STMicroelectronics STP3LN80K5

Overview

STP3LN80K5 from STMicroelectronics is an N-channel 800 V, 2.75 Ω (typ.) MDmesh K5 Power MOSFET in IPAK (TO-251) package, rated for 2 A continuous drain current at 25 °C and 1.25 A at 100 °C, with 2.63 nC total gate charge and 155 mJ single-pulse avalanche energy - deployed in high-voltage AC-DC adapters and industrial SMPS.

For engineers reviewing the STP3LN80K5 datasheet, STP3LN80K5 pinout, STP3LN80K5 application, or STP3LN80K5 equivalent, this device delivers ultra-low R_DS(on) × area and industry-leading FoM for compact, high-efficiency 600–800 V switching stages where gate drive loss and thermal density are critical selection criteria.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to achieve 800 V breakdown voltage with 2.75 Ω typ. R_DS(on) at V_GS = 10 V and ID = 1 A, supported by 0.91 nC Q_gs and 1.53 nC Q_gd. Its 4.5 V/ns diode recovery dv/dt rating and 50 V/ns MOSFET dv/dt ruggedness enable robust operation in hard-switched PFC and resonant LLC topologies.

The device integrates a Zener-protected gate and is 100% avalanche tested to 0.7 A repetitive I_AR. Its 2.78 °C/W R_thJC and low C_iss (102 pF) support high-frequency operation up to 200 kHz while maintaining SOA integrity under unclamped inductive loads.

Key Specifications

Pinout & Package

IPAK (TO-251) type C package: 3-pin surface-mount outline with exposed drain tab (pin 2) for thermal and electrical connection; lead-free, RoHS-compliant ECOPACK2 grade.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW3NK80Z and IPP60R190C7, STP3LN80K5 uniquely balances 800 V rating, sub-3 Ω on-resistance, and ultra-low gate charge-making it optimal for space-constrained, high-efficiency 800 V switching where thermal density and dv/dt immunity are decisive.

Availability

STP3LN80K5 is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STP3LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP3LN80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-density, high-efficiency 600–800 V switching applications including PFC, resonant converters, and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP3LN80K5 supports 1.25 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10978 Rev 3. This rating reflects thermal derating due to junction-to-case resistance (2.78 °C/W) and safe operating area constraints at elevated temperatures.

Does this MOSFET include integrated gate protection?

Yes - the STP3LN80K5 features an integrated Zener diode between gate and source, providing ±30 V clamping to protect against ESD and gate overvoltage events. This eliminates the need for external gate protection components in most board-level implementations.

Can STP3LN80K5 replace STU3LN80K5 in existing designs?

Yes - STP3LN80K5 and STU3LN80K5 share identical electrical specifications, pinout, package (IPAK), and thermal characteristics per ST's DS10978 Rev 3. The STP variant is the standard production version; STU denotes tape-and-reel packaging for automated assembly, not functional differentiation.

What is the typical reverse recovery charge of the body diode?

The body diode's typical reverse recovery charge (Q_rr) is 0.8 µC at T_J = 25 °C and 1.2 µC at T_J = 150 °C, measured under ISD = 2 A, di/dt = 100 A/µs, and V_DD = 60 V conditions (Table 7). This low Q_rr reduces switching loss in synchronous rectification and bidirectional topologies.