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STMicroelectronics STP30NM50N
- Part No.:
- STP30NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP30NM50N.pdf
- Description:
- MOSFET N-CH 500V 27A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,107
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Product details
Overview
STP30NM50N from STMicroelectronics is an N-channel 500 V, 27 A, 0.090 Ω RDS(on) MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (94 nC), and low input capacitance (2740 pF), enabling fast switching in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STP30NM50N datasheet, STP30NM50N pinout, STP30NM50N application, or STP30NM50N equivalent, key selection criteria include its 500 V VDSS, 0.090 Ω RDS(on) at VGS = 10 V, 94 nC total gate charge, 150 °C max junction temperature, and TO-220 thermal resistance of 3.1 °C/W (junction-to-case).
Technical Context
This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 500 V breakdown voltage and 27 A continuous drain current support operation in universal-input AC-DC converters up to 3 kW.
The MOSFET delivers 900 mJ single-pulse avalanche energy and supports 15 V/ns dv/dt robustness under inductive switching. Its source-drain diode exhibits 480 ns reverse recovery time and 8 µC Qrr at Tj = 25 °C, enabling efficient hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands full rectified 380 VAC line surges in offline PSUs without breakdown |
| RDS(on) max | 0.115 Ω - Ensures ≤ 84 W conduction loss at 27 A, critical for thermal management in enclosed enclosures |
| Qg | 94 nC - Enables <100 ns switching transitions with 10 Ω gate driver, reducing turn-on loss in 100 kHz designs |
| ID (TC = 25 °C) | 27 A - Supports peak power delivery in 1–3 kW industrial power supplies with forced-air cooling |
| Rthj-case | 3.1 °C/W - Allows 61 W dissipation at ΔT = 190 °C (150 °C Tj − 25 °C TC), matching standard TO-220 heatsinks |
| EAS | 900 mJ - Sustains unclamped inductive switching events in relay drivers or solenoid controls without failure |
| Ciss | 2740 pF - Low enough to avoid excessive Miller-induced shoot-through in half-bridge configurations |
Pinout & Package
STP30NM50N is housed in a through-hole TO-220 package with isolated tab (pin 2 connected to drain). The package provides mechanical robustness, standardized mounting, and direct heatsink coupling via the metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Low-impedance connection to ground plane; carries full 27 A continuous current; referenced for gate drive |
| 2 (Drain) | Main high-side power terminal | Connected to internal die backside; electrically tied to metal tab; requires isolation from heatsink unless floating topology |
| 3 (Gate) | Control input for channel modulation | High-impedance MOS gate requiring <100 nC charge; sensitive to ESD; must be driven with <25 V to avoid oxide damage |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees 12 A repetitive avalanche current and 900 mJ single-pulse energy survival under unclamped inductive loads |
| Low gate charge (94 nC) | Reduces gate driver power loss and enables use of cost-effective 1-A drivers in 65–100 kHz SMPS designs |
| Low RDS(on) (0.090 Ω typ.) | Lowers I²R conduction loss by >30% vs. first-gen 500 V MOSFETs, improving efficiency in high-current PFC stages |
| MDmesh™ II vertical structure | Optimizes cell pitch and drift region doping to achieve best-in-class figure-of-merit (RDS(on) × Qg) of 8.46 Ω·nC |
| ECOPACK® RoHS-compliant | Lead-free second-level interconnect meets JEDEC JESD97; compatible with standard SnPb and lead-free reflow profiles |
Applications
| Industrial Switched-Mode Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 1.5 kW open-frame AC-DC power supply with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage power switch operating at 70 kHz with 500 V DC bus and 27 A peak current. Use Value: 0.090 Ω RDS(on) reduces conduction loss by 12 W vs. legacy 0.13 Ω devices, enabling 94.2% full-load efficiency. |
Use Scenario: Hold-up capacitor charging switch and main DC-DC converter switch in 48 V telecom rectifier system. IC Role / Device Role / Timing Role: Fast-turning N-channel switch handling 25 A continuous current in asymmetric half-bridge configuration. Use Value: 94 nC Qg allows clean 80 ns turn-on with minimal overlap loss, reducing switching loss by 28% over competing 120 nC parts. |
| Motor Drive Inverters | Induction Heating Half-Bridge |
|
Use Scenario: Upper-leg switch in 3-phase 7.5 HP inverter driving permanent magnet synchronous motor. IC Role / Device Role / Timing Role: 500 V blocking element rated for 600 V bus transients during regenerative braking. Use Value: 15 V/ns dv/dt rating prevents false turn-on during high-di/dt commutation, eliminating need for negative gate bias. |
Use Scenario: High-side switch in 20 kHz resonant half-bridge for domestic induction cooktop (3.3 kW output). IC Role / Device Role / Timing Role: Hard-switched power transistor conducting 27 A RMS with 100 A peak surge currents. Use Value: 900 mJ EAS withstands repeated 100 A/µs di/dt events during zero-crossing switching, ensuring 10-year field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R099C7 | 650 V VDSS, 0.099 Ω RDS(on), 71 nC Qg, TO-220 package | Higher voltage rating suits 400 V DC bus systems; lower Qg improves light-load efficiency | Prefer when designing for 650 V systems or needing lower gate drive loss; not drop-in due to different threshold voltage (3.5 V vs. 3.0 V) |
| FDPF18N50 | 500 V VDSS, 0.18 Ω RDS(on), 72 nC Qg, TO-220FP package | Higher RDS(on) increases conduction loss; TO-220FP offers insulated tab but lower power rating (40 W) | Select only for space-constrained layouts requiring insulated mounting; avoid in >1 kW designs due to thermal derating |
Compared with IPP60R099C7 and FDPF18N50, STP30NM50N delivers the lowest RDS(on) among TO-220 500 V MOSFETs, making it optimal for thermally constrained high-current applications where conduction loss dominates, while maintaining proven avalanche ruggedness for industrial reliability.
Availability
STP30NM50N is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, server rectifiers, and motor drive inverters requiring stable component supply and long-term manufacturing continuity.
Supply support for STP30NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions across automotive, industrial, power, and microcontroller domains since 1987.
STP30NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure equipment.
FAQ
What is the maximum continuous drain current for STP30NM50N at 100 °C case temperature?
The maximum continuous drain current is 17 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220 package, where junction-to-case thermal resistance (3.1 °C/W) and safe operating area constraints reduce current handling above 25 °C case temperature.
Does STP30NM50N have an integrated body diode, and what are its key recovery characteristics?
Yes, it includes a monolithic source-drain body diode rated for 27 A continuous and 108 A pulsed current. At Tj = 25 °C, its reverse recovery time is 480 ns, Qrr is 8 µC, and peak reverse recovery current is 33 A under 100 A/µs di/dt conditions - parameters critical for snubberless hard-switching design.
Can STP30NM50N be used in avalanche mode, and what is its rated avalanche energy?
Yes, it is 100% tested for repetitive and non-repetitive avalanche operation. The datasheet specifies 12 A maximum avalanche current and 900 mJ single-pulse avalanche energy at Tj = 25 °C, validated using unclamped inductive load testing per JEDEC standards.
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(th) is specified from 2.0 V to 4.0 V at Tj = 25 °C, with typical value 3.0 V. Figure 14 shows normalized VGS(th) decreases ~0.5%/°C above 25 °C, reaching ~0.8× nominal at 150 °C - a key consideration for gate drive margin in high-temperature environments.
STP30NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 94 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2740 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP30NM50N FAQ
1.How can I place an order for STP30NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP30NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP30NM50N reliable?
The price and inventory of STP30NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP30NM50N is usually 5 days.
3.What payment methods are accepted for STP30NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP30NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP30NM50N?
STP30NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP30NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP30NM50N?
For technical support, including STP30NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP30NM50N requirements.
6.How does Aetrix verify that STP30NM50N is sourced from the original manufacturer or authorized distributors?
All STP30NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP30NM50N meets industry standards.
7.What is the process for return or replacement of STP30NM50N?
All STP30NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP30NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP30NM50N part is unused and in its original packaging.
Return procedure for STP30NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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