My Inquiry
My Account
STMicroelectronics STP3N80K5
- Part No.:
- STP3N80K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP3N80K5.pdf
- Description:
- MOSFET N-CH 800V 2.5A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:1,841
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STP3N80K5 from STMicroelectronics is an N-channel 800 V, 2.8 Ω (typ), 2.5 A MDmesh K5 Power MOSFET in IPAK (TO-251) package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters where low conduction loss and ultra-low gate charge are critical.
For engineers reviewing the STP3N80K5 datasheet, STP3N80K5 pinout, STP3N80K5 application, or STP3N80K5 equivalent, key selection criteria include RDS(on) × area efficiency, 9.5 nC total gate charge, 100% avalanche ruggedness, Zener-protected gate, and 50 V/ns MOSFET dv/dt ruggedness under 640 V stress.
Technical Context
This device implements ST's MDmesh K5 vertical superjunction architecture to achieve industry-leading figure of merit (RDS(on) × Qg = 26.6 Ω·nC) and 4.5 V/ns diode recovery dv/dt capability with 265 ns trr at 25 °C. Its Zener-protected gate structure enables robust ±30 V gate drive tolerance without external clamping.
The IPAK package delivers 2.08 °C/W junction-to-case thermal resistance and supports PCB-mounted heatsinking via the exposed drain tab. It is rated for 60 W continuous power dissipation at TC = 25 °C and operates across –55 to 150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems without derating. |
| RDS(on) max | 3.5 Ω @ VGS = 10 V, ID = 1 A - Enables <1.75 W conduction loss at 2.5 A DC, reducing heatsink size. |
| Qg | 9.5 nC - Low gate drive energy reduces driver IC loading and switching losses in high-frequency PFC (>100 kHz). |
| EAS | 65 mJ - Confirmed single-pulse avalanche energy allows reliable unclamped inductive switching in flyback/LLC designs. |
| dv/dt ruggedness | 50 V/ns @ VDS ≤ 640 V - Ensures noise immunity and prevents false turn-on during fast transient events. |
| trr | 265 ns @ ISD = 2.5 A, di/dt = 100 A/µs - Minimizes reverse recovery loss and EMI in hard-switched topologies. |
| RthJC | 2.08 °C/W - Supports direct thermal coupling to heatsink for stable operation at full 2.5 A continuous current. |
Pinout & Package
IPAK (TO-251) package with exposed drain tab (pin 2/TAB) for thermal and electrical connection; compact 6.1 mm × 6.6 mm footprint ideal for space-constrained high-voltage layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; Zener-protected to ±30 V; requires <9.5 nC charge for full enhancement. |
| 2 (TAB/D) | Drain (exposed metal tab) | Main high-side power path; electrically and thermally connected to PCB copper pour or heatsink. |
| 3 (S) | Source | Reference node for gate drive; connects to power ground or low-side switch source in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh K5 superjunction structure | Reduces RDS(on) × area by >30% vs prior K3/K4 generations, enabling higher power density in same footprint. |
| 100% avalanche tested | Each unit validated for single-pulse EAS ≥ 65 mJ - eliminates need for external snubbers in inductive switching. |
| Zener-protected gate | Integrated gate-source clamp ensures safe operation with ±30 V rating - removes external TVS requirement in noisy environments. |
| Ultra-low Qgd/Qgs ratio | Qgd = 7.5 nC, Qgs = 1.5 nC - improves Miller immunity and enables faster, more controllable turn-off. |
| Low Coss & Crss | Coss = 14 pF, Crss = 0.6 pF - minimizes capacitive switching loss and improves light-load efficiency in resonant converters. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectification |
|---|---|
|
Use Scenario: Primary-side switch in 300–500 W universal-input offline flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage power switch handling 800 V blocking and 2.5 A peak current at 65–130 kHz. Use Value: 2.8 Ω RDS(on) and 9.5 nC Qg reduce both conduction and switching losses, improving full-load efficiency by ~1.2% over legacy 800 V MOSFETs. |
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1U server PSUs. IC Role / Device Role / Timing Role: High-reliability 800 V switch operating at elevated ambient temperatures up to 85 °C. Use Value: 2.08 °C/W RthJC and 150 °C TJ(max) enable stable 2.5 A continuous operation without forced air cooling. |
| Lighting Ballasts & HID Drivers | Industrial Motor Drives (Auxiliary Stages) |
|
Use Scenario: Half-bridge switch in electronic ballasts for 250–1000 W HID lamps. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged device managing high dv/dt transients during lamp ignition. Use Value: 50 V/ns MOSFET dv/dt ruggedness and 265 ns trr suppress false triggering and reduce EMI filter burden. |
Use Scenario: DC bus protection or auxiliary SMPS switch in variable frequency drives and PLC power modules. IC Role / Device Role / Timing Role: High-voltage isolation switch in auxiliary 24 V/48 V isolated supplies powering gate drivers and logic. Use Value: 800 V VDS rating and 1 µA IDSS ensure long-term reliability under sustained DC bus overvoltage conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STF3N80K5 | Floating TO-220FP package (no isolated tab); identical die, RDS(on), Qg, and avalanche rating. | Better suited for through-hole prototyping or low-volume assemblies where heatsink mounting is via screw. | Select when mechanical mounting flexibility outweighs PCB thermal integration needs. |
| STD3N80K5 | TO-252 (DPAK) package; same electrical specs but RthJC = 3.0 °C/W and lower power handling (45 W). | Preferred for cost-sensitive, lower-power (<200 W) consumer adapters where board space is constrained but thermal margin is relaxed. | Choose only if peak power ≤ 200 W and PCB layout cannot accommodate IPAK thermal pad. |
Compared with STF3N80K5 and STD3N80K5, STP3N80K5 offers superior thermal performance (2.08 vs 3.0 °C/W) and direct PCB heatsinking-critical for high-power density, convection-cooled industrial designs requiring >300 W output.
Availability
STP3N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSU auxiliary stages, and lighting ballast designs requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for STP3N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with strong manufacturing control and AEC-Q100/101 qualification capabilities.
The MDmesh K5 product line targets high-efficiency, high-voltage power conversion-specifically engineered for >800 V applications demanding best-in-class RDS(on) × Qg FoM and rugged avalanche behavior.
FAQ
Is STP3N80K5 pin-compatible with STP3NK80Z or STP3NK80ZFP?
No. STP3N80K5 uses IPAK (TO-251) with drain-tab pinout (G-D-S), while STP3NK80Z uses TO-220 (G-D-S) and STP3NK80ZFP uses TO-220FP (G-S-D). Pin order, thermal pad configuration, and gate threshold (4 V typ vs 3–5 V) differ-direct replacement requires PCB and driver redesign.
What is the maximum recommended gate resistor for hard-switched 100 kHz operation?
A 4.7 Ω gate resistor is validated per datasheet Figure 18 for 100 kHz switching with 10 V drive. At this value, measured td(off) = 20.5 ns and tf = 25 ns ensure clean turn-off without oscillation, while limiting peak gate current to <2.1 A and maintaining <1.5 W driver dissipation.
Does STP3N80K5 require external gate protection in a 230 VAC offline flyback?
No. The integrated Zener-protected gate withstands ±30 V, exceeding typical gate drive overshoot in well-damped flyback circuits. External TVS is unnecessary unless layout introduces >30 V ringing due to poor gate loop inductance control.
Can STP3N80K5 replace STW20NK80Z in a 600 W PFC boost stage?
Yes, with validation. Both are 800 V N-channel MOSFETs, but STP3N80K5 offers lower RDS(on) (2.8 Ω vs 3.5 Ω typ) and Qg (9.5 nC vs 12.5 nC), improving efficiency. Thermal design must confirm IPAK's 2.08 °C/W RthJC meets PFC thermal budget under worst-case 40 °C ambient.
STP3N80K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH5™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 130 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP3N80K5 FAQ
1.How can I place an order for STP3N80K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP3N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP3N80K5 reliable?
The price and inventory of STP3N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP3N80K5 is usually 5 days.
3.What payment methods are accepted for STP3N80K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP3N80K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP3N80K5?
STP3N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP3N80K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP3N80K5?
For technical support, including STP3N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP3N80K5 requirements.
6.How does Aetrix verify that STP3N80K5 is sourced from the original manufacturer or authorized distributors?
All STP3N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP3N80K5 meets industry standards.
7.What is the process for return or replacement of STP3N80K5?
All STP3N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP3N80K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP3N80K5 part is unused and in its original packaging.
Return procedure for STP3N80K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STP3N80K5 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
