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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP318N4F6

Name: STP318N4F6
Brand: STMicroelectronics
SKU: STP318N4F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP318N4F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP318N4F6.pdf

Description:: MOSFET N-CH 40V 160A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,176

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Product details

Overview

STP318N4F6 from STMicroelectronics is an N-channel Power MOSFET using STripFET™ F6 trench-gate technology, designed for high-current switching in power supplies and motor drives. It delivers 40 V V_DS, 1.7 mΩ typ. R_DS(on) at V_GS = 10 V, 160 A continuous drain current, and 1100 mJ single-pulse avalanche energy - enabling robust operation in 48 V DC bus systems with low conduction loss.

For engineers reviewing the STP318N4F6 datasheet, STP318N4F6 pinout, STP318N4F6 application, or STP318N4F6 equivalent, key selection criteria include its ultra-low gate charge (240 nC), high avalanche ruggedness, thermal resistance of 0.44 °C/W, and TO-220 package compatibility with standard heatsink mounting.

Technical Context

This device employs a refined trench-gate structure to minimize R_DS(on) while maintaining fast switching performance: t_d(on) = 28 ns, t_f = 95 ns, and Q_gd = 75.2 nC support high-frequency synchronous rectification and PWM control up to 200 kHz.

Its SOA is limited by R_DS(on) in the linear region, with pulse capability up to 640 A (IDM) and safe operation at T_j ≤ 175 °C. The integrated body diode exhibits V_SD = 1.1 V at 160 A and t_rr = 58.7 ns under defined inductive load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 36–48 V nominal DC bus applications with margin against transients
R_DS(on) max	2.2 mΩ - enables <1.8 W conduction loss at 160 A, reducing heatsink requirements
I_D cont @ T_C=25°C	160 A - rated for high-current output stages in industrial SMPS and BLDC inverters
E_AS	1100 mJ - withstands unclamped inductive switching events without failure
Q_g	240 nC - lowers gate drive power loss and simplifies driver selection for 12 V logic-level control
R_thj-case	0.44 °C/W - allows direct mounting to heatsinks for thermal management in compact enclosures
V_GS(th)	2–4 V - ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO

Pinout & Package

STP318N4F6 uses a TO-220 type A package with isolated tab (drain-connected). Mounting hole Ø3.75–3.85 mm; tab thickness 1.23–1.32 mm; lead pitch 2.54 mm. Tab is electrically connected to Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Main high-side current path; thermally coupled to case for heatsinking
G (Pin 1)	Gate	Control terminal requiring <240 nC charge for full enhancement
S (Pin 3)	Source	Reference node for gate drive; connects to low-side return path

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.7 mΩ typ. at V_GS = 10 V reduces I²R losses in high-current 48 V systems
Low gate charge	240 nC total charge minimizes driver power dissipation and EMI during switching
High avalanche ruggedness	1100 mJ single-pulse rating enables reliable operation in inductive load switching
Robust thermal performance	0.44 °C/W junction-to-case resistance supports >100 W continuous power dissipation
Enhanced body diode	58.7 ns reverse recovery time and 99.2 nC Q_rr reduce switching losses in synchronous rectifiers

Applications

Server PSU Output Stage

Industrial BLDC Inverter Phase Leg

Use Scenario: High-efficiency 48 V output stage in 1U server power supplies handling >1 kW load.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter.

Use Value: 1.7 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 3.5 mΩ devices, improving efficiency at 160 A peak.

Use Scenario: Upper/lower switch in 3-phase inverter driving 5–10 kW industrial BLDC motors.

IC Role / Device Role / Timing Role: High-current phase-leg switch operating at 10–20 kHz PWM frequency.

Use Value: 1100 mJ E_AS prevents failure during motor stall or short-circuit events without external snubbers.

Telecom Rectifier Module

EV Onboard Charger DC-DC Stage

Use Scenario: 48 V telecom rectifier module converting -48 V input to 12 V/24 V auxiliary rails.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or LLC resonant converter.

Use Value: 240 nC Q_g enables efficient gate drive with low-cost 12 V drivers, reducing BOM cost vs. high-Q_g alternatives.

Use Scenario: Isolated DC-DC stage in bidirectional OBC converting 400 V battery to 48 V LV network.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped or full-bridge topology.

Use Value: 1.1 V V_SD and 58.7 ns t_rr minimize body diode conduction loss and reverse recovery spikes during light-load ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ (higher), Q_g = 191 nC (lower), E_AS = 520 mJ (lower)	Less suitable for high-current 48 V systems due to higher conduction loss and lower avalanche margin	Select when gate drive voltage is limited to 5 V and avalanche stress is minimal
IXTH160N04S2	R_DS(on) = 1.6 mΩ (similar), Q_g = 320 nC (higher), TO-247 package (larger footprint)	Requires larger PCB area and more complex heatsinking; better for >200 A designs	Select when higher current derating or extended SOA at elevated temperature is required

Compared with IRF1404PBF and IXTH160N04S2, STP318N4F6 offers optimal balance of ultra-low R_DS(on), moderate gate charge, and TO-220 manufacturability - making it preferred for space-constrained, high-efficiency 160 A switching nodes where thermal and avalanche robustness are critical.

Availability

STP318N4F6 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard charger DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for STP318N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

STP318N4F6 belongs to the STripFET™ F6 power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial and computing power conversion systems.

FAQ

Is STP318N4F6 suitable for 3.3 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, ensuring reliable turn-on with 3.3 V microcontroller outputs. However, full enhancement to achieve 1.7 mΩ R_DS(on) requires V_GS ≥ 10 V; use level-shifting or gate driver ICs for optimal conduction performance.

What is the maximum continuous power dissipation at T_C = 100 °C?

At T_C = 100 °C, the device maintains 160 A continuous drain current per datasheet Table 1. With R_DS(on) = 2.2 mΩ max, P_D = I²R = (160 A)² × 0.0022 Ω = 56.3 W. Derating follows R_thj-case = 0.44 °C/W, so junction temperature remains within 175 °C limit if case temperature is held ≤ 100 °C.

Does STP318N4F6 have avalanche-rated operation in repetitive mode?

No - the 1100 mJ E_AS rating applies only to single-pulse avalanche events starting from T_j = 25 °C. Repetitive avalanche is not characterized or guaranteed; system design must avoid repeated unclamped inductive switching to prevent cumulative junction damage.

Can the TO-220 tab be electrically isolated from the PCB ground plane?

No - the metal tab is internally connected to the Drain (D) terminal. To isolate it from the PCB ground, use an insulating washer and shoulder washer with non-conductive screw hardware, and verify creepage/clearance meets safety standards for the target application voltage class.

STP318N4F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13800000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP318N4F6 FAQ

1.How can I place an order for STP318N4F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP318N4F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP318N4F6 reliable?

The price and inventory of STP318N4F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP318N4F6 is usually 5 days.

3.What payment methods are accepted for STP318N4F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP318N4F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP318N4F6?

STP318N4F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP318N4F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP318N4F6?

For technical support, including STP318N4F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP318N4F6 requirements.

6.How does Aetrix verify that STP318N4F6 is sourced from the original manufacturer or authorized distributors?

All STP318N4F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP318N4F6 meets industry standards.

7.What is the process for return or replacement of STP318N4F6?

All STP318N4F6 units undergo pre-shipment inspection (PSI). If there is an issue with STP318N4F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP318N4F6 part is unused and in its original packaging.

Return procedure for STP318N4F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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