STMicroelectronics STP310N10F7

Overview

STP310N10F7 from STMicroelectronics is an N-channel 100 V, 2.3 mΩ typ. R_DS(on), 180 A continuous drain current Power MOSFET in TO-220 package, utilizing STripFET™ VII and DeepGATE™ technology. It delivers ultra-low conduction loss for high-efficiency DC-DC converters and motor drive half-bridges operating at 48 V bus voltage.

For engineers reviewing the STP310N10F7 datasheet, STP310N10F7 pinout, STP310N10F7 application, or STP310N10F7 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 720 A pulsed current capability, 100% avalanche-tested ruggedness, and thermal resistance of 0.48 °C/W junction-to-case.

Technical Context

This MOSFET employs a 7th-generation STripFET™ cell structure with optimized gate trench geometry to minimize specific on-resistance while maintaining robust safe operating area (SOA) up to 720 A pulsed drain current. Its DeepGATE™ architecture reduces gate charge (Q_g = 180 nC) and reverse transfer capacitance (C_rss = 170 pF), enabling fast switching with low EMI in hard-switched topologies.

The device features a fully rated source-drain diode with 85 ns reverse recovery time (t_rr) and 200 nC reverse recovery charge (Q_rr) at 150 °C junction temperature, supporting synchronous rectification and freewheeling in high-frequency buck converters without external Schottky supplementation.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (pin 3), standard 3-pin vertical lead frame. Tab is electrically connected to the drain terminal and must be mounted to heatsink with insulating washer if system ground isolation is required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IRFP4468PbF and IXFH32N100X, STP310N10F7 offers the lowest R_DS(on) in TO-220 form factor and guaranteed 1 J avalanche energy-critical for space-constrained, fault-tolerant industrial power stages where thermal resistance below 0.5 °C/W is mandatory.

Availability

STP310N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STP310N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ VII Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 48 V–100 V industrial power conversion systems where low R_DS(on), rugged avalanche performance, and TO-220 thermal efficiency are primary design constraints.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP310N10F7 supports 120 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package and must be validated with actual heatsink thermal resistance and ambient conditions in the target application.

Is the TO-220 tab electrically isolated from the leads?

No-the TO-220 tab is internally connected to the drain (pin 3) and is not electrically isolated from the package leads. When mounting to a heatsink, use an insulating pad or shoulder washer if the heatsink is grounded or at a different potential than the drain node.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω to 10 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop and prevent spurious turn-on due to Miller effect. The datasheet Figure 13 switching test circuit uses RG = 4.7 Ω for characterization.

Can STP310N10F7 replace older STP30NF10 or STP36NF10 in existing designs?

Yes-STP310N10F7 is a direct upgrade with lower R_DS(on) (2.3 mΩ vs. 3.3 mΩ/2.8 mΩ), improved Q_g, and enhanced avalanche rating. Pin-compatible in TO-220, but verify gate drive strength and thermal margin due to higher peak current capability and reduced losses.