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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP30NM30N

Name: STP30NM30N
Brand: STMicroelectronics
SKU: STP30NM30N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP30NM30N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP30NM30N.pdf

Description:: MOSFET N-CH 300V 30A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:7,314

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Product details

Overview

STP30NM30N from STMicroelectronics is an N-channel 300V, 30A, 0.075Ω (typ) MDmesh™ II Power MOSFET in TO-220 package, optimized for high-efficiency primary-side switching in DC-DC converters and SMPS. It delivers ultra-low gate charge (75 nC), high dv/dt avalanche capability (18 V/ns), and low input capacitance (2500 pF).

For engineers reviewing the STP30NM30N datasheet, STP30NM30N pinout, STP30NM30N application, or STP30NM30N equivalent, key selection criteria include R_DS(on) at 10V drive, unclamped inductive avalanche energy (900 mJ), gate threshold voltage (2–4 V), and thermal resistance junction-to-case (0.78 °C/W).

Technical Context

This device employs ST's MDmesh™ II silicon architecture with advanced cell layout to minimize gate charge while maintaining robust 300V breakdown. Its low C_iss/C_rss ratio (2500 pF / 70 pF) supports fast, low-loss switching under hard-switching conditions.

The integrated source-drain diode exhibits 350 ns reverse recovery time and 5 μC Q_rr at 100 A/μs di/dt, enabling reliable operation in flyback and resonant topologies without external snubbing in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	300 V - Withstands up to 300 V drain-source blocking voltage before avalanche conduction.
R_DS(on)	0.075 Ω (typ) @ V_GS = 10 V, I_D = 15 A - Enables low conduction loss in high-current primary switches.
Q_g	75 nC - Reduces gate driver power demand and switching transition time in high-frequency SMPS.
E_AS	900 mJ - Supports repetitive unclamped inductive switching stress without failure at T_j ≤ 150°C.
dv/dt rating	18 V/ns - Ensures immunity to false turn-on during high-slew-rate voltage transients in bridge configurations.
R_thj-case	0.78 °C/W - Allows 160 W continuous dissipation at T_C = 25°C with minimal heatsink requirement.

Pinout & Package

TO-220 package with standard 3-pin configuration: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying high-side terminal	Electrically tied to internal drain structure; requires isolation when mounted to grounded heatsink.
Pin 1	Source	Reference node for gate drive and current return path; connects directly to PCB ground plane in low-side configurations.
Pin 2	Gate	High-impedance control input; driven by dedicated gate driver IC to achieve full enhancement at ≥10 V.

Key Features

Feature	Design Value
Ultra-low gate charge	75 nC total - reduces gate driver losses and enables >300 kHz operation in LLC and phase-shifted full-bridge designs.
High avalanche ruggedness	900 mJ single-pulse E_AS - eliminates need for external clamping in many offline flyback and PFC boost stages.
Low C_iss/C_rss ratio	2500 pF / 70 pF - improves Miller immunity and enables stable switching with moderate gate resistance (e.g., 4.7 Ω).
ECOPACK® compliance	Lead-free second-level interconnect - meets RoHS and JEDEC JESD97 requirements for industrial and consumer production.

Applications

AC-DC Adapter Primary Switch

Industrial DC-DC Converter

Use Scenario: 65–100 W universal-input offline flyback converter operating at 65–130 kHz.

IC Role / Device Role / Timing Role: Primary-side main switch handling full input rectified voltage (up to 400 V peak) and delivering regulated output via transformer coupling.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, enabling >88% efficiency at full load without active cooling.

Use Scenario: 200–500 W isolated half-bridge DC-DC module converting 48 V bus to 12 V/24 V outputs for factory automation PLCs.

IC Role / Device Role / Timing Role: High-side switching element in asymmetrical half-bridge topology with synchronous rectification on secondary side.

Use Value: 18 V/ns dv/dt rating prevents spurious turn-on during cross-conduction transitions, improving reliability in high-noise industrial environments.

Server PSU PFC Boost Stage

LED Driver Bulk Switch

Use Scenario: Active PFC front-end stage in 1 kW telecom server power supply operating in continuous conduction mode (CCM).

IC Role / Device Role / Timing Role: Main boost switch conducting 30 A peak current at 300 V DC link, synchronized to line frequency and PWM controller.

Use Value: 0.78 °C/W R_thj-case allows direct mounting to shared heatsink with other power stages, minimizing thermal footprint.

Use Scenario: Constant-current LED driver for high-bay lighting (150–300 W), using buck-derived topology with 300 V bulk capacitor.

IC Role / Device Role / Timing Role: High-voltage switching transistor controlling average LED current through duty-cycle modulation at 25–100 kHz.

Use Value: Integrated source-drain diode with 350 ns t_rr sustains freewheeling without external Schottky, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP30N30N3	Same V_DSS (300 V), lower R_DS(on) (0.065 Ω typ), higher Q_g (92 nC), TO-220FP package with isolated tab	Better conduction loss but slower switching; requires derating above 100 kHz due to higher gate charge	Prefer for <100 kHz, thermally constrained designs where conduction loss dominates
STW30NM30	Same die, TO-247 package, identical R_DS(on), Q_g, and avalanche rating; higher thermal mass and R_thj-case (0.55 °C/W)	Superior thermal performance at high ambient; larger footprint and cost premium	Prefer for >200 W continuous operation or extended ambient temperature (>70°C)

Compared with IPP30N30N3 and STW30NM30, the STP30NM30N offers optimal balance of switching speed, thermal resistance, and board space for mid-power SMPS-making it ideal for cost-sensitive, volume-manufactured 65–300 W systems where TO-220 mechanical fit is required.

Availability

STP30NM30N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED driver bulk switching requiring stable component supply across multi-year production cycles.

Supply support for STP30NM30N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete power devices, and MEMS sensors.

The MDmesh™ II product line targets high-efficiency, medium-voltage power conversion-specifically engineered to reduce gate charge and improve avalanche ruggedness in 200–500 V switching applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STP30NM30N supports 18.5 A continuous drain current at T_C = 100°C, per Absolute Maximum Ratings Table 1. This derating reflects thermal limits of the TO-220 package and ensures safe operation within its 0.78 °C/W R_thj-case specification without exceeding 150°C junction temperature.

Does this MOSFET have an integrated body diode, and what are its recovery characteristics?

Yes, STP30NM30N includes an integral source-drain diode with 350 ns reverse recovery time (t_rr) and 5 μC reverse recovery charge (Q_rr) at I_SD = 30 A, di/dt = 100 A/μs, and T_j = 25°C. These values are measured under standardized inductive test conditions (Figure 14, datasheet page 8) and confirm suitability for freewheeling in flyback and buck-derived topologies.

Can STP30NM30N be driven directly from a microcontroller GPIO?

No. With a gate threshold voltage of 2–4 V and requiring 10 V for full enhancement, plus 75 nC total gate charge, direct GPIO drive would cause slow, lossy, and thermally unsafe switching. A dedicated gate driver IC (e.g., STMicro's STD4N60M2 or TI's UCC27531) is mandatory to achieve specified switching times and avoid shoot-through or thermal runaway.

Is the TO-220 package lead-free and RoHS-compliant?

Yes. STP30NM30N is supplied in an ECOPACK®-compliant TO-220 package with lead-free second-level interconnect, certified per JEDEC JESD97 and fully compliant with EU RoHS Directive 2011/65/EU. The inner box label indicates the lead-free status and maximum soldering profile parameters.

STP30NM30N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 300 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP30NM30N FAQ

1.How can I place an order for STP30NM30N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP30NM30N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP30NM30N reliable?

The price and inventory of STP30NM30N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP30NM30N is usually 5 days.

3.What payment methods are accepted for STP30NM30N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP30NM30N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP30NM30N?

STP30NM30N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP30NM30N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP30NM30N?

For technical support, including STP30NM30N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP30NM30N requirements.

6.How does Aetrix verify that STP30NM30N is sourced from the original manufacturer or authorized distributors?

All STP30NM30N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP30NM30N meets industry standards.

7.What is the process for return or replacement of STP30NM30N?

All STP30NM30N units undergo pre-shipment inspection (PSI). If there is an issue with STP30NM30N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP30NM30N part is unused and in its original packaging.

Return procedure for STP30NM30N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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