STMicroelectronics STP35N65DM2

Overview

STP35N65DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 650 V V_DS, 93 mΩ typ. R_DS(on), 32 A continuous drain current, fast-recovery body diode (t_rr = 100 ns @ 25 °C), and 100% avalanche tested. It is engineered for ZVS phase-shift converters and full-bridge topologies requiring low Q_rr and high dv/dt ruggedness.

For engineers reviewing the STP35N65DM2 datasheet, STP35N65DM2 pinout, STP35N65DM2 application, or STP35N65DM2 equivalent, key selection criteria include its 56.3 nC total gate charge, 100 V/ns MOSFET dv/dt ruggedness, 1150 mJ single-pulse avalanche energy, and TO-220 package thermal resistance of 0.5 °C/W junction-to-case.

Technical Context

This device implements ST's MDmesh DM2 silicon technology optimized for high-efficiency hard-switched and resonant SMPS topologies. Its low C_iss (2540 pF) and ultra-low Q_gd/Q_gs ratio (27.6 nC / 12.7 nC) enable precise switching control with minimal Miller effect, while the Zener-protected gate ensures robust ESD immunity up to ±25 V.

The integrated fast-recovery body diode delivers t_rr = 100 ns and Q_rr = 0.42 µC at 25 °C - critical for reducing commutation losses in bridge-leg operation. Its 100% unclamped inductive switching (UIS) qualification at I_AR = 4 A confirms reliability under transient overloads.

Key Specifications

Pinout & Package

Supplied in TO-220 type A package with isolated tab (drain-connected). Standard 3-pin through-hole mounting; tab electrically connected to drain for direct heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R090CFD7 and IXTH30N65X2, STP35N65DM2 uniquely balances low Q_rr, moderate Q_g, and proven avalanche ruggedness - making it optimal for ZVS bridge converters where diode recovery and fault tolerance are co-critical.

Availability

STP35N65DM2 is available at Aetrix Electronics and suitable for server PSUs, industrial UPS inverters, solar microinverters, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP35N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh DM2 series targets high-efficiency AC-DC and DC-DC conversion, emphasizing low Q_rr, high dv/dt immunity, and rugged avalanche performance for next-generation SMPS topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP35N65DM2 supports 20 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12245 Rev 3. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

Yes - its 100 ns t_rr and 0.42 µC Q_rr at 25 °C meet stringent requirements for LLC secondary-side synchronous rectification. However, Q_rr rises to 1.8 µC at 150 °C, so layout must minimize parasitic inductance and gate drive must be precisely timed to avoid shoot-through during high-temperature operation.

Does the TO-220 package have an isolated tab, and what is its voltage rating?

Yes - the TO-220 type A package features an electrically isolated drain-connected tab rated for 650 V working voltage. The isolation is achieved via molded plastic between tab and leads; no additional insulator is needed unless the heatsink is grounded, in which case a mica or ceramic washer must be used to maintain creepage/clearance.

How does the 100% avalanche testing impact reliability in real-world surge events?

Each STP35N65DM2 undergoes UIS testing at 1150 mJ (I_AR = 4 A, V_DD = 50 V), verifying robustness against single-event inductive spikes. This translates to field reliability in motor drives and UPS systems where line surges or load dumps generate unclamped inductive transients - eliminating need for external avalanche-rated snubbers in most Class II industrial designs.