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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP3NK100Z

Name: STP3NK100Z
Brand: STMicroelectronics
SKU: STP3NK100Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP3NK100Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP3NK100Z.pdf

Description:: MOSFET N-CH 1000V 2.5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP3NK100Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in DPAK (TO-252) package, rated for 1000 V drain-source voltage, 5.4 Ω typical R_DS(on), and 2.5 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche-tested ruggedness (E_AS = 110 mJ), and low gate charge (Q_g = 18 nC), enabling reliable high-voltage switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STP3NK100Z datasheet, STP3NK100Z pinout, STP3NK100Z application, or STP3NK100Z equivalent, key selection criteria include verified avalanche energy rating, Zener-protected gate structure, DPAK thermal resistance (R_thJC = 1.39 °C/W), intrinsic capacitance profile (C_iss = 601 pF), and diode recovery performance (t_rr = 584 ns at T_J = 25 °C).

Technical Context

This device implements ST's SuperMESH process-a refined iteration of PowerMESH-optimized to reduce on-resistance while maintaining robust high-voltage integrity. Its Zener-protected gate structure clamps transient overvoltage during fast switching, eliminating external gate protection components in flyback and resonant converters.

The MOSFET features tightly controlled dynamic parameters: C_oss = 53 pF, C_rss = 12 pF, and Q_gd/Q_gs ratio of ~2.56, supporting stable hard-switching operation up to 500 V bus with minimal Miller-induced shoot-through risk. Its source-drain diode exhibits V_SD = 1.6 V at I_SD = 2.5 A and t_rr < 630 ns across full temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1000 V - supports primary-side switching in universal-input (85–265 V_AC) offline power supplies without derating
R_DS(on) max	6.0 Ω - ensures ≤15 W conduction loss at 2.5 A, compatible with thermally constrained DPAK mounting
I_D cont. @ T_C=25°C	2.5 A - defines maximum steady-state load current before thermal saturation in PCB-mounted configuration
E_AS	110 mJ - quantifies unclamped inductive switching energy absorption without failure, critical for flyback snubberless design
dv/dt capability	4.5 V/ns - enables stable operation under high-slew-rate transients in PFC and half-bridge topologies
Q_g	18 nC - determines gate drive power requirement (~180 µW per MHz at 10 V swing) for efficient PWM control
t_rr	584 ns - limits reverse recovery losses in synchronous rectification and reduces EMI generation in high-frequency converters

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heatsink interface via exposed drain tab; 3-terminal configuration with standardized footprint per Figure 21 (DS5252 Rev 5, p.12); JEDEC-compliant lead finish; RoHS-compliant ECOPACK2 grade.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±30 V bias; Zener-clamped to ±20 V internally for ESD and transient immunity
2 (TAB/D)	Drain (exposed tab)	Main high-voltage power path; electrically connected to case for direct heatsinking; carries full load current and switching transients
3 (S)	Source	Reference node for gate drive; forms return path for load current and body diode conduction; tied to PCB ground plane for noise control

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥110 mJ at T_J = 25 °C - eliminates screening failures in high-energy inductive loads
Zener-protected gate	Integrated bidirectional Zener (±20 V clamping) - removes need for external gate resistors or TVS diodes in cost-sensitive designs
SuperMESH process	Reduces R_DS(on) by ~25% vs legacy PowerMESH while preserving breakdown integrity - improves efficiency in 100–500 kHz SMPS
Low C_iss/C_oss ratio	C_iss = 601 pF, C_oss = 53 pF - minimizes capacitive turn-on loss and enhances zero-voltage switching margin in resonant topologies
High dv/dt immunity	4.5 V/ns rated - sustains rapid voltage transitions without false turn-on, critical for high-side switching in half-bridge configurations

Applications

Offline AC-DC Adapters

Flyback SMPS Primary Switch

Use Scenario: Universal-input (85–265 V_AC) 15–30 W adapter with primary-side regulation.

IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM) flyback converter; handles 650–800 V peak drain stress during startup and line surges.

Use Value: Zener gate protection prevents latch-up during 1 kV surge events; 110 mJ E_AS absorbs leakage inductance spikes without snubber, reducing BOM count by two components.

Use Scenario: Isolated 5–12 V/2 A output supply for industrial controllers with reinforced insulation.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 65 kHz; subjected to repetitive unclamped inductive switching during MOSFET turn-off.

Use Value: Verified avalanche ruggedness enables snubberless design; 4.5 V/ns dv/dt rating ensures no spurious turn-on during 500 V/ns ringing on transformer primary.

LED Driver Ballasts

Industrial HV DC-DC Converters

Use Scenario: Constant-current LED driver for street lighting (230 V_AC input, 72 V_LED string).

IC Role / Device Role / Timing Role: Active switch in buck-boost or SEPIC topology; conducts 1.2 A average current with 2.5 A peak pulses.

Use Value: Low Q_g (18 nC) reduces gate drive loss at 100 kHz switching; integrated body diode (V_SD = 1.6 V) supports synchronous rectification in boost phase.

Use Scenario: 48 V to 380 V isolated DC-DC stage in battery energy storage systems.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge; exposed drain tab directly mounted to heatsink for 90 W dissipation.

Use Value: R_thJC = 1.39 °C/W enables 100 °C junction rise with 70 °C case temp; 1000 V rating avoids series stacking in 400 V bus applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK100ZFP	Same die, FP (TO-220FP) package; R_thJC = 1.0 °C/W; higher creepage/clearance; through-hole mounting	Better thermal performance but larger footprint; requires soldering and mechanical fastening	Select when board space allows and >100 W dissipation is needed; not drop-in for DPAK layout
IXTP3N100D2	1000 V, 6.5 Ω R_DS(on), 2.5 A; no integrated Zener; C_iss = 650 pF; t_rr = 650 ns	Lacks gate Zener protection; requires external clamping; slightly higher switching loss	Choose only if gate protection is implemented externally and lower cost outweighs design complexity

Compared with STP3NK100Z, STP3NK100ZFP offers superior thermal handling in high-power through-hole assemblies, while IXTP3N100D2 trades integrated protection for marginal cost reduction-neither matches the DPAK-compatible Zener-robustness and 110 mJ avalanche rating of the original.

Availability

STP3NK100Z is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback SMPS primary switches, and industrial HV DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STP3NK100Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP3NK100Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-reliability, high-voltage switching in energy-efficient offline power conversion where avalanche ruggedness and gate protection are non-negotiable.

FAQ

Is STP3NK100Z pin-to-pin compatible with STD3NK100Z?

Yes - STP3NK100Z and STD3NK100Z share identical DPAK (TO-252) pinout (G-D-S), same electrical specifications (1000 V, 2.5 A, 5.4 Ω typ.), and Zener-protected gate structure. The 'P' suffix denotes tape-and-reel packaging; 'D' indicates tube packaging. Both use the same die and qualify to the same DS5252 datasheet revision.

What is the maximum safe operating temperature for continuous operation?

The STP3NK100Z has an operating junction temperature range of –55 °C to 150 °C. For continuous 2.5 A operation, case temperature must be held ≤100 °C to stay within SOA limits - achievable with 1.39 °C/W thermal resistance and ≥10 cm² copper pour on FR-4 PCB per manufacturer's recommended footprint.

Does the integrated Zener protect against both positive and negative gate transients?

Yes - the internal gate-body Zener diode is bidirectional, clamping to approximately ±20 V. This protects against both positive overvoltage (e.g., Miller spike) and negative transients (e.g., undershoot during fast turn-off), eliminating need for external gate clamp diodes in most flyback and LLC designs.

Can STP3NK100Z replace STW3NK100Z in existing designs?

No - STW3NK100Z uses TO-247 package (R_thJC = 0.8 °C/W, 3-pin straight lead), while STP3NK100Z is DPAK (TO-252). Though electrically identical, the mechanical form factor, thermal path, and PCB footprint differ significantly; replacement requires layout revision and thermal revalidation.

STP3NK100Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 601 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP3NK100Z FAQ

1.How can I place an order for STP3NK100Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP3NK100Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP3NK100Z reliable?

The price and inventory of STP3NK100Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP3NK100Z is usually 5 days.

3.What payment methods are accepted for STP3NK100Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP3NK100Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP3NK100Z?

STP3NK100Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP3NK100Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP3NK100Z?

For technical support, including STP3NK100Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP3NK100Z requirements.

6.How does Aetrix verify that STP3NK100Z is sourced from the original manufacturer or authorized distributors?

All STP3NK100Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP3NK100Z meets industry standards.

7.What is the process for return or replacement of STP3NK100Z?

All STP3NK100Z units undergo pre-shipment inspection (PSI). If there is an issue with STP3NK100Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP3NK100Z part is unused and in its original packaging.

Return procedure for STP3NK100Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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