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STMicroelectronics STP30NM60ND
- Part No.:
- STP30NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP30NM60ND.pdf
- Description:
- MOSFET N-CH 600V 25A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,493
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Product details
Overview
STP30NM60ND from STMicroelectronics is an N-channel 600 V, 0.11 Ω RDS(on), 25 A FDmesh™ II Power MOSFET with integrated fast-recovery body diode in TO-220 package. It delivers high dv/dt immunity (48 V/ns), 100% avalanche tested ruggedness, and low gate charge (100 nC) for hard-switching ZVS phase-shift converters and industrial SMPS.
For engineers reviewing the STP30NM60ND datasheet, STP30NM60ND pinout, STP30NM60ND application, or STP30NM60ND equivalent, this device is selected for high-voltage bridge topologies requiring fast diode recovery (trr = 170 ns), low conduction loss, and robust unclamped inductive switching capability (EAS = 900 mJ).
Technical Context
This FDmesh™ II MOSFET uses a vertical strip layout combining reduced on-resistance with intrinsic fast-recovery body diode performance - enabling efficient operation in zero-voltage-switching (ZVS) resonant converters without external diodes. Its 600 V VDSS, 150 °C TJ(max), and 40 V/ns rated dv/dt support high-reliability industrial power stages.
The device features low input capacitance (Ciss = 2800 pF), low gate input resistance (3.0 Ω), and optimized gate charge distribution (Qgd/Qg = 54/100 nC), enabling precise timing control in high-frequency (>100 kHz) half-bridge and full-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands DC bus voltages up to 480 V in 400 V AC-input PFC and offline SMPS. |
| RDS(on) max | 0.13 Ω @ VGS = 10 V, ID = 12.5 A - Enables <1.6 W conduction loss at 25 A continuous drain current. |
| ID (TC = 25 °C) | 25 A - Supports high-current output stages in telecom rectifiers and motor drives. |
| EAS | 900 mJ - Absorbs single-pulse inductive energy without failure in unclamped switching events. |
| trr | 170 ns @ ISD = 25 A, dI/dt = 100 A/µs - Minimizes reverse recovery loss and EMI in bridge-leg commutation. |
| Qg | 100 nC - Enables gate drive design with standard 1–2 A peak drivers at 100–200 kHz switching frequencies. |
| Rthj-case | 0.66 °C/W - Allows >150 W dissipation with moderate heatsinking in TO-220 mounting. |
Pinout & Package
STP30NM60ND is housed in a through-hole TO-220 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to high-side potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate (G) | High-impedance MOSFET control input; requires <100 nC charge for full enhancement; sensitive to ESD. |
| 2 (Middle) | Drain (D) | Main high-voltage power terminal; connected to metal tab; carries full load current and avalanche energy. |
| 3 (Right) | Source (S) | Power return path and gate reference node; low-inductance connection critical for switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| FDmesh™ II vertical structure | Reduces RDS(on) × area by 30% vs. first-gen MDmesh, enabling higher power density in TO-220 footprint. |
| Intrinsic fast-recovery body diode | trr = 170 ns and Qrr = 1.2 µC - Eliminates need for external anti-parallel diode in synchronous rectifier and LLC resonant circuits. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 900 mJ - Ensures reliability under transient overvoltage and short-circuit conditions. |
| Low Ciss/Coss ratio | Ciss = 2800 pF, Coss = 200 pF - Improves voltage-dependent switching efficiency and reduces Miller-induced shoot-through risk. |
| ECOPACK® lead-free construction | Complies with RoHS and JEDEC JESD97; second-level interconnect qualified for Pb-free reflow and wave soldering. |
Applications
| ZVS Phase-Shift Full-Bridge Converter | Industrial AC-DC Rectifier |
|---|---|
|
Use Scenario: High-efficiency 1–3 kW telecom or server PSU using zero-voltage switching to minimize turn-on loss. IC Role / Device Role / Timing Role: High-side and low-side primary switch in full-bridge topology; body diode conducts during dead-time for ZVS initiation. Use Value: Fast trr (170 ns) and low Qrr reduce dead-time loss and EMI; 600 V rating supports 400 V AC-input designs with margin. |
Use Scenario: Three-phase 400 V AC-input rectification with active PFC stage feeding downstream DC-DC conversion. IC Role / Device Role / Timing Role: Switching element in boost PFC cell; handles 25 A continuous current and 600 V blocking. Use Value: Low RDS(on) (0.11 Ω) limits conduction loss to <7 W at full load; 150 °C TJ(max) enables compact thermal design. |
| Motor Drive Inverter Stage | Uninterruptible Power Supply (UPS) Output Stage |
|
Use Scenario: 3 kW BLDC or induction motor inverter for HVAC compressors or industrial pumps. IC Role / Device Role / Timing Role: Half-bridge leg switch; operates at 8–16 kHz PWM with body diode freewheeling during modulation. Use Value: Avalanche ruggedness (12 A IAR) withstands motor inductive kickback; low gate charge enables clean gate drive with cost-effective drivers. |
Use Scenario: Online double-conversion UPS output inverter delivering clean 230 V AC from 400 V DC bus. IC Role / Device Role / Timing Role: Final-stage switching device in H-bridge inverter; blocks 600 V and switches 25 A RMS output current. Use Value: High dv/dt immunity (48 V/ns) prevents false triggering during fast bus transients; TO-220 mechanical robustness supports long-life field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW30NM60ND | Same die, TO-247 package; Rthj-case = 0.33 °C/W (vs. 0.66 °C/W); 100 A pulsed ID rating. | Better thermal performance for >200 W continuous operation; larger footprint and mounting complexity. | Select when board space allows TO-247 and thermal budget demands <0.4 °C/W junction-to-case resistance. |
| FDPF30N60NZ | ON Semiconductor FDmesh III device; RDS(on) = 0.105 Ω, Qg = 95 nC, trr = 150 ns; TO-220FP package. | Slightly faster diode and lower gate charge, but TO-220FP has higher Rthj-case (3.1 °C/W) and lower ID rating (15.8 A). | Select for space-constrained layouts where lower Qg improves driver efficiency, accepting reduced current handling. |
Compared with STW30NM60ND and FDPF30N60NZ, STP30NM60ND offers optimal balance of TO-220 thermal capability (0.66 °C/W), 25 A continuous rating, and proven FDmesh II diode performance-making it preferred for mid-power industrial SMPS where package size, cost, and ruggedness are jointly constrained.
Availability
STP30NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, and AC-DC rectifiers requiring stable component supply across multi-year production cycles.
Supply support for STP30NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STP30NM60ND belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating above 300 V DC bus, with emphasis on ZVS topologies and rugged avalanche performance.
FAQ
What is the maximum continuous drain current for STP30NM60ND at 100 °C case temperature?
The maximum continuous drain current is 15.8 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220 package; operation above this requires active cooling or pulse-width limitation to maintain junction temperature ≤150 °C.
Does STP30NM60ND require an external flyback diode in bridge configurations?
No - STP30NM60ND integrates a fast-recovery body diode with trr = 170 ns and Qrr = 1.2 µC, validated for use in ZVS phase-shift converters and LLC resonant topologies without external anti-parallel diodes. Its diode is intrinsic to the FDmesh™ II process and fully characterized in the datasheet.
What is the safe operating area (SOA) limitation for repetitive pulsed operation?
At TC = 25 °C, the SOA curve (Figure 2) permits 25 A at 300 V for pulse widths ≤10 ms. For repetitive pulses, the limiting factor is average power dissipation - constrained by Rthj-case = 0.66 °C/W and TJ(max) = 150 °C. Derating is required above 100 °C case temperature.
Is STP30NM60ND compliant with RoHS and REACH regulations?
Yes - STP30NM60ND is manufactured in ST's ECOPACK® package, which meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device uses lead-free second-level interconnect and is marked accordingly on packaging per JEDEC JESD97 standards.
STP30NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP30NM60ND FAQ
1.How can I place an order for STP30NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STP30NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP30NM60ND reliable?
The price and inventory of STP30NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP30NM60ND is usually 5 days.
3.What payment methods are accepted for STP30NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP30NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP30NM60ND?
STP30NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP30NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP30NM60ND?
For technical support, including STP30NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP30NM60ND requirements.
6.How does Aetrix verify that STP30NM60ND is sourced from the original manufacturer or authorized distributors?
All STP30NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP30NM60ND meets industry standards.
7.What is the process for return or replacement of STP30NM60ND?
All STP30NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STP30NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP30NM60ND part is unused and in its original packaging.
Return procedure for STP30NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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