.25 W conduction loss at 100 A, enabling compact thermal design without forced air.

Industrial 24 V Redundant PSU

Automotive 12 V DC/DC Isolation

Use Scenario: Dual-output 24 V industrial power supply with seamless redundancy for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass element in discrete OR-ing circuit with external gate driver.

Use Value: Maintains < 25 mV voltage drop across MOSFET at full load, preserving tight output regulation.

Use Scenario: 12 V battery-to-12 V isolated backup rail in automotive body control module.

IC Role / Device Role / Timing Role: High-current isolation switch enabling bidirectional fault containment.

Use Value: Withstands 480 A pulsed current (I_DM) during load dump transients without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ @ 10 V (more than double); Q_g = 131 nC; V_DS = 40 V	Higher conduction loss limits use to ≤60 A continuous; wider V_DS margin suits 36 V systems.	Select only if 40 V rating is required and thermal headroom allows higher R_DS(on).
IXTH120N20L-TR	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 125 nC; V_DS = 20 V; D²PAK package	Lower V_DS restricts to 12–15 V systems; surface-mount package reduces assembly cost but increases thermal resistance.	Prefer for SMT production where 20 V max is sufficient and PCB layout favors D²PAK footprint.

Compared with IRF1404ZPBF and IXTH120N20L-TR, STP300NH02L offers the lowest R_DS(on) × Q_g product in TO-220 for 24 V systems, delivering superior efficiency in high-current OR-ing and VRM applications where thermal management and gate drive energy are critical constraints.

Availability

STP300NH02L is available at Aetrix Electronics and suitable for telecom hot-swap OR-ing, server VRM high-side switching, and industrial 24 V redundant power supply designs requiring stable component supply and long-term manufacturability.

Supply support for STP300NH02L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion and power path control in infrastructure and computing applications.

FAQ

What is the maximum safe operating junction temperature for STP300NH02L?

The absolute maximum junction temperature is 175°C, with guaranteed operation from –55°C to 175°C. Derating begins at T_C = 25°C using the 2 W/°C factor; at T_C = 100°C, maximum power dissipation drops to 150 W. Thermal design must maintain T_j ≤ 150°C for reliable long-term operation under repetitive stress.

Can STP300NH02L be used in linear mode (non-switching) applications?

No - this MOSFET is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = 10 V, maximum continuous current is ~40 A; at V_DS = 20 V, it drops to ~15 A. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin.

Is STP300NH02L suitable for automotive applications?

It is not qualified as AEC-Q101 automotive grade. While electrically capable of 12 V automotive use, ST does not guarantee performance under automotive temperature cycling, humidity, or vibration stress. For automotive designs, ST recommends AEC-Q101-qualified alternatives such as STD35N2LH5 or STB300NH02L in D²PAK with automotive qualification documentation.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified from 1.0 V to 2.0 V at I_D = 250 µA. This low threshold enables logic-level drive compatibility, but full enhancement requires ≥10 V gate-source voltage to achieve rated R_DS(on). Drive circuits must deliver ≥10 V with sufficient peak current (>2 A) to charge 109.4 nC gate charge within required switching time.

STP300NH02L Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 109.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7055 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP300NH02L FAQ

1.How can I place an order for STP300NH02L through Aetrix?

Please submit a Request for Quotation (RFQ) for STP300NH02L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP300NH02L reliable?

The price and inventory of STP300NH02L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP300NH02L is usually 5 days.

3.What payment methods are accepted for STP300NH02L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP300NH02L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP300NH02L?

STP300NH02L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP300NH02L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP300NH02L?

For technical support, including STP300NH02L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP300NH02L requirements.

6.How does Aetrix verify that STP300NH02L is sourced from the original manufacturer or authorized distributors?

All STP300NH02L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP300NH02L meets industry standards.

7.What is the process for return or replacement of STP300NH02L?

All STP300NH02L units undergo pre-shipment inspection (PSI). If there is an issue with STP300NH02L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP300NH02L part is unused and in its original packaging.

Return procedure for STP300NH02L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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