Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP30NF10

Name: STP30NF10
Brand: STMicroelectronics
SKU: STP30NF10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP30NF10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP30NF10.pdf

Description:: MOSFET N-CH 100V 35A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:385

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP30NF10 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 100 V drain-source voltage, 35 A continuous drain current at 25°C, 0.038 Ω typical R_DS(on) at V_GS = 10 V, and optimized for high-efficiency DC-DC converters and motor control switches in industrial power supplies.

For engineers reviewing the STP30NF10 datasheet, STP30NF10 pinout, STP30NF10 application, or STP30NF10 equivalent, key selection criteria include its low gate charge (40 nC), rugged unclamped inductive switching capability (275 mJ E_AS), 28 V/ns dv/dt rating, and 100% avalanche-tested reliability under repetitive stress conditions.

Technical Context

This MOSFET employs ST's STripFET™ II process with strip-based cell architecture to achieve high die packing density and low specific on-resistance. Its gate structure minimizes Miller capacitance (C_rss = 80 pF) and enables fast switching with 15 ns turn-on delay and 10 ns fall time under standard test conditions (V_DD = 50 V, I_D = 15 A, R_G = 4.7 Ω).

The device features a robust body diode with 110 ns reverse recovery time and 390 nC reverse recovery charge at T_j = 150°C, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance junction-to-case is 5.0 °C/W, enabling 30 W total dissipation at 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 2× safety margin.
R_DS(on)	0.038 Ω (typ) at V_GS = 10 V - Delivers ≤5.4 W conduction loss at 35 A, critical for thermal management in compact heatsinks.
Q_g	40 nC - Low total gate charge reduces driver power demand and enables efficient operation above 100 kHz switching frequency.
E_AS	275 mJ - Single-pulse avalanche energy rating confirms ruggedness in inductive load transients without external snubbers.
dv/dt	28 V/ns - High immunity to false turn-on during fast voltage transitions in half-bridge configurations.
R_thj-case	5.0 °C/W - Enables direct mounting to aluminum heatsink for sustained 25 A operation at 100°C case temperature.

Pinout & Package

TO-220 package: 3-pin through-hole plastic package with isolated tab (drain-connected). Mounting flange is electrically connected to Drain (Pin 2). Standard lead spacing and footprint compatible with IPC-7351B TO-220A outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current in common-source configuration.
2 (Drain)	Drain terminal / Heatsink tab	Main power output path; electrically tied to metal tab for thermal conduction; requires isolation washer when mounted to grounded heatsink.
3 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by logic-level or dedicated gate driver; sensitive to ESD (±20 V max rating).

Key Features

Feature	Design Value
STripFET™ II process	Enables 0.038 Ω R_DS(on) in TO-220 without die size penalty-reducing PCB area vs. competing 40 mΩ devices.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥275 mJ-eliminates screening failure risk in inductive switching applications.
Low C_iss/C_oss ratio	1180 pF / 180 pF = 6.6:1-improves zero-voltage switching (ZVS) initiation in resonant converters.
ECOPACK® compliance	Lead-free second-level interconnect per JEDEC JESD97-meets RoHS and ELV Directive requirements without derating.

Applications

DC-DC Converter Primary Switch

Motor Drive Half-Bridge Leg

Use Scenario: 48 V input, 12 V/20 A output synchronous buck converter in telecom power shelf.

IC Role / Device Role / Timing Role: High-side main switch handling 35 A peak current with 100 kHz PWM duty cycling.

Use Value: 0.038 Ω R_DS(on) limits conduction loss to 26.6 W at full load, enabling natural convection cooling without fan.

Use Scenario: 24 V brushed DC motor controller for automated gate actuator with bidirectional torque.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg, commutated at ≤20 kHz with dead-time control.

Use Value: 28 V/ns dv/dt rating prevents spurious turn-on during high di/dt flyback events across motor inductance.

Uninterruptible Power Supply Inverter

Industrial AC-DC Front-End PFC

Use Scenario: 1 kVA offline UPS using full-bridge inverter stage feeding 230 VAC output.

IC Role / Device Role / Timing Role: Switching element in bridge arm subjected to 100 V DC bus and reactive load currents.

Use Value: 275 mJ E_AS withstands repeated line-surge-induced inductive kickback without degradation.

Use Scenario: Boost-type active PFC stage in 500 W industrial SMPS with universal AC input.

IC Role / Device Role / Timing Role: Main boost switch operating in continuous conduction mode at 65 kHz.

Use Value: 40 nC Q_g allows use of low-cost bipolar gate driver (e.g., UC3705) without excessive power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540N	R_DS(on) = 0.044 Ω (typ), Q_g = 71 nC, E_AS not specified	Lacks guaranteed avalanche rating; higher gate drive loss limits efficiency above 50 kHz	Acceptable for cost-sensitive 25 kHz motor drives where avalanche stress is absent
FQP30N10	R_DS(on) = 0.038 Ω (typ), Q_g = 42 nC, E_AS = 220 mJ (min)	Lower E_AS margin (−20%) and no 100% production avalanche test	Suitable for non-critical 48 V battery systems with controlled inductive loads

Compared with IRF540N and FQP30N10, STP30NF10 provides superior avalanche ruggedness and lower gate charge-making it preferred for high-reliability 100 kHz+ DC-DC and unclamped inductive switching where transient robustness is mandatory.

Availability

STP30NF10 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and uninterruptible power systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STP30NF10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP30NF10 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control applications up to 100 kHz.

FAQ

Is STP30NF10 suitable for surface-mount assembly?

No. STP30NF10 uses a TO-220 through-hole package with three leads and an isolated metal tab. It is not designed for reflow soldering or pick-and-place placement. For SMT alternatives, consider ST's D2PAK variant STB30NF10 or LFPAK variants like STL30N10LH5.

What is the maximum safe operating temperature for continuous operation?

The maximum junction temperature is 175°C, but continuous operation at full 35 A drain current requires case temperature ≤25°C (derated to 25 A at 100°C case). With R_thj-case = 5.0 °C/W, sustained 25 A operation is feasible at 100°C case temperature without exceeding T_j = 175°C.

Does STP30NF10 require a gate resistor for protection?

Yes. A series gate resistor (typically 10–47 Ω) is required to dampen ringing, limit peak gate current, and prevent oscillation during fast switching. The 40 nC gate charge and low C_iss/C_oss ratio make it especially sensitive to layout parasitics without proper gate termination.

Can STP30NF10 replace STP30NF06 in existing designs?

No. Although both share "30N" naming, STP30NF06 is a 60 V device (R_DS(on) = 0.030 Ω) with different safe operating area and avalanche characteristics. Substituting STP30NF10 into a 60 V design risks overvoltage stress on gate oxide and unnecessary cost premium without functional benefit.

STP30NF10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP30NF10 FAQ

1.How can I place an order for STP30NF10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP30NF10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP30NF10 reliable?

The price and inventory of STP30NF10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP30NF10 is usually 5 days.

3.What payment methods are accepted for STP30NF10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP30NF10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP30NF10?

STP30NF10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP30NF10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP30NF10?

For technical support, including STP30NF10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP30NF10 requirements.

6.How does Aetrix verify that STP30NF10 is sourced from the original manufacturer or authorized distributors?

All STP30NF10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP30NF10 meets industry standards.

7.What is the process for return or replacement of STP30NF10?

All STP30NF10 units undergo pre-shipment inspection (PSI). If there is an issue with STP30NF10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP30NF10 part is unused and in its original packaging.

Return procedure for STP30NF10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…