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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP35N60DM2

Name: STP35N60DM2
Brand: STMicroelectronics
SKU: STP35N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP35N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP35N60DM2.pdf

Description:: MOSFET N-CH 600V 28A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:988

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Product details

Overview

STP35N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in TO-220 package, featuring 600 V V_DS, 0.094 Ω typ. R_DS(on), 28 A continuous drain current, fast-recovery body diode (t_rr = 120 ns), and Zener-protected gate. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STP35N60DM2 datasheet, STP35N60DM2 pinout, STP35N60DM2 application, or STP35N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 650 mJ), dv/dt immunity (50 V/ns), low Q_g (54 nC), and integrated back-to-back gate Zener protection.

Technical Context

This MDmesh™ DM2 device combines ultra-low Q_rr (572 nC) and t_rr with minimized C_oss (110 pF) and C_rss (2.8 pF), enabling efficient hard-switching and soft-switching operation. Its 0.6 °C/W R_thj-case supports high-power thermal management in compact designs.

The built-in gate-source Zener diodes (±30 V breakdown) provide ESD robustness without external clamping, while the 100% avalanche-tested construction ensures reliability under unclamped inductive switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V AC-input PFC and resonant LLC converters
R_DS(on) max	0.110 Ω - limits conduction loss to ≤34 W at 28 A, enabling high-efficiency 200–500 W SMPS
Q_g	54 nC - reduces gate drive power and enables use with low-current drivers (e.g., 1 A peak)
t_rr	120 ns @ T_j = 25 °C - minimizes diode recovery loss in synchronous rectification and half-bridge freewheeling
E_AS	650 mJ - withstands single-pulse inductive energy without failure in UPS or motor drive snubberless designs
dv/dt ruggedness	50 V/ns - prevents spurious turn-on in high-speed, high-bus-voltage inverters and EV chargers
R_thj-case	0.6 °C/W - allows 210 W dissipation with ≤126 °C junction rise above 25 °C case temperature

Pinout & Package

TO-220 type A package: insulated tab, vertical mounting, lead-free and RoHS-compliant ECOPACK® grade. Case connected to drain (D); source (S) and gate (G) on leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path / heat sink interface	Electrically active drain terminal; requires insulating washer when mounted to grounded heatsink
Source (Lead 1)	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based overcurrent detection in half-bridge legs
Gate (Lead 2)	Control input for channel modulation	High-impedance node with ±30 V Zener clamp; sensitive to layout-induced ringing

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 120 ns and Q_rr = 572 nC enable zero-voltage switching in phase-shift full-bridge converters without external SiC diodes
Extremely low gate charge	Q_g = 54 nC reduces driver losses by >40% vs. legacy 600 V MOSFETs, permitting smaller gate drivers
Zener-protected gate	Integrated ±30 V gate-source Zener eliminates need for external TVS, simplifying PCB layout and BOM
100% avalanche tested	Each unit validated for 6 A repetitive avalanche current and 650 mJ single-pulse energy per JEDEC JESD24-11

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge inverter stage for 3 kW HVAC compressors operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switch with fast body diode conducting freewheeling current during dead-time.

Use Value: Low Q_rr (572 nC) cuts diode recovery loss by 65% vs. standard 600 V MOSFETs, reducing heatsink size by 30%.

Use Scenario: Active clamp forward converter in 1.5 kW telecom rectifier with 100 kHz switching.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus and 28 A peak current; gate driven by isolated transformer.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during voltage transients on shared bus lines.

EV On-Board Charger

Renewable Energy Inverters

Use Scenario: Primary-side switch in dual-phase interleaved PFC stage of 6.6 kW OBC.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch with integrated diode conducting reverse current during interleaving dead-time.

Use Value: 120 ns t_rr and 1.6 V V_SD minimize conduction and recovery losses, improving PFC efficiency to ≥98.5%.

Use Scenario: DC-link switch in 5 kW string inverter with 800 V PV input and transformerless topology.

IC Role / Device Role / Timing Role: High-reliability main switch subjected to repeated lightning-induced surges and grid fault transients.

Use Value: 100% avalanche testing and 650 mJ E_AS ensure survival under unclamped inductive faults common in solar farm deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V rating, 0.099 Ω R_DS(on), 57 nC Q_g, no integrated Zener	Higher voltage margin but lacks gate Zener; requires external clamping in noisy environments	Preferred where 650 V headroom is critical and board space allows external TVS
STW35N60DM2	Identical die in TO-247 package; same R_DS(on), Q_g, t_rr, and Zener protection	Superior thermal performance (R_thj-case = 0.45 °C/W) but larger footprint and higher cost	Chosen when >210 W power dissipation or extended lifetime at 100 °C case temperature is required

Compared with IPP60R099C7, STP35N60DM2 offers integrated gate protection and lower dv/dt sensitivity; versus STW35N60DM2, it trades thermal capability for cost and footprint savings in space-constrained 200–300 W designs.

Availability

STP35N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server & telecom power supplies, EV on-board chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STP35N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ DM2 product line targets high-efficiency, high-frequency power conversion systems-specifically optimized for ZVS, phase-shift, and bridge topologies demanding low Q_rr, fast t_rr, and rugged avalanche behavior.

FAQ

What is the maximum safe operating temperature for STP35N60DM2?

The device has a maximum operating junction temperature of 150 °C and storage temperature range of –55 to +150 °C. With R_thj-case = 0.6 °C/W and P_TOT = 210 W, case temperature must be held ≤25 °C for full power rating; derating is required above that, per Figure 2's SOA curve.

Does STP35N60DM2 require external gate protection?

No. The device integrates back-to-back gate-source Zener diodes with ±30 V breakdown voltage, providing inherent ESD and overvoltage protection. External TVS devices are unnecessary unless system-level transients exceed ±30 V at the gate pin under worst-case layout conditions.

How does the body diode performance compare to discrete Schottky diodes?

At 28 A and 25 °C, its V_SD = 1.6 V and t_rr = 120 ns outperform standard 600 V FRDs but not SiC Schottkys. However, its co-packaged integration eliminates layout parasitics and reduces component count-making it preferable in cost- and space-sensitive bridge designs where <2% efficiency penalty is acceptable.

Can STP35N60DM2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 10) enables inherently self-balancing current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥4.7 Ω) to damp oscillation; thermal coupling between devices improves balance stability.

STP35N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP35N60DM2 FAQ

1.How can I place an order for STP35N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP35N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP35N60DM2 reliable?

The price and inventory of STP35N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP35N60DM2 is usually 5 days.

3.What payment methods are accepted for STP35N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP35N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP35N60DM2?

STP35N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP35N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP35N60DM2?

For technical support, including STP35N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP35N60DM2 requirements.

6.How does Aetrix verify that STP35N60DM2 is sourced from the original manufacturer or authorized distributors?

All STP35N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP35N60DM2 meets industry standards.

7.What is the process for return or replacement of STP35N60DM2?

All STP35N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STP35N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP35N60DM2 part is unused and in its original packaging.

Return procedure for STP35N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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