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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP31N65M5

Name: STP31N65M5
Brand: STMicroelectronics
SKU: STP31N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP31N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP31N65M5.pdf

Description:: MOSFET N-CH 650V 22A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP31N65M5 from STMicroelectronics is an N-channel 650 V, 148 mΩ max, 22 A Power MOSFET in TO-220 package, based on MDmesh M5 vertical process technology. It delivers extremely low R_DS(on), high avalanche ruggedness (5 A repetitive), and fast switching (t_d(v) = 46 ns) for high-efficiency AC-DC power supplies and industrial motor drives.

For engineers reviewing the STP31N65M5 datasheet, STP31N65M5 pinout, STP31N65M5 application, or STP31N65M5 equivalent, key selection criteria include its 650 V breakdown voltage, 148 mΩ R_DS(on) at 10 V_GS, 150 W power dissipation, 100% avalanche tested reliability, and gate charge of 45 nC - all critical for hard-switched PFC and SMPS designs.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture, combining vertical charge compensation with PowerMESH layout to achieve 124 mΩ typ. R_DS(on) at 650 V rating. Its optimized capacitance profile (C_iss = 1865 pF, C_rss = 4.2 pF) enables high dv/dt ruggedness (50 V/ns) and low switching losses in continuous conduction mode (CCM) PFC stages.

The device integrates a robust body diode with 336 ns reverse recovery time (T_j = 25 °C) and 5 µC Q_rr, supporting ZVS-capable topologies. Thermal resistance R_thJC is 4.17 °C/W in TO-220, enabling stable operation up to 150 °C junction temperature under forced-air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands full-line surge in 400 VAC input PFC circuits without clamping.
R_DS(on) max	148 mΩ @ V_GS = 10 V, I_D = 11 A - Enables <1.5 W conduction loss at 22 A DC, reducing heatsink size.
Q_g	45 nC - Low gate drive power requirement supports 100–300 kHz operation with standard gate drivers.
E_AS	410 mJ - Confirmed single-pulse avalanche energy allows reliable unclamped inductive switching in flyback/LLC.
t_r	8 ns - Fast voltage rise time minimizes overlap loss during turn-on in hard-switched converters.
R_thJC	4.17 °C/W - Enables 150 °C T_j operation with ≤30 °C case rise at 150 W dissipation in TO-220 mounting.
I_D (T_C = 100 °C)	13.9 A - Sustains continuous current in enclosed industrial enclosures without derating below 100 °C ambient.

Pinout & Package

STP31N65M5 uses the TO-220 package with isolated tab (non-conductive mounting option). The plastic body provides creepage/clearance compliant with IEC 62368-1 for primary-side isolation.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; 2.8 Ω intrinsic gate resistance limits ringing.
2 (D)	Drain	Main high-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless using insulating pad.
3 (S)	Source	Power return path and gate reference; ties to PCB ground plane; source inductance directly impacts switching speed and EMI.

Key Features

Feature	Design Value
MDmesh M5 silicon process	Enables 650 V rating with 124 mΩ typ. R_DS(on), reducing conduction loss by >25% vs. prior-generation superjunction MOSFETs.
100% avalanche tested	Guarantees minimum 410 mJ single-pulse avalanche energy per unit, eliminating need for external snubbers in flyback designs.
Low Q_gd/Q_gs ratio	20 nC / 11.5 nC = 1.74 - Improves Miller immunity and enables faster, more predictable turn-off in high-dv/dt environments.
Optimized body diode	336 ns t_rr and 30 A I_RRM support quasi-resonant operation without external diode replacement in LLC resonant converters.
ECOPACK® compliance	Meets RoHS and REACH requirements; halogen-free molding compound suitable for industrial and consumer-grade production.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase inverter stage in 1–3 kW variable frequency drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side N-channel switch in IGBT/MOSFET half-bridge; handles 22 A peak phase current with 650 V blocking.

Use Value: 148 mΩ R_DS(on) reduces conduction loss by 1.2 W per switch vs. 180 mΩ alternatives, lowering thermal stress on aluminum heatsinks.

Use Scenario: Active clamp forward or asymmetrical half-bridge in 1–2 kW telecom rectifiers with 48 V output.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch; operates in hard-switched mode with 400 V bus and 100–200 kHz switching.

Use Value: 45 nC total gate charge enables clean 10 ns rise/fall edges using UCC27324 driver, minimizing dead-time losses and EMI generation.

EV Onboard Charger (OBC)

Industrial UPS Systems

Use Scenario: Boost PFC stage in bi-directional 6.6 kW OBC handling 240 VAC input and 400–800 VDC battery interface.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter; conducts 22 A RMS at 100 kHz.

Use Value: 124 mΩ typ. R_DS(on) and 50 V/ns dv/dt ruggedness ensure stable operation across full input voltage range without false triggering.

Use Scenario: Inverter output stage in 3 kVA double-conversion UPS delivering pure sine wave to sensitive medical equipment.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage; commutates 13.9 A continuous current at 50/60 Hz fundamental with high-frequency PWM overlay.

Use Value: 150 W power dissipation rating and -55 to +150 °C T_j range support extended runtime under overload conditions without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW31N65M5	Same die, TO-247 package; R_thJC = 0.83 °C/W vs. 4.17 °C/W; 88 A pulsed current rating.	Better thermal performance in high-power (>500 W) open-frame PSUs; requires larger PCB footprint and mechanical mounting.	Select when thermal budget is constrained and heatsink mass is limited; avoid in space-constrained TO-220 footprints.
IPP65R190C7	Infineon CoolMOS C7; 190 mΩ R_DS(on); lower Q_g (34 nC); higher C_oss (65 pF).	Superior light-load efficiency in DCM/QR flyback; less suitable for CCM PFC due to higher conduction loss.	Prefer for adapter-level SMPS where gate drive loss dominates; avoid where 22 A continuous current demands lowest R_DS(on).

Compared with STP31N65M5, STW31N65M5 offers superior thermal capability but requires TO-247 layout changes, while IPP65R190C7 trades conduction loss for gate drive efficiency - making STP31N65M5 optimal for cost-sensitive, medium-power CCM PFC and industrial inverters requiring proven avalanche robustness.

Availability

STP31N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP31N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP31N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including CCM PFC, solar inverters, and industrial SMPS where low R_DS(on) and avalanche ruggedness are critical.

FAQ

What is the maximum gate-source voltage rating for STP31N65M5?

The absolute maximum V_GS is ±25 V, as specified in Table 1 of DS8912 Rev 5. Operation beyond this risks permanent gate oxide damage. Recommended drive is 0 V to +10 V for full enhancement and -5 V to 0 V for fast, controlled turn-off to suppress spurious conduction.

Does STP31N65M5 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic source-drain body diode rated for 22 A continuous and 88 A pulsed current. Key parameters include 1.5 V forward voltage at 22 A, 336 ns reverse recovery time (T_j = 25 °C), and 5 µC reverse recovery charge - verified per Figure 13 and Table 7 in the datasheet.

Can STP31N65M5 be used in avalanche mode, and what is its rated energy?

Yes - it is 100% avalanche tested per datasheet Section 3. Single-pulse avalanche energy E_AS is 410 mJ at T_j = 25 °C with I_AR = 5 A and V_DD = 50 V. Repetitive avalanche is not rated; design must limit pulse repetition to maintain T_j ≤ 150 °C.

What is the thermal resistance from junction to case (R_thJC) for the TO-220 package?

R_thJC is 4.17 °C/W for STP31N65M5 in TO-220 package, as listed in Table 2 of DS8912 Rev 5. This value assumes direct mounting to a flat, bare copper heatsink with thermal interface material; PCB copper area has negligible effect on R_thJC.

STP31N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 148mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 816 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP31N65M5 FAQ

1.How can I place an order for STP31N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP31N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP31N65M5 reliable?

The price and inventory of STP31N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP31N65M5 is usually 5 days.

3.What payment methods are accepted for STP31N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP31N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP31N65M5?

STP31N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP31N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP31N65M5?

For technical support, including STP31N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP31N65M5 requirements.

6.How does Aetrix verify that STP31N65M5 is sourced from the original manufacturer or authorized distributors?

All STP31N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP31N65M5 meets industry standards.

7.What is the process for return or replacement of STP31N65M5?

All STP31N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP31N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP31N65M5 part is unused and in its original packaging.

Return procedure for STP31N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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