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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP34NM60N

Name: STP34NM60N
Brand: STMicroelectronics
SKU: STP34NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP34NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP34NM60N.pdf

Description:: MOSFET N-CH 600V 29A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP34NM60N from STMicroelectronics is an N-channel 600 V, 92 mΩ typ. (105 mΩ max), 31.5 A MDmesh™ II Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and resonant-mode SMPS topologies including PFC, LLC, and flyback converters operating up to 100 kHz. It delivers low conduction loss and fast switching with 84 nC total gate charge and 15 V/ns diode recovery dv/dt ruggedness.

For engineers reviewing the STP34NM60N datasheet, STP34NM60N pinout, STP34NM60N application, or STP34NM60N equivalent, key selection criteria include its 600 V V_DS, 105 mΩ R_DS(on) at 10 V_GS, 126 A pulsed drain current, 250 W power dissipation at T_C = 25 °C, and 100% avalanche-tested robustness for industrial power supply design.

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize both R_DS(on) and gate charge simultaneously-achieving 92 mΩ typ. R_DS(on) and 84 nC Q_g at V_DD = 480 V. Its optimized cell layout reduces output capacitance (C_oss = 173 pF) and reverse transfer capacitance (C_rss = 1.75 pF), enabling high-frequency operation with low switching losses.

The integrated body diode exhibits 412 ns typical reverse recovery time (T_J = 25 °C) and 8 µC Q_rr, with enhanced dv/dt immunity (50 V/ns MOSFET ruggedness and 15 V/ns diode recovery). Thermal resistance is specified at R_thJC = 0.5 °C/W, supporting high-power density designs when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 380–400 VAC PFC stages with margin.
R_DS(on) max	105 mΩ @ V_GS = 10 V, I_D = 14.5 A - Enables <1.1 W conduction loss at 31.5 A continuous current with proper thermal management.
I_D cont	31.5 A @ T_C = 25 °C - Supports >25 A RMS current in 100 kHz half-bridge PFC with 50 °C case temperature rise.
Q_g	84 nC - Reduces gate drive power requirement and enables use of lower-cost 1-A peak gate drivers.
E_AS	345 mJ - Guarantees unclamped inductive switching survival under worst-case turn-off conditions without external snubbers.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-speed switching in noisy high-voltage environments.
T_J max	150 °C - Allows operation in sealed industrial enclosures with ambient temperatures up to 85 °C and 65 K rise.

Pinout & Package

STP34NM60N uses a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when the heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires <2.9 Ω gate resistance to damp ringing and limit peak current during switching.
2 (Middle)	Drain (D)	High-voltage power node; directly bonded to metal tab-must be electrically isolated from heatsink unless system ground is floating.
3 (Right)	Source (S)	Power return path and reference for gate drive; connects to low-side shunt or controller ground plane.

Key Features

Feature	Design Value
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 345 mJ-eliminates need for derating in inductive load switching.
Low C_iss/C_oss/C_rss	2722 pF / 173 pF / 1.75 pF at V_DS = 100 V-reduces Miller effect and improves hard-switching efficiency above 50 kHz.
MDmesh™ II vertical structure	Combines strip layout with deep-trench process to achieve 30% lower R_DS(on) × Q_g figure-of-merit vs. first-gen devices.
Low gate input resistance	R_g = 2.9 Ω - Minimizes gate oscillation risk and simplifies RC damping network design.
Enhanced diode recovery	trr = 412 ns, Q_rr = 8 µC - Reduces switching loss and EMI in bridge-leg configurations with freewheeling paths.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectification

Use Scenario: Active clamp forward or asymmetric half-bridge converter in 1–3 kW telecom rectifiers operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling 400 VDC bus with synchronous rectification timing coordination.

Use Value: 92 mΩ R_DS(on) and 84 nC Q_g reduce conduction + switching losses by ~18% vs. comparable 650 V MOSFETs, improving full-load efficiency to >96%.

Use Scenario: Boost PFC stage in 80 PLUS Titanium-certified server PSUs with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch controlling input current waveform shape and phase alignment.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during zero-crossing transitions, ensuring stable THD <3% at light loads.

Solar Microinverters

EV Onboard Chargers

Use Scenario: H-bridge inverter stage converting 40–60 VDC PV string output to 230 VAC grid-synchronized output.

IC Role / Device Role / Timing Role: Low-side switching element in bidirectional topology with precise dead-time control.

Use Value: 126 A pulsed ID capability supports 2× peak current surges during MPPT transients without SOA violation.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary supply using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Primary-side ZVS switch requiring low C_oss (173 pF) and tight Q_gd/Q_gs ratio for soft switching.

Use Value: C_oss eq. = 458 pF over 0–480 V enables reliable ZVS down to 50 kHz, reducing switching loss by 40% vs. standard superjunction MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 190 mΩ, 21 A, TO-220; higher R_DS(on), lower Q_g (44 nC), no avalanche rating.	Lower current capability limits use to ≤1.5 kW PFC; unsuitable for unclamped inductive loads.	Select only if gate drive strength is constrained and avalanche stress is absent in system-level testing.
IXFH50N60P	600 V, 120 mΩ, 50 A, TO-247; higher R_DS(on), higher Q_g (120 nC), rated for 500 mJ E_AS.	Better thermal performance (R_thJC = 0.35 °C/W) but larger footprint and cost; suited for forced-air-cooled 3–5 kW systems.	Prefer when junction temperature must stay below 125 °C under sustained 40 A pulsed loads with limited heatsink area.

Compared with IPP60R190C7 and IXFH50N60P, STP34NM60N offers the optimal balance of low R_DS(on), moderate Q_g, guaranteed avalanche robustness, and TO-220 compatibility-making it ideal for cost-sensitive, thermally constrained 2–3 kW industrial power supplies where reliability under transient overload is critical.

Availability

STP34NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectification systems, and solar microinverter designs requiring stable component supply across multi-year production cycles.

Supply support for STP34NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's MDmesh™ II superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and industrial motor drives where low R_DS(on) × Q_g is critical.

FAQ

What is the maximum recommended gate-source voltage for STP34NM60N?

The absolute maximum V_GS is ±25 V per datasheet Table 1. Operation above ±20 V risks accelerated gate oxide degradation, while below ±10 V may cause incomplete turn-on and increased R_DS(on). For reliable long-term performance, ST recommends clamping gate drive between –5 V and +15 V using a Zener diode or dedicated gate driver with rail-to-rail output.

Can STP34NM60N replace STW34NM60N in existing designs?

No-STW34NM60N is in TO-247 package with different thermal and mechanical characteristics (R_thJC = 0.35 °C/W vs. 0.5 °C/W), higher I_D rating (45 A), and distinct pinout. Direct replacement would require PCB layout changes, heatsink revalidation, and SOA recalculation due to altered thermal impedance and peak current capability.

Is the TO-220 tab electrically isolated in STP34NM60N?

No-the metal tab is internally connected to the drain terminal (Pin 2). Electrical isolation from the heatsink is mandatory unless the heatsink is fully floating. Use ST-approved insulating pads (e.g., Sil-Pad 2000) and shoulder washers to maintain creepage/clearance compliance per IEC 62368-1 for 600 V systems.

Does STP34NM60N support paralleling for higher current applications?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 10) ensures inherent current sharing when multiple units are operated in parallel with matched gate drive and symmetrical PCB layout. Derate total current by 15% and ensure <5 nH loop inductance per device to avoid dynamic imbalance during turn-on/turn-off transitions.

STP34NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2722 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP34NM60N FAQ

1.How can I place an order for STP34NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STP34NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP34NM60N reliable?

The price and inventory of STP34NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP34NM60N is usually 5 days.

3.What payment methods are accepted for STP34NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP34NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP34NM60N?

STP34NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP34NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP34NM60N?

For technical support, including STP34NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP34NM60N requirements.

6.How does Aetrix verify that STP34NM60N is sourced from the original manufacturer or authorized distributors?

All STP34NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP34NM60N meets industry standards.

7.What is the process for return or replacement of STP34NM60N?

All STP34NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STP34NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP34NM60N part is unused and in its original packaging.

Return procedure for STP34NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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