STMicroelectronics STP36N60M6

Overview

STP36N60M6 from STMicroelectronics is an N-channel 600 V, 99 mΩ (max), 30 A MDmesh™ M6 Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and resonant topologies in industrial SMPS, PFC stages, and motor drives. It features 100% avalanche tested ruggedness, Zener-protected gate, and low gate input resistance.

For engineers reviewing the STP36N60M6 datasheet, STP36N60M6 pinout, STP36N60M6 application, or STP36N60M6 equivalent, key selection criteria include R_DS(on) at 10 V drive, 50 V/ns MOSFET dv/dt ruggedness, 750 mJ single-pulse avalanche energy, and TO-220 thermal resistance of 0.6 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's MDmesh™ M6 superjunction technology, delivering improved R_DS(on) × area vs prior generations while maintaining robust switching behavior. Its 600 V V_(BR)DSS, 15 V/ns diode recovery dv/dt rating, and 340 ns reverse recovery time (T_j = 25 °C) support fast, reliable operation in continuous conduction mode (CCM) PFC and LLC resonant converters.

The device integrates a Zener-protected gate structure and exhibits low intrinsic gate resistance (1.6 Ω), enabling stable gate driving with reduced external gate resistor dependency. Its 44.3 nC total gate charge and 25 nC gate-drain charge optimize trade-offs between switching speed and EMI control in high-frequency power stages.

Key Specifications

Pinout & Package

STP36N60M6 uses the TO-220 type A package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology permits common-Drain mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPP60R099C7 and IXFH30N60X, STP36N60M6 offers superior dv/dt immunity (50 V/ns vs ≤35 V/ns), integrated gate Zener protection, and lower C_oss,eq-making it optimal for high-frequency, noise-sensitive PFC and resonant converters where reliability and layout simplicity are critical.

Availability

STP36N60M6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC boost stages, and motor drive inverter stages requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for STP36N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion systems operating at 65–300 kHz with stringent reliability and ruggedness requirements.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STP36N60M6 supports 19 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220 package and must be verified against actual board-level thermal resistance and ambient conditions in final layout.

Does STP36N60M6 require external gate protection?

No-STP36N60M6 integrates a Zener diode between gate and source, clamping transient gate voltage to ±25 V. External gate protection is not required unless system-level transients exceed this rating or layout introduces excessive inductance that could cause localized overshoot beyond the integrated clamp capability.

How does its body diode performance compare to standard silicon MOSFETs?

With 340 ns reverse recovery time and 5.3 μC Q_rr at 25 °C, STP36N60M6's body diode outperforms conventional planar MOSFETs (typically >1000 ns t_rr). This enables cleaner commutation in half-bridge and synchronous rectifier configurations, reducing voltage spikes and EMI generation during freewheeling.

Can STP36N60M6 replace STP36N60M5 in existing designs?

Yes-STP36N60M6 is a direct upgrade to STP36N60M5, offering lower R_DS(on) (99 mΩ vs 115 mΩ), improved switching efficiency, and enhanced avalanche ruggedness. No layout or drive circuit changes are needed, though gate drive strength should be verified given its slightly higher Q_g (44.3 nC vs 40.5 nC).