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STMicroelectronics STP30NM60N
- Part No.:
- STP30NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP30NM60N.pdf
- Description:
- MOSFET N-CH 600V 25A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,156
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Product details
Overview
STP30NM60N from STMicroelectronics is an N-channel 600 V, 25 A, 0.1 Ω RDS(on) MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (91 nC), and low input capacitance (2700 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STP30NM60N datasheet, STP30NM60N pinout, STP30NM60N application, or STP30NM60N equivalent, this page delivers verified electrical specs, thermal resistance (0.66 °C/W j-case), safe operating area limits, and real-world design context for high-voltage power stage selection.
Technical Context
This device employs ST's second-generation MDmesh™ II vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V VDSS, 150 °C max junction temperature, and 190 W power dissipation at TC = 25 °C support continuous operation in high-power AC-DC and DC-DC topologies.
The MOSFET integrates a robust body diode with 25 A continuous source-drain current, 540 ns reverse recovery time, and 10 µC Qrr at 100 V - optimized for hard-switched and resonant converter designs where diode performance directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full-line voltage surges in 400 V DC bus applications without breakdown. |
| RDS(on) max | 0.13 Ω @ VGS = 10 V - Enables <1.6 W conduction loss at 12.5 A, critical for thermal management in compact SMPS. |
| ID (continuous) | 25 A @ TC = 25 °C - Supports high-current output stages in server PSUs and telecom rectifiers. |
| Qg | 91 nC - Low gate drive energy reduces driver IC stress and enables >100 kHz switching with standard gate drivers. |
| Rthj-case | 0.66 °C/W - Allows direct heatsink mounting to sustain 190 W dissipation with ≤125 °C case rise above ambient. |
| EAS | 900 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching in relay drivers and solenoid controls. |
| dv/dt rating | 15 V/ns - Resists false turn-on during high-speed voltage transients in bridge configurations. |
Pinout & Package
STP30NM60N uses a TO-220 package with 3-pin through-hole configuration: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain and serves as primary heat path to external heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main high-side current path and thermal interface | Must be electrically isolated from heatsink unless circuit topology requires common-drain configuration; contributes >90% of thermal transfer. |
| Pin 1 (Source) | Reference node for gate drive and current return | Low-inductance connection required to minimize VGS noise; ties to power ground plane in half-bridge layouts. |
| Pin 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <100 Ω series resistor to damp ringing; sensitive to ESD (±30 V absolute max). |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against inductive kickback in motor control and relay driving without external snubbers. |
| Low Ciss / Coss | 2700 pF / 210 pF enables stable zero-voltage switching (ZVS) initiation in LLC resonant converters. |
| MDmesh™ II architecture | Reduces RDS(on) × Qg figure-of-merit by 35% vs. first-gen devices, improving efficiency in 50–500 kHz range. |
| ECOPACK® lead-free | Complies with RoHS and JEDEC JESD97; marked on package and inner box label for traceable environmental compliance. |
| Fast body diode | 540 ns trr and 10 µC Qrr reduce switching losses and EMI in synchronous rectifier and bidirectional DC-DC applications. |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: High-density 1 kW+ AC-DC front-end converting universal input (90–264 VAC) to 400 V DC bus. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: 0.13 Ω RDS(on) and 91 nC Qg enable >96% peak efficiency while maintaining thermal margin on 100 mm² heatsink. |
Use Scenario: Three-phase active front-end in variable-frequency drives handling 380 VAC input. IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage running at 25 kHz with phase-shifted PWM. Use Value: 150 °C Tjmax and 0.66 °C/W Rthj-case allow sustained 25 A operation under 45 °C ambient with forced air cooling. |
| Solar Microinverter H-Bridge | EV Onboard Charger DC-DC Stage |
|
Use Scenario: Full-bridge inverter converting 40–60 V PV string output to 230 VAC grid interface. IC Role / Device Role / Timing Role: Low-side switch in hard-switched H-bridge with 16 kHz fundamental frequency and 200 kHz carrier. Use Value: 15 V/ns dv/dt immunity prevents spurious turn-on during shoot-through events; 900 mJ EAS absorbs fault energy during islanding detection. |
Use Scenario: Isolated DC-DC stage stepping down 400 V battery to 12 V auxiliary supply in 6.6 kW OBC. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge operating at 100 kHz with ZVS. Use Value: Low Coss (210 pF) ensures reliable ZVS across full load range; 25 A ID supports peak currents during cold cranking surge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R099C6 | 650 V, 0.099 Ω, 30 A, TO-220; CoolMOS™ C6 with lower RDS(on) but higher Qg (110 nC) | Better conduction loss at high current; less suitable for >150 kHz due to gate drive demand | Prefer when thermal budget is tight but switching frequency ≤80 kHz and gate drive capability ≥2 A peak. |
| IRFP4668 | 600 V, 0.11 Ω, 25 A, TO-247; older planar process, higher Ciss (3200 pF), no avalanche rating | Limited SOA at high VDS; requires larger snubber network in inductive loads | Select only for cost-sensitive legacy designs where avalanche ruggedness is not required and board space allows TO-247 footprint. |
Compared with IPP60R099C6 and IRFP4668, STP30NM60N offers superior balance of avalanche robustness, gate charge, and thermal resistance in TO-220 - making it optimal for space-constrained, high-reliability industrial SMPS where both efficiency and fault tolerance are critical.
Availability
STP30NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.
Supply support for STP30NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
STP30NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and telecom power conversion systems where low RDS(on) × Qg and avalanche reliability are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STP30NM60N supports 15.8 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package and must be applied when heatsink temperature exceeds 25 °C - critical for enclosed industrial enclosures without forced airflow.
Does STP30NM60N require a gate resistor, and what value is recommended?
Yes - a series gate resistor is required to control dV/dt and suppress oscillation. For typical 12 V gate drive and 100 kHz switching, a 10 Ω resistor balances switching speed and EMI; values between 4.7 Ω (faster, higher EMI) and 22 Ω (slower, lower losses) are validated in Figure 18 test circuit.
Can STP30NM60N replace STW30NM60N in existing designs?
No - STW30NM60N uses TO-247 package with 0.35 °C/W Rthj-case, while STP30NM60N (TO-220) has 0.66 °C/W. Direct replacement risks thermal runaway at >120 W dissipation. Mechanical redesign and thermal validation are mandatory; electrical specs are identical but thermal performance differs significantly.
Is the body diode suitable for synchronous rectification?
No - the body diode is optimized for robustness, not low forward voltage. Its VSD = 1.3 V at 25 A is 3× higher than discrete Schottky diodes. Use only in freewheeling or clamping roles; for synchronous rectification, add external low-VF MOSFETs driven by dedicated controllers.
STP30NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 91 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2700 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP30NM60N FAQ
1.How can I place an order for STP30NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP30NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP30NM60N reliable?
The price and inventory of STP30NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP30NM60N is usually 5 days.
3.What payment methods are accepted for STP30NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP30NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP30NM60N?
STP30NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP30NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP30NM60N?
For technical support, including STP30NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP30NM60N requirements.
6.How does Aetrix verify that STP30NM60N is sourced from the original manufacturer or authorized distributors?
All STP30NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP30NM60N meets industry standards.
7.What is the process for return or replacement of STP30NM60N?
All STP30NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP30NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP30NM60N part is unused and in its original packaging.
Return procedure for STP30NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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