STMicroelectronics STP33N60M2

Overview

STP33N60M2 from STMicroelectronics is an N-channel 600 V, 108 mΩ typ., 26 A Power MOSFET using MDmesh M2 technology in TO-220 package. It delivers low gate charge (45.5 nC), optimized Coss profile (85 pF), and 100% avalanche-tested ruggedness for high-efficiency switching in hard-switched and resonant topologies. Used in industrial AC-DC front-ends and LLC converters operating at 100–300 kHz.

For engineers reviewing the STP33N60M2 datasheet, STP33N60M2 pinout, STP33N60M2 application, or STP33N60M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (RthJC = 3.6 °C/W in TO-220FP variant).

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its Zener-protected gate enables robust ESD immunity (±25 V VGS rating), while the integrated body diode features low Qrr (5.6 µC) and fast trr (375 ns) at 26 A.

The device operates with a gate threshold voltage of 2–4 V and exhibits stable RDS(on) up to 150 °C junction temperature. Its safe operating area (SOA) is defined by both thermal limits and peak current constraints, supporting single-pulse avalanche energy of 450 mJ at TJ = 25 °C.

Key Specifications

Pinout & Package

STP33N60M2 is supplied in TO-220 package with isolated tab (Type A). The metal tab is electrically connected to the drain terminal and serves as primary heat dissipation path. Mounting requires insulating washer or thermal pad when heatsink is grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW33N60M2, STP33N60M2 trades thermal performance for compact TO-220 mounting and lower cost; versus IPP60R190C7, it offers guaranteed avalanche survivability at the expense of slightly higher conduction loss and gate charge.

Availability

STP33N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC front-ends, LLC resonant converters, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STP33N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STP33N60M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power supplies and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID at TC = 100 °C is 16 A, as specified in Table 1 of DS9497. This rating reflects thermal limitation-not SOA-so operation above this current requires forced cooling or pulse-width derating per the SOA curves in Figures 1–5.

Does STP33N60M2 have a built-in body diode, and what are its key recovery parameters?

Yes, it integrates a fast, Zener-protected body diode with ISD = 26 A continuous, trr = 375 ns (TJ = 25 °C), Qrr = 5.6 µC, and IRRM = 30 A. These values are measured under standardized inductive-load conditions (ISD = 26 A, di/dt = 100 A/µs, VDD = 60 V), enabling accurate loss modeling in bridge circuits.

Can STP33N60M2 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, STP33N60M2 is 100% avalanche tested and rated for single-pulse avalanche energy EAS = 450 mJ at TJ = 25 °C (ID = 5 A, VDD = 50 V). Repetitive avalanche is limited to IAR = 5 A, with pulse width constrained by junction temperature rise-refer to Figure 17 for EAS vs. TJ derating.

Is the TO-220 package tab electrically isolated, and how should it be mounted?

The TO-220 tab is electrically connected to the drain (pin 2) and is not isolated. When mounting to a grounded heatsink, use an insulating thermal pad (e.g., Sil-Pad 1500) or mica washer with silicone grease. Mechanical flatness tolerance is ±0.10 mm (per Table 10), requiring torque-controlled screw mounting at 0.5–0.6 N·m.