STMicroelectronics STP315N10F7

Overview

STP315N10F7 from STMicroelectronics is an automotive-grade N-channel Power MOSFET with 100 V V_DS, 2.3 mΩ typ. R_DS(on) at V_GS = 10 V and 60 A, 180 A continuous drain current at T_C = 25 °C, and TO-220 package. It serves as a high-current switching element in DC-DC converters, motor drives, and battery disconnect circuits where low conduction loss and avalanche ruggedness are critical.

For engineers reviewing the STP315N10F7 datasheet, STP315N10F7 pinout, STP315N10F7 application, or STP315N10F7 equivalent, key selection criteria include its AEC-Q101 qualification, 1 J single-pulse avalanche energy rating, 0.48 °C/W junction-to-case thermal resistance, Crss/Ciss ratio optimized for EMI immunity, and gate charge profile supporting fast, efficient hard-switching in 48 V automotive systems.

Technical Context

This device implements STripFET™ F7 trench-gate technology to achieve ultra-low R_DS(on) while reducing C_iss (12800 pF typ.) and Q_g (180 nC typ.), enabling high-frequency operation with minimized switching losses. Its enhanced internal structure delivers high dV/dt immunity and robust unclamped inductive switching capability.

The MOSFET features a source-drain diode with 1.5 V forward voltage at 60 A and 85 ns reverse recovery time under 180 A/100 A/µs conditions, supporting synchronous rectification and freewheeling in high-power buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Tab is electrically connected to drain (D) and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IPP180N10N3 and NTMFS5C673NL, STP315N10F7 uniquely balances automotive qualification, 180 A current rating, and 2.3 mΩ conduction loss in a standard TO-220 footprint-making it optimal for cost-sensitive, thermally demanding automotive power stages where qualification and ruggedness are mandatory.

Availability

STP315N10F7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drivers, and on-board charger input stages requiring stable component supply across extended product lifecycles.

Supply support for STP315N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power conversion in automotive and industrial applications, emphasizing low R_DS(on), fast switching, and ruggedness under harsh thermal and electrical stress.

FAQ

What is the maximum safe operating area (SOA) for STP315N10F7 at 100 °C case temperature?

At T_C = 100 °C, the SOA limits continuous DC operation to 120 A with V_DS ≤ 10 V, or 60 A with V_DS ≤ 50 V, per Figure 2 in the datasheet. Pulsed operation up to 720 A is permitted only for durations ≤10 µs and duty cycle ≤1%, constrained by thermal runaway and bond-wire fusing limits.

Is the TO-220 tab of STP315N10F7 electrically isolated or drain-connected?

The TO-220 tab is directly connected to the drain terminal (D), as confirmed by the internal schematic (Figure 1), pinout table (Table 1), and mechanical drawing (Figure 19). Electrical isolation must be implemented externally using insulating washers or mica pads when mounting to a grounded heatsink.

Does STP315N10F7 support gate drive voltages below 10 V?

Yes - V_GS(th) ranges from 2.5 V to 4.5 V, enabling partial enhancement at 5 V. However, R_DS(on) rises sharply below 8 V: at V_GS = 5 V and I_D = 60 A, R_DS(on) exceeds 5.2 mΩ (typ.), increasing conduction loss by >125% versus 10 V drive. Full performance requires ≥10 V gate bias.

How does the source-drain diode's reverse recovery behavior impact layout in half-bridge configurations?

The diode exhibits 85 ns t_rr and 4.7 A I_RRM under 180 A/100 A/µs conditions. Layout must minimize loop inductance (<15 nH) between source, drain, and gate nodes to suppress voltage overshoot during recovery; a 100 nF ceramic capacitor placed directly across source-drain terminals near the MOSFET reduces ringing and EMI.