Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP35N65M5

Name: STP35N65M5
Brand: STMicroelectronics
SKU: STP35N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP35N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP35N65M5.pdf

Description:: MOSFET N-CH 650V 27A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,449

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP35N65M5 from STMicroelectronics is an N-channel 650 V, 85 mΩ typ. (98 mΩ max.), 27 A MDmesh™ M5 Power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency hard-switching and ZVS resonant topologies in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STP35N65M5 datasheet, STP35N65M5 pinout, STP35N65M5 application, or STP35N65M5 equivalent, key selection criteria include its 15 V/ns dv/dt capability, 800 mJ single-pulse avalanche energy, 83 nC total gate charge, and 0.78 °C/W junction-to-case thermal resistance - all critical for reliable high-voltage power conversion design.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining robust 650 V breakdown voltage and high dv/dt immunity. Its body diode exhibits 360 ns reverse recovery time and 7 µC Q_rr at 25 °C, enabling efficient operation in inductive switching circuits.

The MOSFET supports continuous drain current up to 27 A at T_C = 25 °C and 17 A at T_C = 100 °C, with 108 A pulsed rating and 160 W total power dissipation. Its gate threshold voltage (3–5 V) and low input capacitance (3750 pF) facilitate clean turn-on with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V nominal with ≥1.6× safety margin in 3-phase rectified systems.
R_DS(on) max	98 mΩ at V_GS = 10 V, I_D = 13.5 A - Enables <1.3 W conduction loss at 15 A, reducing heatsink requirements.
Q_g	83 nC - Matches standard 1-A gate drivers for ≤100 ns switching transitions under 4.7 Ω gate resistance.
E_AS	800 mJ - Guarantees ruggedness against unclamped inductive switching events without external snubbers.
dv/dt	15 V/ns - Suppresses false turn-on in high-noise bridge-leg configurations without active Miller clamping.
R_thJC	0.78 °C/W - Allows direct mounting to heatsinks for >100 W continuous power handling in forced-air environments.

Pinout & Package

D²PAK (TO-263) package: 3-pin surface-mount outline with exposed drain tab (pin 2) for thermal and electrical connection; JEDEC MS-013AC compliant; 15.0–15.85 mm length, 10.0–10.4 mm width, 4.4–4.6 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires ≤100 nA leakage current drive; sensitive to ESD (±25 V rating).
2 (TAB/D)	Drain (exposed tab)	Primary high-voltage power path; electrically and thermally connected to PCB copper pour; must be isolated from other nets.
3 (S)	Source	Reference node for gate drive and current sensing; ties to low-side switch node or shunt resistor ground return.

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Reduces specific on-resistance by 35% vs. prior-generation 650 V MOSFETs, enabling smaller die size without sacrificing voltage rating.
100% avalanche tested	Each unit validated for single-pulse avalanche energy ≥800 mJ, eliminating need for derating in flyback or LLC transient conditions.
Low Crss (5.5 pF)	Minimizes Miller-induced shoot-through risk in half-bridge operation, supporting stable 100 kHz+ switching with 4.7 Ω gate resistors.
Optimized body diode	360 ns t_rr and 7 µC Q_rr reduce commutation losses in synchronous rectification and bidirectional converters.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW offline PSUs with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side hard-switched MOSFET in LLC resonant converter operating at 100–300 kHz.

Use Value: 85 mΩ R_DS(on) cuts conduction loss by 22% vs. comparable 600 V devices, improving full-load efficiency to ≥95.2%.

Use Scenario: Active clamp forward or phase-shifted full-bridge in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC bus with 20 A RMS current and 150 ns dead-time constraints.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions across transformer leakage inductance.

Solar Microinverters

EV Onboard Chargers

Use Scenario: DC-DC boost stage interfacing PV panels (60–150 V) to 400 V DC link in single-phase microinverters.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved boost converter with 200 kHz switching frequency.

Use Value: Low Q_gd/Q_gs ratio (35/19 nC) enables precise zero-voltage switching detection and reduces gate drive power by 30%.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in dual-active-bridge topology with 350 kHz carrier.

Use Value: 0.78 °C/W R_thJC allows direct thermal coupling to cold plate, sustaining 27 A continuous current without derating at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH30N65X2	650 V, 115 mΩ max., 30 A, higher Q_g (105 nC), no avalanche rating specified	Requires stronger gate driver; unsuitable for unclamped inductive loads without external protection	Prefer when higher peak current (30 A) is needed and avalanche robustness is not required
IPP65R099C7	650 V, 99 mΩ max., 27 A, lower C_iss (2800 pF), but only 500 mJ E_AS	Improved high-frequency switching but reduced ruggedness in overload fault conditions	Choose for high-frequency PFC where dv/dt stress is low and avalanche margin is secondary

Compared with IXTH30N65X2 and IPP65R099C7, STP35N65M5 delivers superior avalanche ruggedness (800 mJ vs. unspecified/500 mJ) and lower gate charge (83 nC vs. 105/72 nC), making it optimal for cost-sensitive industrial SMPS where reliability under transient overloads is mandatory.

Availability

STP35N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STP35N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

STP35N65M5 belongs to the MDmesh M5 family - engineered specifically for high-efficiency, high-reliability 600–650 V power conversion in industrial and renewable energy systems where low R_DS(on), high dv/dt immunity, and avalanche ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current for STP35N65M5 at 100 °C case temperature?

The maximum continuous drain current is 17 A at T_C = 100 °C, as specified in Table 1 of DS6068 Rev 4. This rating accounts for thermal derating due to junction-to-case resistance (0.78 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load.

Does STP35N65M5 have an integrated body diode, and what are its key recovery characteristics?

Yes, STP35N65M5 features a monolithic source-drain body diode rated for 27 A continuous and 108 A pulsed current. At 25 °C, its reverse recovery time is 360 ns with 7 µC Q_rr and 36 A I_RRM; at 150 °C, t_rr increases to 425 ns and Q_rr to 8 µC, per Table 7 in DS6068 Rev 4.

Can STP35N65M5 be used in zero-voltage switching (ZVS) topologies?

Yes - its low output capacitance (C_oss = 84 pF typ.) and energy-related Co(er) of 75 pF enable efficient ZVS operation in LLC and phase-shifted full-bridge converters. The 83 nC Q_g and 5.5 pF Crss further support clean gate control during resonant transitions.

Is STP35N65M5 RoHS-compliant and halogen-free?

Yes - STP35N65M5 is supplied in ECOPACK®2-compliant D²PAK packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation is available via ST's quality portal using order code STP35N65M5.

STP35N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3750 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP35N65M5 FAQ

1.How can I place an order for STP35N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP35N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP35N65M5 reliable?

The price and inventory of STP35N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP35N65M5 is usually 5 days.

3.What payment methods are accepted for STP35N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP35N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP35N65M5?

STP35N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP35N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP35N65M5?

For technical support, including STP35N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP35N65M5 requirements.

6.How does Aetrix verify that STP35N65M5 is sourced from the original manufacturer or authorized distributors?

All STP35N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP35N65M5 meets industry standards.

7.What is the process for return or replacement of STP35N65M5?

All STP35N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP35N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP35N65M5 part is unused and in its original packaging.

Return procedure for STP35N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…