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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP38N65M5

Name: STP38N65M5
Brand: STMicroelectronics
SKU: STP38N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP38N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP38N65M5.pdf

Description:: MOSFET N-CH 650V 30A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP38N65M5 from STMicroelectronics is an N-channel 650 V, 30 A Power MOSFET based on MDmesh M5 vertical process technology with 73 mΩ typical R_DS(on) at V_GS = 10 V, 15 A, and 100% avalanche-tested ruggedness. It delivers high-efficiency switching in high-voltage AC-DC power supplies, solar inverters, and industrial motor drives.

For engineers reviewing the STP38N65M5 datasheet, STP38N65M5 pinout, STP38N65M5 application, or STP38N65M5 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 660 mJ single-pulse avalanche energy, 71 nC total gate charge, and TO-220 package thermal resistance of 62.5 °C/W (on FR-4).

Technical Context

This device implements ST's MDmesh M5 superjunction architecture to achieve ultra-low R_DS(on) × area trade-off while maintaining high V_DSS rating and fast switching. Its optimized cell layout reduces output capacitance (C_oss = 74 pF) and reverse transfer capacitance (C_rss = 5.8 pF), enabling high-frequency hard-switching operation up to 100 kHz.

The integrated body diode features low Q_rr (6.6 µC @ 25 °C) and soft recovery (trr = 382 ns), reducing EMI and commutation losses in bridge configurations. Gate threshold voltage is tightly controlled (3–5 V), ensuring robust noise immunity and predictable turn-on behavior across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 400 V AC mains rectified systems with ≥30% safety margin for surge and ringing.
R_DS(on) typ.	73 mΩ @ V_GS = 10 V, I_D = 15 A - Enables <1.1 W conduction loss at 30 A continuous current in TO-220.
Q_g	71 nC - Determines gate drive power requirement; compatible with standard 1-A peak drivers at ≤100 kHz.
E_AS	660 mJ - Guarantees unclamped inductive switching survival without external snubbers in flyback or PFC stages.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate transients in half-bridge topologies.
t_r, t_f	9 ns / 13 ns - Supports fast edge control for reduced switching loss and minimized dead-time requirements.
θ_JA (TO-220)	62.5 °C/W on 1-in² 2-oz FR-4 - Sets practical power limit to ~19 W continuous dissipation at 70 °C ambient.

Pinout & Package

STP38N65M5 is housed in a TO-220 package with isolated tab (non-conductive mounting option). The case serves as the drain terminal, enabling direct heatsink connection without insulating hardware when used with electrically isolated thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control input; requires <71 nC charge for full enhancement; sensitive to ESD.
2 (Lead)	Source (S)	Power return path and reference for gate drive; carries full load current and diode reverse recovery current.
3 (Tab)	Drain (D)	Main high-side power terminal; electrically connected to metal tab; must be insulated from heatsink unless system ground-referenced.

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Reduces R_DS(on) by 35% vs prior-generation 650 V MOSFETs, enabling smaller heatsinks in 1–3 kW SMPS.
100% UIS avalanche tested	Ensures guaranteed single-pulse energy handling (660 mJ) without derating-critical for PFC and LLC resonant converters.
Low Q_rr and soft diode recovery	6.6 µC Q_rr and 382 ns trr minimize voltage overshoot and EMI in synchronous rectification and bridge legs.
50 V/ns dv/dt ruggedness	Eliminates need for negative gate bias or active Miller clamp in high-noise industrial motor drive inverters.
ECOPACK® compliant packaging	Meets RoHS and halogen-free requirements without compromising thermal or mechanical performance in TO-220 form factor.

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: Three-phase IGBT/MOSFET inverter stage converting DC from PV array to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switching element in 650 V DC-link configuration; operates at 16–20 kHz PWM with hard-switched commutation.

Use Value: Low R_DS(on) and soft diode reduce conduction + switching losses by 12% vs comparable 600 V devices, improving inverter efficiency from 97.1% to 97.8% at 50% load.

Use Scenario: DC-DC boost converter in string-level solar optimizer or central inverter MPPT stage.

IC Role / Device Role / Timing Role: Main switching transistor handling up to 30 A DC input current at 650 V blocking; duty cycle modulated at 50–100 kHz.

Use Value: 73 mΩ R_DS(on) limits resistive loss to <0.7 W at full current, enabling passive cooling and >99% conversion efficiency in 2–5 kW modules.

Server PSU (LLC Resonant)

EV On-Board Charger (OBC)

Use Scenario: Primary-side switch in high-frequency LLC resonant converter powering 12 V/48 V server racks.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by low C_oss (74 pF) and C_rss (5.8 pF); operates at 300–700 kHz.

Use Value: Optimized capacitance ratio (C_iss/C_oss ≈ 40) ensures reliable ZVS across wide load range, reducing switching loss by 40% vs legacy 600 V FETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge topology in 3.3–22 kW bidirectional OBC units.

IC Role / Device Role / Timing Role: High-reliability main switch subjected to repeated unclamped inductive stress during regenerative braking transitions.

Use Value: 660 mJ E_AS rating allows safe operation under worst-case fault conditions without external clamping, simplifying BOM and improving functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R099C7	650 V, 99 mΩ, TO-220; higher R_DS(on) but lower Q_g (47 nC); no avalanche rating specified.	Preferred in cost-sensitive, lower-power (<1.5 kW) SMPS where gate drive simplicity outweighs conduction loss.	Select when prioritizing gate drive ease over thermal margin; verify avalanche capability via external circuit design.
IXFH30N65X2	650 V, 110 mΩ, TO-247; rated for 100% UIS but with higher R_DS(on) and larger footprint; Q_g = 62 nC.	Better suited for forced-air-cooled industrial drives requiring higher peak current (IDM = 120 A).	Choose for designs needing higher pulse current headroom and proven field reliability in harsh environments.

Compared with IPP65R099C7 and IXFH30N65X2, STP38N65M5 offers the lowest R_DS(on) in TO-220 form factor with certified avalanche ruggedness-making it optimal for thermally constrained, high-efficiency 2–4 kW power stages where board space and heatsink volume are critical.

Availability

STP38N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP38N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP38N65M5 belongs to the MDmesh™ M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V industrial and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current for STP38N65M5 at 100 °C case temperature?

The maximum continuous drain current is 19 A at T_C = 100 °C, as specified in Table 1 of DS8914 Rev 5. This reflects thermal derating due to junction-to-case resistance (0.66 °C/W) and maximum junction temperature limit of 150 °C. Operation above this current requires forced cooling or pulse-width limitation.

Does STP38N65M5 have a fully rated avalanche capability?

Yes-STP38N65M5 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11. It guarantees 660 mJ single-pulse avalanche energy at T_J = 25 °C and 8 A repetitive avalanche current, enabling robust operation in circuits without snubbers or clamps.

Can STP38N65M5 be used in place of STP36NF06L in a 400 V application?

No-STP36NF06L is a 60 V device incompatible with 400 V bus voltages. STP38N65M5 is rated for 650 V V_DSS and designed for high-voltage applications; substituting it into a 60 V design would result in excessive gate drive voltage requirements and suboptimal R_DS(on) utilization.

What is the recommended gate resistor value for hard-switching at 100 kHz?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6 test condition) for V_DD = 400 V, I_D = 20 A, yielding t_d(off) = 66 ns and t_f(i) = 13 ns. For 100 kHz operation, this value balances switching speed and gate driver stress; values below 3.3 Ω increase E_sw due to ringing, while above 10 Ω raises switching loss.

STP38N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP38N65M5 FAQ

1.How can I place an order for STP38N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP38N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP38N65M5 reliable?

The price and inventory of STP38N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP38N65M5 is usually 5 days.

3.What payment methods are accepted for STP38N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP38N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP38N65M5?

STP38N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP38N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP38N65M5?

For technical support, including STP38N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP38N65M5 requirements.

6.How does Aetrix verify that STP38N65M5 is sourced from the original manufacturer or authorized distributors?

All STP38N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP38N65M5 meets industry standards.

7.What is the process for return or replacement of STP38N65M5?

All STP38N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STP38N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP38N65M5 part is unused and in its original packaging.

Return procedure for STP38N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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