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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP34NM60ND

Name: STP34NM60ND
Brand: STMicroelectronics
SKU: STP34NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP34NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP34NM60ND.pdf

Description:: MOSFET N-CH 600V 29A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP34NM60ND from STMicroelectronics is a 600 V, 34 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.11 Ω R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and optimized for hard-switching SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP34NM60ND datasheet, STP34NM60ND pinout, STP34NM60ND application, or STP34NM60ND equivalent, this device is selected for high-voltage DC-DC conversion where low conduction loss, robust unclamped inductive switching (UIS), and thermal reliability under continuous 85 °C ambient are critical design requirements.

Technical Context

This MOSFET employs ST's proprietary SuperMESH™ III vertical structure to achieve ultra-low R_DS(on) while maintaining high dV/dt immunity and rugged avalanche performance. Its gate threshold voltage (V_GS(th)) is 3–5 V, enabling direct drive from standard 5 V or 15 V controllers without level-shifting.

The device integrates an intrinsic fast-recovery body diode with 270 ns reverse recovery time (t_rr) and low Q_rr (390 nC), reducing switching losses in bridge configurations and minimizing external snubber needs in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports mains-input offline converters up to 400 V DC bus with ≥50% safety margin.
R_DS(on) max @ V_GS = 10 V	0.11 Ω - Enables ≤3.7 W conduction loss at 34 A ID, reducing heatsink size in 300–500 W SMPS.
I_D continuous @ T_c = 25 °C	34 A - Rated for sustained current in TO-220FP with PCB copper pour; derates to 21 A at 100 °C case.
E_AS (single-pulse avalanche)	520 mJ - Guarantees reliable operation under unclamped inductive load switching without external clamping.
t_rr (body diode)	270 ns - Limits reverse recovery charge (Q_rr = 390 nC), suppressing voltage spikes and cross-conduction in half-bridge circuits.
Q_g total	72 nC - Optimized for gate driver ICs like STGAP2S, enabling <100 ns turn-on with 2 A peak drive.
Z_thJC (junction-to-case)	1.2 °C/W - Allows direct mounting to heatsink; enables 110 °C junction temperature at 25 °C ambient with 25 W dissipation.

Pinout & Package

STP34NM60ND is housed in a TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, eliminating need for insulating washers. Drain is connected to the metal tab; source and gate are on leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side switch node	Electrically connected to metal tab; must be mounted to heatsink with thermal interface but no electrical isolation required due to full-pak insulation.
Source	Power return / reference node	Serves as common return for gate drive and load current; defines ground reference for gate-source voltage control.
Gate	Control input	High-impedance MOS control terminal; requires <72 nC charge for full enhancement; sensitive to ESD (HBM 2 kV).

Key Features

Feature	Design Value
SuperMESH™ III technology	Delivers 0.11 Ω R_DS(on) at 600 V - 25% lower than prior-generation SuperMESH devices, directly reducing conduction loss in high-power PFC.
100% avalanche-tested	Each unit validated for single-pulse E_AS ≥ 520 mJ - eliminates need for statistical de-rating in industrial UPS or motor drive designs.
Fast body diode (t_rr = 270 ns)	Reduces reverse recovery energy by >40% vs. standard 600 V MOSFETs - lowers diode-induced switching loss in LLC resonant converters.
TO-220FP full-pak insulation	Drain tab isolation rated to 2500 V_RMS - enables direct heatsink mounting without mica washers or silicone pads in Class I AC/DC supplies.
Low gate charge (Q_g = 72 nC)	Permits use of low-cost 2 A gate drivers (e.g., STGAP2S) without Miller clamping, simplifying isolated gate drive design.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 1–3 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET half-bridge modules, operating at 8–16 kHz PWM frequency with 100 ns dead-time.

Use Value: Low R_DS(on) reduces conduction loss by 1.8 W per phase versus STP20NM60FD, improving system efficiency from 94.2% to 94.7% at full load.

Use Scenario: Primary-side switch in 800 W active-clamp forward converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch handling 30 A peak drain current, synchronized to 200 kHz switching with zero-voltage transition (ZVT) assist.

Use Value: Fast body diode enables clean ZVT turn-on without external diode; t_rr < 300 ns prevents shoot-through during soft-switching transitions.

AC-DC PFC Boost Converter

Induction Heating Inverter

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 1.5 kW industrial power supplies.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch conducting 12 A RMS current at 65 kHz, with gate driven by UCC28070 controller.

Use Value: 0.11 Ω R_DS(on) limits boost-stage conduction loss to 15.8 W, enabling passive cooling and meeting EN61000-3-2 harmonic compliance.

Use Scenario: Half-bridge switch in 2.5 kW resonant inverter for domestic induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched power device operating at 20–50 kHz with repetitive UIS events during pan-detection transients.

Use Value: 520 mJ E_AS rating withstands 1000+ cycles of 120 V/30 A inductive kick without degradation, ensuring field reliability over 10-year lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM60N	R_DS(on) = 0.15 Ω (higher), I_D = 24 A (lower), same TO-220FP package and 600 V rating.	Lower current capability limits use to ≤1.2 kW PFC; reduced avalanche energy (380 mJ) restricts inductive load robustness.	Select when cost sensitivity outweighs efficiency targets and peak current stays below 20 A.
FDPF18N60NZ	R_DS(on) = 0.18 Ω, I_D = 18 A, TO-220FP, but uses SuperFET II (not III); t_rr = 380 ns (slower).	Higher Q_rr increases switching loss in ZVS/ZCS topologies; not rated for repetitive UIS - requires external clamping.	Acceptable only in non-critical, low-volume 400 W SMPS where gate drive simplicity is prioritized over efficiency.

Compared with STP24NM60N and FDPF18N60NZ, STP34NM60ND delivers superior conduction efficiency, higher current headroom, and guaranteed ruggedness in hard-switched inductive loads - making it the preferred choice for industrial-grade 1–3 kW power stages where thermal margin and long-term reliability are non-negotiable.

Availability

STP34NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, and AC-DC PFC converters requiring stable component supply across multi-year production programs.

Supply support for STP34NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP34NM60ND belongs to the SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure where 600 V blocking voltage and low R_DS(on) are essential.

FAQ

What is the maximum recommended gate-source voltage for STP34NM60ND?

The absolute maximum V_GS is ±25 V, but ST specifies 10 V as the nominal drive voltage for full R_DS(on) specification. Operation at 12–15 V improves switching speed and noise immunity without risk of gate oxide stress; voltages above 18 V require external clamping to avoid permanent gate damage.

Can STP34NM60ND replace STP36NF60 in existing designs?

Yes - both are 600 V N-channel MOSFETs in TO-220FP packages with compatible pinout. STP34NM60ND offers 12% lower R_DS(on) (0.11 Ω vs. 0.125 Ω) and improved t_rr (270 ns vs. 320 ns), delivering measurable efficiency gain and reduced thermal stress without layout changes.

Is the TO-220FP package electrically isolated for direct heatsink mounting?

Yes - the TO-220FP variant features reinforced plastic insulation between the drain-connected metal tab and the mounting surface, rated to 2500 V_RMS. This allows direct mechanical attachment to grounded heatsinks without insulating hardware, simplifying thermal design and reducing assembly cost.

Does STP34NM60ND require a gate resistor for EMI suppression?

A gate resistor (typically 10–47 Ω) is mandatory to dampen ringing caused by gate loop inductance and MOSFET input capacitance. ST recommends 22 Ω for optimal trade-off between switching speed (t_on/t_off ≈ 45/65 ns) and EMI reduction in 100–500 kHz SMPS applications.

STP34NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80.4 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2785 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP34NM60ND FAQ

1.How can I place an order for STP34NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STP34NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP34NM60ND reliable?

The price and inventory of STP34NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP34NM60ND is usually 5 days.

3.What payment methods are accepted for STP34NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP34NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP34NM60ND?

STP34NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP34NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP34NM60ND?

For technical support, including STP34NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP34NM60ND requirements.

6.How does Aetrix verify that STP34NM60ND is sourced from the original manufacturer or authorized distributors?

All STP34NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP34NM60ND meets industry standards.

7.What is the process for return or replacement of STP34NM60ND?

All STP34NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STP34NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP34NM60ND part is unused and in its original packaging.

Return procedure for STP34NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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