STMicroelectronics STP33N60DM6

Overview

STP33N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh™ DM6 series, featuring 600 V V_DS, 115 mΩ typ. R_DS(on) at V_GS = 10 V, 25 A continuous drain current (T_C = 25 °C), fast-recovery body diode (t_rr = 105 ns, Q_rr = 0.47 µC), and 100% avalanche tested. It targets ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STP33N60DM6 datasheet, STP33N60DM6 pinout, STP33N60DM6 application, or STP33N60DM6 equivalent, key selection criteria include its low Q_g (35 nC), high dv/dt ruggedness (100 V/ns), Zener-protected gate, TO-220 package with isolated tab, and optimized R_DS(on)/area for high-power SMPS designs.

Technical Context

This device implements ST's MDmesh DM6 silicon architecture, engineered to minimize reverse recovery charge (Q_rr) and switching losses while maintaining robust avalanche capability. Its fast-recovery body diode enables hard-switched and resonant topologies without external anti-parallel diodes in many cases.

The MOSFET features a Zener-protected gate structure, intrinsic gate resistance of 1.8 Ω, and C_oss,eq = 225 pF (0–480 V), supporting stable operation under high dv/dt stress. Thermal resistance junction-to-case is 0.66 °C/W, enabling high-power dissipation with standard heatsinking.

Key Specifications

Pinout & Package

TO-220 type A package with isolated metal tab (drain-connected), 3-pin configuration. Tab is electrically connected to drain (D) and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and IXFH32N60X3, STP33N60DM6 delivers superior body-diode performance and integrated gate protection in a compact TO-220 form factor-making it optimal for cost-sensitive, high-density ZVS and phase-shifted topologies where diode conduction and layout simplicity are critical.

Availability

STP33N60DM6 is available at Aetrix Electronics and suitable for server power supplies, industrial motor inverters, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-lifecycle support.

Supply support for STP33N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ DM6 high-voltage Power MOSFET product line, engineered specifically for ultra-efficient, high-frequency switched-mode power supplies and resonant converters demanding low Q_rr, high dv/dt immunity, and avalanche robustness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP33N60DM6 supports 16 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12878 Rev 3. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Is the drain tab electrically isolated from the package mount surface?

Yes-the TO-220 type A package uses an isolated tab design where the metal tab is internally connected only to the drain (D) terminal and is insulated from the mounting surface. Electrical isolation must be maintained between tab and heatsink unless system grounding explicitly requires drain-to-chassis connection.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No-STP33N60DM6 has a gate threshold voltage (V_GS(th)) of 3.25–4.75 V and is fully enhanced at V_GS = 10 V. Negative gate bias is not required; however, driving to 0 V (not floating) is essential to prevent unintended turn-on due to Miller coupling in high-dv/dt environments.

Can it replace older STP36N60M2 devices in existing designs?

Yes-with caveats: STP33N60DM6 offers lower R_DS(on) (115 mΩ vs. 135 mΩ), faster diode recovery (t_rr = 105 ns vs. 220 ns), and improved dv/dt ruggedness. Layout and gate drive remain compatible, but thermal design should verify junction temperature given higher current density and identical package thermal resistance.