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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP33N60M6

Name: STP33N60M6
Brand: STMicroelectronics
SKU: STP33N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP33N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP33N60M6.pdf

Description:: MOSFET N-CH 600V 25A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP33N60M6 from STMicroelectronics is an N-channel 600 V, 25 A MDmesh M6 superjunction power MOSFET in TO-220 package, featuring 105 mΩ typ. R_DS(on), 33.4 nC total gate charge, and 100% avalanche tested. It delivers low conduction loss and high dv/dt ruggedness (50 V/ns) for high-efficiency switching in resonant and PFC topologies.

For engineers reviewing the STP33N60M6 datasheet, STP33N60M6 pinout, STP33N60M6 application, or STP33N60M6 equivalent, key selection criteria include its 600 V breakdown voltage, 125 mΩ max. R_DS(on) at 10 V_GS, 190 W power dissipation, Zener-protected gate, and optimized C_oss (128 pF) for soft-switching performance.

Technical Context

This MOSFET employs ST's MDmesh M6 silicon technology, achieving improved R_DS(on)/area over prior generations while maintaining robust switching behavior. Its 1.5 Ω intrinsic gate resistance and 7.2 nC Q_gs support fast, controllable turn-on with reduced drive loss.

The device integrates a Zener-protected gate structure and exhibits 500 mJ single-pulse avalanche energy (E_AS) at 50 V_DD. Its 269 pF C_oss,eq (0–480 V) and 265 ns t_rr at 25 A enable stable operation in LLC and boost PFC converters under hard- and soft-switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 400 V AC-input PFC stages with margin.
R_DS(on) max	125 mΩ at V_GS = 10 V, T_C = 25 °C - Enables <1.5 W conduction loss at 12.5 A continuous drain current.
I_D cont	25 A at T_C = 25 °C - Supports high-power 1–2 kW industrial or server PSU designs with heatsink cooling.
Q_g	33.4 nC - Low gate charge reduces driver power requirement and enables >100 kHz operation with standard gate drivers.
t_rr	265 ns at T_J = 25 °C - Minimizes diode recovery loss and EMI in synchronous rectification and resonant circuits.
E_AS	500 mJ - Ensures reliable unclamped inductive switching in LLC half-bridge primary-side operation.
R_thJC	0.66 °C/W - Allows direct thermal path to heatsink; junction-to-case temperature rise ≤125 °C at 190 W dissipation.

Pinout & Package

TO-220 package with isolated tab (drain-connected), 3-pin through-hole mounting. Standard Type A outline per DS12640 Rev 3, compliant with ECOPACK environmental specifications.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; 1.5 Ω intrinsic resistance enables predictable Miller plateau timing and low drive loss.
2 (TAB/D)	Drain (exposed tab)	High-voltage power output node; electrically connected to metal tab for low-inductance heat sinking and PCB thermal relief.
3 (S)	Source	Reference node for gate drive and current sensing; tied to source of external driver ICs and shunt resistors.

Key Features

Feature	Design Value
MDmesh M6 silicon technology	Delivers 15% lower R_DS(on)/area vs. M5 generation, reducing die size and cost without sacrificing ruggedness.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient gate-source stress, eliminating need for external clamping.
100% avalanche tested	Each unit validated for repetitive and non-repetitive avalanche capability, ensuring reliability in unclamped inductive loads.
Low C_oss,eq (269 pF)	Reduces stored output capacitance energy (E_OSS = 12 µJ at 400 V), enabling zero-voltage switching in LLC resonant converters.
Optimized diode recovery	3.07 µC Q_rr and 23.2 A I_RRM at 25 °C minimize reverse recovery loss and snubber stress in PFC boost diodes.

Applications

LLC Resonant Converter Primary Switch

Active Boost PFC Stage

Use Scenario: High-efficiency 1–3 kW server or telecom PSU using half-bridge LLC topology with 100–300 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full DC bus voltage and resonant current; operates in ZVS region.

Use Value: Low C_oss,eq and 265 ns t_rr ensure clean zero-voltage turn-on and minimal dead-time loss, improving efficiency by ≥0.5% at full load.

Use Scenario: Universal-input (90–264 V AC) active boost PFC front-end delivering 1.5–2.5 kW with THD <5%.

IC Role / Device Role / Timing Role: Main switching element controlling inductor current shape and regulating DC link voltage at ~400 V.

Use Value: 125 mΩ R_DS(on) and 190 W power rating sustain 25 A peak currents with <1.8 W conduction loss, supporting compact heatsink design.

Industrial Motor Drive Inverter Leg

High-Voltage DC-DC Isolated Converter

Use Scenario: 3-phase 400 V AC input VFD driving 5–7.5 kW induction motors with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 2-level inverter bridge; switched at 8–16 kHz with active gate control.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high dV/dt commutation events, eliminating need for negative gate bias.

Use Scenario: 48 V to 380 V isolated DC-DC converter for energy storage systems using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switch managing 380 V reflected output voltage and high peak currents in transformer primary winding.

Use Value: 600 V V_DS rating provides 20% margin above 380 V bus, while 500 mJ E_AS ensures fault tolerance during short-circuit transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 190 mΩ R_DS(on), 30 A, CoolMOS C7 - higher R_DS(on), lower Q_g (27 nC), no integrated Zener.	Better light-load efficiency in DCM PFC; requires external gate protection and tighter layout for dv/dt immunity.	Select when prioritizing gate drive simplicity and lowest Q_g over conduction loss at >15 A load.
STW33N60M6	Identical silicon and specs, but in TO-247 package - same R_DS(on), Q_g, and avalanche rating; 0.35 °C/W R_thJC.	Higher power density and thermal headroom for >2.5 kW designs; requires larger PCB footprint and different mounting hardware.	Select when thermal budget exceeds TO-220 capability or board space allows TO-247 mechanical integration.

Compared with IPP60R190C7, STP33N60M6 offers 15% lower conduction loss and built-in gate protection at the cost of 24% higher Q_g; versus STW33N60M6, it trades 47% higher thermal resistance for lower assembly cost and TO-220 compatibility in space-constrained 1–2 kW systems.

Availability

STP33N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, active boost PFC stages, and industrial motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP33N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP33N60M6 belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies including server PSUs, telecom rectifiers, and industrial PFC modules.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP33N60M6 supports 15.8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12640 Rev 3. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does STP33N60M6 require external gate protection?

No - the device integrates a Zener diode between gate and source, rated for ±25 V, eliminating the need for external gate clamp components. This simplifies gate drive design and improves system robustness against ESD and transient overvoltage events.

How does the 269 pF C_oss,eq value impact LLC resonant converter design?

The 269 pF C_oss,eq (0–480 V) directly determines the energy stored in output capacitance (E_OSS ≈ ½·C_oss,eq·V²). At 400 V, this yields ~12 µJ, enabling reliable zero-voltage switching down to ~150 kHz in typical LLC designs without excessive dead-time penalty.

Is STP33N60M6 suitable for use in synchronous rectification?

No - STP33N60M6 is an N-channel high-side switching MOSFET optimized for primary-side hard/soft switching, not secondary-side synchronous rectification. Its body diode t_rr and Q_rr are not optimized for low-loss freewheeling; dedicated SR controllers and logic-level FETs are recommended for that role.

STP33N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.4 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1515 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP33N60M6 FAQ

1.How can I place an order for STP33N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP33N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP33N60M6 reliable?

The price and inventory of STP33N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP33N60M6 is usually 5 days.

3.What payment methods are accepted for STP33N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP33N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP33N60M6?

STP33N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP33N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP33N60M6?

For technical support, including STP33N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP33N60M6 requirements.

6.How does Aetrix verify that STP33N60M6 is sourced from the original manufacturer or authorized distributors?

All STP33N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP33N60M6 meets industry standards.

7.What is the process for return or replacement of STP33N60M6?

All STP33N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STP33N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP33N60M6 part is unused and in its original packaging.

Return procedure for STP33N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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