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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP36N55M5

Name: STP36N55M5
Brand: STMicroelectronics
SKU: STP36N55M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP36N55M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP36N55M5.pdf

Description:: MOSFET N-CH 550V 33A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP36N55M5 from STMicroelectronics is an N-channel 550 V, 33 A MDmesh™ V Power MOSFET in TO-220 package with typ. R_DS(on) of 0.06 Ω, 150 °C max junction temperature, and 100% avalanche tested - used as a high-voltage switching device in offline SMPS primary-side power stages.

For engineers reviewing the STP36N55M5 datasheet, STP36N55M5 pinout, STP36N55M5 application, or STP36N55M5 equivalent, key selection criteria include its 550 V V_(BR)DSS, low gate charge (62 nC), fast switching (t_r = 56 ns), robust dv/dt capability (15 V/ns), and thermal resistance (0.66 °C/W junction-to-case).

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 550 V breakdown voltage supports universal-input AC-DC converters up to 400 V DC bus.

The device features fully characterized unclamped inductive switching behavior, 510 mJ single-pulse avalanche energy, and optimized capacitance profile (C_iss = 2670 pF, C_oss = 75 pF) for ZVS-compatible topologies including LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	550 V - Withstands full rectified 380 VAC line surges without breakdown in offline PFC and flyback designs.
R_DS(on) typ.	0.06 Ω at V_GS = 10 V, I_D = 16.5 A - Enables <1.5 W conduction loss at 20 A, critical for high-power-density 100–300 W adapters.
Q_g	62 nC - Supports efficient 100–300 kHz switching with standard gate drivers (e.g., STMicro's STD5N20L); reduces driver power dissipation.
t_r/t_f	56 ns / 13 ns - Minimizes switching transition losses in hard-switched topologies; enables clean turn-on/turn-off waveforms under 22 A load.
R_thj-case	0.66 °C/W - Allows 190 W continuous dissipation at T_C = 25 °C; supports thermally constrained PCB layouts with minimal heatsink mass.
E_AS	510 mJ - Guarantees ruggedness against transient overloads and inductive kickback in motor drives and UPS inverters.

Pinout & Package

TO-220 package (Type A) with isolated tab (drain-connected), 3-pin through-hole mounting. Tab is electrically connected to drain; Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires ≤10 V drive for full enhancement; sensitive to ESD (±25 V absolute max rating).
Pin 2 / Tab	Drain	Main high-voltage power terminal; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential.
Pin 3	Source	Power return path and gate reference node; carries full load current (33 A continuous); forms common node for gate driver return.

Key Features

Feature	Design Value
MDmesh™ V process technology	Delivers lowest R_DS(on) × area among silicon MOSFETs rated ≥500 V - directly enables smaller die size and higher power density.
100% avalanche tested	Each unit validated for single-pulse avalanche energy ≥510 mJ - eliminates need for external snubbers in inductive switching applications.
High dv/dt immunity	Rated 15 V/ns - suppresses false triggering during fast voltage transients in high-noise industrial motor drives and EV chargers.
Low Crss/Ciss ratio	Crss = 6.6 pF, Ciss = 2670 pF → 0.25% - improves Miller immunity and enables stable operation with moderate gate resistance (4.7 Ω typical).

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 300–500 W active-clamp forward or half-bridge DC-DC converters operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling full input power; synchronized to PWM controller (e.g., UC384x) at 100–200 kHz.

Use Value: 0.06 Ω R_DS(on) reduces conduction loss by >30% vs. legacy 600 V MOSFETs, enabling >94% peak efficiency at full load.

Use Scenario: Output synchronous rectification in 12 V/50 A telecom rectifier modules with OR-ing FET control.

IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diodes; driven by dedicated gate controller (e.g., LM5050).

Use Value: 1.5 V V_SD forward drop at 33 A cuts rectifier loss by 40% versus 0.5 V Schottky, improving thermal margin in confined 1U chassis.

Uninterruptible Power Supplies (UPS)

Motor Drive Inverters

Use Scenario: Inverter leg switch in 1–2 kVA double-conversion UPS systems converting 400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter bridge; gated by isolated gate driver (e.g., Si823x).

Use Value: 132 A pulsed drain current and 150 °C T_jmax support 2× overload capability for 10 s without derating in battery backup mode.

Use Scenario: Phase-leg switch in 750 W BLDC motor drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-step commutation; controlled via 3-phase gate driver IC (e.g., IRS2330).

Use Value: 334 ns reverse recovery time (T_j = 25 °C) and 5 µC Q_rr minimize body-diode conduction loss during dead-time, reducing heat sink size by 25%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW36N55M5	Same die, TO-247 package; R_thj-case = 0.55 °C/W (vs. 0.66 °C/W); 10% higher P_TOT rating (210 W).	Better thermal performance in forced-air or liquid-cooled systems; larger footprint unsuitable for space-constrained TO-220 layouts.	Select when junction temperature must stay <135 °C under 18 A continuous load without oversized heatsink.
IPP60R099C7	650 V Si MOSFET; R_DS(on) = 0.099 Ω; Q_g = 52 nC; lower V_(BR)DSS margin but superior E_oss (1.2 µJ vs. 2.5 µJ).	Preferred in ZVS-resonant topologies (e.g., LLC) where low output capacitance energy reduces turn-on loss.	Choose for 300–500 kHz resonant converters where switching loss dominates; avoid in hard-switched 50–200 kHz PFC stages.

Compared with STW36N55M5 and IPP60R099C7, STP36N55M5 offers optimal balance of voltage margin (550 V), conduction efficiency (0.06 Ω), and TO-220 mechanical compatibility - making it the default choice for cost-sensitive, medium-power offline SMPS requiring proven avalanche ruggedness.

Availability

STP36N55M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, uninterruptible power supplies, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STP36N55M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ V high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline AC-DC conversion and industrial motor control applications demanding ruggedness and low R_DS(on).

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP36N55M5 supports 20.8 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 022902 Rev 2). This derating reflects thermal limits of the TO-220 package and ensures safe operation within the 150 °C maximum junction temperature.

Is the source-drain diode suitable for freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 33 A continuous (I_SD) and 132 A pulsed (I_SDM), with measured t_rr = 334 ns and Q_rr = 5 µC at 25 °C. Its soft recovery characteristic minimizes EMI and ringing in hard-switched freewheeling paths.

Does STP36N55M5 require a negative gate voltage for reliable turn-off?

No - the gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, and the device fully turns off with 0 V gate drive. However, applying –5 V to –10 V improves noise immunity in high-dv/dt environments and prevents spurious turn-on during fast transients.

Can STP36N55M5 replace older STP36NF55 in existing designs?

Yes - STP36N55M5 is a direct upgrade: identical TO-220 package, same pinout, improved R_DS(on) (0.06 Ω vs. 0.075 Ω), higher V_(BR)DSS (550 V vs. 55 V), and enhanced avalanche rating. No layout or driver changes are required for drop-in replacement.

STP36N55M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2670 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP36N55M5 FAQ

1.How can I place an order for STP36N55M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP36N55M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP36N55M5 reliable?

The price and inventory of STP36N55M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP36N55M5 is usually 5 days.

3.What payment methods are accepted for STP36N55M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP36N55M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP36N55M5?

STP36N55M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP36N55M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP36N55M5?

For technical support, including STP36N55M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP36N55M5 requirements.

6.How does Aetrix verify that STP36N55M5 is sourced from the original manufacturer or authorized distributors?

All STP36N55M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP36N55M5 meets industry standards.

7.What is the process for return or replacement of STP36N55M5?

All STP36N55M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP36N55M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP36N55M5 part is unused and in its original packaging.

Return procedure for STP36N55M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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