STMicroelectronics STP3N62K3

Overview

STP3N62K3 from STMicroelectronics is an N-channel 620 V, 2.5 Ω max, 2.7 A MDmesh™ K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters. It features 100% avalanche testing, 9 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STP3N62K3 datasheet, STP3N62K3 pinout, STP3N62K3 application, or STP3N62K3 equivalent, this page delivers verified electrical ratings, thermal resistance (6.25 °C/W junction-to-case), diode recovery performance (190 ns trr at 25 °C), and real-world switching behavior under 310 V resistive load conditions.

Technical Context

This device employs ST's MDmesh™ K3 vertical superjunction architecture to achieve low R_DS(on) (2.2 Ω typ.) while maintaining high voltage blocking (620 V) and robust unclamped inductive switching capability (E_AS = 100 mJ). Its optimized cell layout reduces intrinsic capacitance (C_iss = 385 pF, C_oss = 55 pF) and improves diode reverse recovery (Q_rr = 825 nC).

The integrated back-to-back gate-source Zener diodes (V_(BR)GSO = 30 V) provide ESD protection (2.5 kV HBM), eliminating external clamping components. The TO-220FP package enables compact heatsink mounting with 20 W total dissipation at T_C = 25 °C and safe operation up to 150 °C junction temperature.

Key Specifications

Pinout & Package

STP3N62K3 uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin single-row configuration, and 20 W power dissipation rating at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STD3N62K3 and STU3N62K3, STP3N62K3 trades higher thermal resistance (6.25 °C/W) for superior mechanical isolation and ease of heatsink integration in TO-220FP format-ideal where creepage/clearance and serviceability outweigh raw thermal metrics.

Availability

STP3N62K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver primary switches, and power factor correction circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for STP3N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ K3 product line targets high-efficiency, high-reliability power conversion in 30–500 W offline applications, emphasizing avalanche ruggedness, low gate charge, and reduced EMI through controlled diode recovery.

FAQ

What is the maximum recommended gate drive voltage for STP3N62K3?

The absolute maximum gate-source voltage is ±30 V per datasheet Table 1, but the specified operating range is V_GS = 10 V for R_DS(on) characterization. Driving above 15 V provides no significant R_DS(on) improvement and risks accelerated gate oxide degradation. ST recommends 12 V ±0.5 V for optimal trade-off between on-resistance reduction and long-term reliability.

Does STP3N62K3 require an external gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω to 22 Ω) is required to dampen parasitic oscillation during switching transitions. Datasheet Figure 15 specifies R_G = 4.7 Ω for timing measurements, and the device's intrinsic gate resistance (10 Ω typ.) combined with PCB trace inductance necessitates external damping to prevent ringing that could exceed V_GS limits or cause shoot-through in half-bridge configurations.

Can STP3N62K3 replace STP3NK60Z in existing designs?

No-STP3NK60Z is a 600 V, 2.2 Ω typ. SuperFET II device with different gate threshold (2–4 V vs. STP3N62K3's 3–4.5 V) and significantly higher Q_g (27 nC vs. 13 nC). While voltage/current ratings overlap, the K3's faster switching and lower gate charge demand revised gate drive strength and layout; direct replacement may cause overvoltage stress or thermal runaway due to mismatched dv/dt response.

Is the metal tab of STP3N62K3 electrically connected to any internal terminal?

Yes-the metal tab is internally connected to the Drain (D) terminal. This is confirmed by the TO-220FP mechanical drawings (Figure 27) and absolute maximum ratings table, which list V_ISO = 2500 V RMS from all three leads to external heat sink. Designers must ensure proper insulation between the heatsink and other circuit nodes, or use isolated mounting hardware to avoid short-circuit hazards.