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STMicroelectronics STP32NM50N
- Part No.:
- STP32NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP32NM50N.pdf
- Description:
- MOSFET N CH 500V 22A TO-220
- Quantity:
- Payment:
- Shipping:
Inventory:97
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Product details
Overview
STP32NM50N from STMicroelectronics is an N-channel 500 V, 100 mΩ typ. (130 mΩ max.), 22 A MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency hard-switched and resonant SMPS topologies including PFC and LLC converters. It features low gate charge (62.5 nC), low input capacitance (1973 pF), and 100% avalanche tested ruggedness.
For engineers reviewing the STP32NM50N datasheet, STP32NM50N pinout, STP32NM50N application, or STP32NM50N equivalent, key selection criteria include RDS(on) stability over temperature, diode reverse recovery performance (Qrr = 5–6.5 µC), safe operating area at 250 V/11 A, and thermal resistance (RthJC = 0.66 °C/W) for high-power conduction.
Technical Context
This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its 500 V VDS rating with 100 mΩ typical on-resistance enables operation in universal-input 80+ Gold PSUs and industrial 400 V DC bus systems.
The MOSFET integrates a fast, low-Qrr body diode (trr = 328–392 ns, IRRM = 30.5–32.8 A) and supports unclamped inductive switching with 340 mJ single-pulse avalanche energy - critical for ZVS/ZCS soft-switching reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports 400 V DC bus with 25% margin for voltage transients in industrial and telecom power supplies. |
| RDS(on) max | 130 mΩ @ VGS = 10 V, ID = 11 A - Enables <1.43 W conduction loss at 11 A, reducing heatsink requirements. |
| Qg | 62.5 nC - Low gate drive power demand; compatible with standard 1-A peak gate drivers at 100–300 kHz. |
| Ciss | 1973 pF @ VDS = 50 V - Predictable Miller effect; supports stable gate control in high-dv/dt environments (15 V/ns). |
| EAS | 340 mJ - Confirmed single-pulse avalanche capability ensures robustness during startup, overload, or short-circuit events. |
| RthJC | 0.66 °C/W - Enables >150 W continuous dissipation with modest heatsinking (e.g., 1°C/W sink yields TJ ≈ 110°C @ 190 W). |
| trr | 328 ns @ TJ = 25°C - Reduces switching loss and EMI in bridge-leg configurations by limiting diode reverse recovery tail current. |
Pinout & Package
STP32NM50N is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting in most applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level drive; 3.8 Ω intrinsic gate resistance limits ringing and simplifies RC snubber design. |
| 2 (Drain) | High-side power path | Connected to TO-247 metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 3 (Source) | Power return / reference node | Serves as local ground for gate driver; low-inductance PCB layout essential to minimize VGS noise during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical strip structure | Delivers industry-leading RDS(on) × Qg figure-of-merit (130 mΩ × 62.5 nC = 8.13 Ω·nC) for high-frequency efficiency. |
| 100% avalanche tested | Guarantees minimum 340 mJ single-pulse energy handling - eliminates need for external clamping in many flyback/PFC designs. |
| Low Coss eq. (325 pF) | Reduces turn-off loss and improves ZVS initiation in resonant converters operating above 200 kHz. |
| Fast body diode (Qrr = 5 µC) | Minimizes cross-conduction loss and EMI in synchronous rectification and half-bridge topologies. |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements without compromising thermal or electrical performance. |
Applications
| Server PSU | Industrial Motor Drive |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW active-clamp forward or LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage, high-current main power switch with precise timing control of ZVS transitions. Use Value: 100 mΩ RDS(on) and 62.5 nC Qg enable >96% full-load efficiency while maintaining <110 ns td(off) for tight dead-time control. |
Use Scenario: Inverter leg switch in 7.5–15 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase bridge, handling 22 A continuous at 100 °C case temperature. Use Value: 0.66 °C/W RthJC and 150 °C TJmax support sustained operation under 13.86 A derated current without forced air cooling. |
| Telecom Rectifier | Renewable Energy Inverter |
|
Use Scenario: Boost PFC stage in 2–5 kW telecom rectifiers with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 500 V DC link. Use Value: 15 V/ns dv/dt immunity and 328 ns diode trr suppress voltage overshoot and reduce snubber losses in high-frequency boost stages. |
Use Scenario: DC-link switch in string inverters for solar PV systems with 600–1000 V DC input. IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge output stage, exposed to repetitive surge currents. Use Value: 340 mJ EAS and 7 A IAR ensure survivability during grid fault conditions and lightning-induced transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW32NM50N | Identical die, same RDS(on), Qg, and SOA - differs only in TO-247 packaging (tube vs. STP's tape-and-reel variant). | No functional difference; STW32NM50N is tube-packed for prototyping; STP32NM50N optimized for SMT assembly lines. | Select STP32NM50N for automated pick-and-place; STW32NM50N for lab evaluation or low-volume builds. |
| IPP60R190C7 | 650 V rating, 190 mΩ RDS(on), 43 nC Qg; CoolMOS™ C7 technology with lower Coss but higher conduction loss. | Better suited for 600 V DC bus systems; less optimal for 400 V systems due to higher RDS(on). | Choose IPP60R190C7 only when 650 V rating or lower switching loss at light load is mandatory. |
Compared with STW32NM50N, STP32NM50N offers identical electrical performance with tape-and-reel packaging for production throughput; versus IPP60R190C7, it delivers 40% lower conduction loss at 400 V bus but requires stricter gate drive design due to higher Qg.
Availability
STP32NM50N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STP32NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.
STP32NM50N belongs to the MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and computing infrastructure.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current (ID) is 13.86 A at TC = 100 °C, as specified in Table 1 of DS9167 Rev 2. This derating reflects thermal limits of the TO-247 package and ensures junction temperature remains ≤150 °C under steady-state conduction with proper heatsinking.
Is the body diode suitable for synchronous rectification?
No - the integrated body diode has trr = 328–392 ns and Qrr = 5–6.5 µC, making it unsuitable for high-frequency synchronous rectification. External Schottky or GaN FETs are recommended for that function; this MOSFET is intended for primary-side switching only.
Does STP32NM50N require a negative gate turn-off voltage?
No - the device specifies ±25 V gate-source voltage rating, but gate drive is typically 0 V (off) and +10 V (on). A negative turn-off voltage is not required; however, a small negative bias (e.g., –5 V) may improve noise immunity in high-dv/dt environments per application note AN437.
How does its avalanche rating compare to STB32NM50N?
Both STP32NM50N and STB32NM50N share identical die and avalanche specifications: 7 A IAR and 340 mJ EAS. The difference lies solely in packaging (TO-247 vs. D²PAK) and packing method - not in ruggedness or SOA performance.
STP32NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1973 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP32NM50N FAQ
1.How can I place an order for STP32NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STP32NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP32NM50N reliable?
The price and inventory of STP32NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP32NM50N is usually 5 days.
3.What payment methods are accepted for STP32NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP32NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP32NM50N?
STP32NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP32NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP32NM50N?
For technical support, including STP32NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP32NM50N requirements.
6.How does Aetrix verify that STP32NM50N is sourced from the original manufacturer or authorized distributors?
All STP32NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP32NM50N meets industry standards.
7.What is the process for return or replacement of STP32NM50N?
All STP32NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STP32NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP32NM50N part is unused and in its original packaging.
Return procedure for STP32NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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