STMicroelectronics STP33N65M2

Overview

STP33N65M2 from STMicroelectronics is an N-channel 650 V, 117 mΩ typ. (140 mΩ max), 24 A MDmesh™ M2 Power MOSFET optimized for high-efficiency hard-switching and resonant converters. It features extremely low gate charge (41.5 nC), excellent Coss profile (75 pF), 100% avalanche tested operation, and Zener-protected gate. Used in PFC stages of industrial SMPS and telecom rectifiers where high-voltage blocking and fast switching coexist.

For engineers reviewing the STP33N65M2 datasheet, STP33N65M2 pinout, STP33N65M2 application, or STP33N65M2 equivalent, this device supports critical design decisions in high-voltage AC-DC conversion, flyback and LLC resonant topologies, and energy-efficient server power supplies requiring rugged 650 V operation with low conduction and switching losses.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) while maintaining high dv/dt ruggedness (50 V/ns) and robust unclamped inductive switching capability. Its Coss eq. of 380 pF enables predictable turn-off energy management in high-frequency converters.

The device integrates a fast, soft-recovery body diode (t_rr = 426 ns at 25 °C, Q_rr = 7 µC) and operates up to 150 °C junction temperature. Gate threshold voltage (2–4 V) ensures stable enhancement-mode control across temperature, and ±25 V V_GS rating supports robust gate drive design.

Key Specifications

Pinout & Package

STP33N65M2 is offered in TO-220FP package (plastic, full-pack, isolated tab). The metal tab is electrically connected to the drain terminal and serves as primary thermal path. Mounting requires insulating hardware unless drain is referenced to heatsink potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW33N65M2, STP33N65M2 trades thermal performance for compact footprint and cost; versus IPP65R190CFD7, it delivers lower conduction loss at the expense of diode speed-making it ideal for high-current, medium-frequency PFC rather than ultra-high-frequency ZVS designs.

Availability

STP33N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and EV charger auxiliary power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP33N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP33N65M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial and telecom infrastructure where 650 V blocking and low switching loss are essential.

FAQ

What is the maximum continuous drain current for STP33N65M2 at 100 °C case temperature?

The maximum continuous drain current (I_D) is 15 A at T_C = 100 °C, as specified in Table 1 of DS10776 Rev 2. This derating from 24 A (at 25 °C) reflects thermal limitations of the TO-220FP package, which has R_thJC = 3.68 °C/W. Designers must verify heatsink interface resistance and ambient airflow to maintain safe junction temperature below 150 °C.

Does STP33N65M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STP33N65M2 includes a monolithic source-drain body diode. At T_J = 25 °C, its reverse recovery time (t_rr) is 426 ns, reverse recovery charge (Q_rr) is 7 µC, and peak reverse recovery current (I_RRM) is 33.5 A, measured under ISD = 24 A, di/dt = 100 A/µs, and V_DD = 60 V. These values increase at elevated temperature (e.g., t_rr = 544 ns at 150 °C).

Can STP33N65M2 be used in avalanche mode, and what is its rated avalanche energy?

Yes-STP33N65M2 is 100% avalanche tested per datasheet. Its single-pulse avalanche energy (E_AS) is 780 mJ at starting T_J = 25 °C, with I_AR = 2.5 A and V_DD = 50 V. Repetitive avalanche current is also rated at 2.5 A, but pulse width is limited by SOA constraints. Operation beyond these limits risks permanent degradation.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 2 V to 4 V at T_C = 25 °C (Table 4). As shown in Figure 11, it decreases with rising junction temperature-normalized to ~0.7× at T_J = 125 °C-ensuring stable turn-on behavior across the full –55 °C to 150 °C operating range without unintended conduction drift.