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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP34N65M5

Name: STP34N65M5
Brand: STMicroelectronics
SKU: STP34N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP34N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP34N65M5.pdf

Description:: MOSFET N-CH 650V 28A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP34N65M5 from STMicroelectronics is an N-channel 650 V, 90 mΩ typ. (110 mΩ max), 28 A MDmesh M5 Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and resonant topologies in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STP34N65M5 datasheet, STP34N65M5 pinout, STP34N65M5 application, or STP34N65M5 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 150 °C max junction temperature, 100% avalanche tested rating, and low 62.5 °C/W R_thJA on standard PCB - critical for thermal reliability in compact power designs.

Technical Context

This device implements ST's MDmesh M5 vertical superjunction process with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high V_DSS and robust dv/dt immunity. Its gate threshold voltage (3–5 V) enables direct drive from 5 V controllers without level-shifting.

The integrated body diode features 350 ns reverse recovery time (T_J = 25 °C) and 5.6 µC Q_rr, supporting ZVS operation in LLC converters and reducing EMI in high-frequency PFC. The 62.5 nC total gate charge supports efficient switching at 100–300 kHz with moderate gate driver strength.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V AC input systems with ≥20% margin against line surges and transient overvoltage.
R_DS(on) max	110 mΩ at V_GS = 10 V, I_D = 14 A - enables <1.5 W conduction loss at 14 A, critical for >96% efficiency in 1–3 kW PFC stages.
I_D (T_C = 25 °C)	28 A - defines maximum continuous current under ideal heatsinking; derates to 17.7 A at T_C = 100 °C per SOA limits.
dv/dt ruggedness	50 V/ns - ensures reliable operation during fast voltage transients in bridge-leg configurations without spurious turn-on.
E_AS	510 mJ - guarantees single-pulse unclamped inductive switching survival up to 7 A, simplifying snubber design in flyback and forward converters.
Q_g	62.5 nC - determines gate driver power requirement (~1.25 mW @ 100 kHz, 10 V swing); compatible with common 1–2 A peak drivers.
R_thJC	0.66 °C/W - enables precise junction temperature estimation when mounted on heatsink; allows 120 °C ΔT at 190 W dissipation.

Pinout & Package

STP34N65M5 uses a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires ≤100 nF local bypass and series resistance (4.7 Ω typical) to damp ringing and limit peak current.
2 (Middle)	Drain (D)	Main high-voltage power path; connected to metal tab - must be electrically isolated from heatsink unless referenced to same potential.
3 (Right)	Source (S)	Power return node; serves as reference for gate drive and current sensing; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Delivers 90 mΩ typ. R_DS(on) at 650 V - 30% lower than prior-generation MDmesh M2 devices, directly improving conduction efficiency.
100% avalanche tested	Each unit validated for 510 mJ single-pulse energy - eliminates need for external clamping in inductive load circuits like motor drives.
50 V/ns dv/dt ruggedness	Guaranteed immunity to false triggering during rapid voltage transitions in half-bridge and full-bridge topologies.
Low Q_gd/Q_gs ratio	28 nC / 17 nC = 1.65 - reduces Miller plateau duration and improves controllability during hard switching.
Enhanced body diode softness	Q_rr = 5.6 µC with 32 A I_RRM - minimizes voltage overshoot and EMI during diode commutation in ZVS designs.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–2 kW LLC resonant DC-DC converters powering server motherboards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz with zero-voltage switching.

Use Value: 90 mΩ R_DS(on) and 62.5 nC Q_g enable >97% conversion efficiency while maintaining thermal headroom on standard heatsinks.

Use Scenario: Active clamp forward converter in 48 V telecom rectifier modules handling 3 kW output.

IC Role / Device Role / Timing Role: Main power switch in primary side, driven by UC3875-based controller with programmable dead-time.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during clamp capacitor discharge, eliminating gate driver protection circuitry.

Solar Photovoltaic Inverters

Induction Heating Systems

Use Scenario: Boost stage switch in string inverters converting 600–1000 V DC to 800 V DC bus for three-phase inverter stage.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in continuous conduction mode (CCM) PFC topology.

Use Value: 650 V V_DSS with 20% margin over 800 V bus ensures long-term reliability under grid overvoltage conditions per IEC 62109.

Use Scenario: Half-bridge leg switch in 5–10 kW induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch subjected to repetitive unclamped inductive energy during coil current reversal.

Use Value: 510 mJ E_AS rating eliminates need for external RCD snubbers, reducing BOM count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB34N65M5	D²PAK (TO-263) package; 0.66 °C/W R_thJC identical, but R_thJA = 30 °C/W (vs. 62.5 °C/W) due to larger copper area.	Better thermal performance on PCB; unsuitable for through-hole assembly or legacy TO-220 footprints.	Select when surface-mount assembly and superior PCB-level thermal management are prioritized over mechanical mounting flexibility.
IPP65R099C7	Infineon CoolMOS C7; 99 mΩ R_DS(on), 650 V, Q_g = 53 nC, but only 30 V/ns dv/dt rating and no 100% avalanche test guarantee.	Limited ruggedness in high-dv/dt bridge applications; requires stronger gate drive and snubbing for same reliability.	Choose for cost-sensitive, lower-stress topologies where gate drive power reduction outweighs dv/dt margin requirements.

Compared with STB34N65M5 and IPP65R099C7, STP34N65M5 offers optimal balance of through-hole mechanical robustness, 50 V/ns dv/dt immunity, and guaranteed avalanche capability - making it preferred for industrial SMPS where field-replaceability and surge resilience are mandatory.

Availability

STP34N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STP34N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-voltage, high-efficiency power conversion in industrial and renewable energy systems where low conduction loss and rugged switching behavior are non-negotiable.

FAQ

Is STP34N65M5 pin-compatible with STP20NM60FD or STP24NM60?

No. STP34N65M5 has Gate-Drain-Source pinout (1-G, 2-D, 3-S) in TO-220, whereas STP20NM60FD uses Gate-Source-Drain (1-G, 2-S, 3-D). Physical pin reversal creates risk of catastrophic short-circuit if substituted without board redesign.

What is the maximum recommended gate resistor value for 200 kHz operation?

For stable 200 kHz switching with minimal overshoot, ST recommends R_G = 4.7 Ω (per Figure 16 test circuit). Values above 10 Ω increase turn-off delay (>59 ns) and reduce dv/dt immunity; below 2.2 Ω risks excessive peak gate current (>1.3 A) and driver stress.

Does STP34N65M5 require a negative gate voltage for reliable turn-off?

No. Its V_GS(th) range (3–5 V) and low Miller capacitance (6.3 pF Crss) allow clean turn-off with 0 V gate drive. However, –5 V bias improves noise immunity in high-noise industrial environments and reduces risk of spurious turn-on during fast dv/dt events.

Can STP34N65M5 replace STW34N65M5 in existing TO-247 designs?

No. STW34N65M5 uses TO-247 package with different pin spacing, thermal interface, and higher R_thJC (0.45 °C/W). Substituting STP34N65M5 (TO-220, R_thJC = 0.66 °C/W) would exceed thermal limits at rated current and violate mechanical mounting constraints.

STP34N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP34N65M5 FAQ

1.How can I place an order for STP34N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP34N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP34N65M5 reliable?

The price and inventory of STP34N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP34N65M5 is usually 5 days.

3.What payment methods are accepted for STP34N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP34N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP34N65M5?

STP34N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP34N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP34N65M5?

For technical support, including STP34N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP34N65M5 requirements.

6.How does Aetrix verify that STP34N65M5 is sourced from the original manufacturer or authorized distributors?

All STP34N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP34N65M5 meets industry standards.

7.What is the process for return or replacement of STP34N65M5?

All STP34N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP34N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP34N65M5 part is unused and in its original packaging.

Return procedure for STP34N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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