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STMicroelectronics STP3NK60Z

Part No.:
STP3NK60Z
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP3NK60Z.pdf
Description:
MOSFET N-CH 600V 2.4A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,867

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Product details

Overview

STP3NK60Z from STMicroelectronics is a Zener-protected N-channel SuperMESH™ Power MOSFET in TO-220 package, rated for 600 V drain-source voltage, 3.2 Ω typical RDS(on), and 2.4 A continuous drain current at TC = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance, and integrated gate-source Zener protection - deployed in offline SMPS, AC-DC adapters, and industrial motor control inverters.

For engineers reviewing the STP3NK60Z datasheet, STP3NK60Z pinout, STP3NK60Z application, or STP3NK60Z equivalent, key selection considerations include its 600 V blocking rating, thermal resistance (Rthj-case = 6.25 °C/W), gate charge (Qg = 11.8 nC), source-drain diode recovery (trr = 306 ns), and built-in ±30 V gate-source Zener clamping.

Technical Context

This device implements ST's SuperMESH™ trench-gate process to reduce on-resistance while maintaining ruggedness in high-voltage switching. Its gate structure minimizes Qg and Ciss (311 pF), enabling fast switching with low drive loss in hard-switched topologies.

The integrated back-to-back gate-source Zener diodes provide ±30 V clamping, eliminating external TVS requirements. Avalanche robustness (EAS = 150 mJ) and 4.5 V/ns dv/dt immunity support reliable operation under inductive load transients and line surges.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Enables direct connection to 400 V DC bus or 230 V AC mains without cascading devices.
RDS(on) typ. 3.2 Ω - Delivers <1.8 W conduction loss at 2.4 A, supporting thermally constrained TO-220 layouts.
ID cont. (TC=25°C) 2.4 A - Sustains full-load current in compact 20–30 W offline converters without derating.
Qg 11.8 nC - Reduces gate driver power demand and enables use of low-cost bipolar or CMOS drivers.
trr 306 ns - Limits reverse recovery loss during hard commutation in flyback and resonant LLC stages.
EAS 150 mJ - Withstands single-pulse inductive energy without failure, simplifying SOA design in motor drives.
dv/dt immunity 4.5 V/ns - Prevents spurious turn-on during fast voltage transients in high-noise industrial environments.

Pinout & Package

STP3NK60Z uses a standard TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when mounted to a heatsink.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Power return path for drain current Low-impedance connection to PCB ground plane; carries full load current and must be routed with wide copper.
2 (Gate) Control electrode for channel conduction High-impedance input requiring <12 nC charge; sensitive to ESD and noise - needs local RC snubber or ferrite bead.
3 (Drain) Main high-voltage power terminal Internally bonded to metal tab; electrically tied to heatsink unless insulated - critical for creepage/clearance compliance.

Key Features

Feature Design Value
Zener-protected gate ±30 V clamping eliminates need for external gate protection components and improves system-level ESD robustness (2.1 kV HBM).
100% avalanche tested Guarantees single-pulse ruggedness up to 150 mJ - removes need for external snubbers in inductive switching applications.
Extremely high dv/dt capability 4.5 V/ns rating prevents false triggering during fast voltage transitions in PFC and half-bridge circuits.
Low intrinsic capacitance Ciss = 311 pF and Crss = 8 pF reduce Miller effect, enabling stable 100+ kHz switching with minimal gate oscillation.
SuperMESH™ technology Optimized trench geometry achieves 3.2 Ω RDS(on) at 600 V - 25% lower than prior PowerMESH™ generation for same die size.

Applications

AC-DC Adapter Primary Switch Industrial Motor Control Inverter

Use Scenario: 24 W universal-input offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: Main power switch handling 600 V DC link, modulated by PWM controller (e.g., VIPer06).

Use Value: Low Qg (11.8 nC) reduces gate driver losses; Zener protection avoids external clamp diodes, cutting BOM cost by $0.08/unit.

Use Scenario: 3-phase inverter stage driving 1/4 HP BLDC motor in HVAC fan module.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET half-bridge, switching at ≤20 kHz with 120° commutation.

Use Value: 150 mJ EAS withstands inductive kickback without desaturation detection; 4.5 V/ns dv/dt rating ensures noise immunity in EMI-heavy factory environments.

LED Driver Secondary Side Switch UPS Inverter Output Stage

Use Scenario: Isolated buck-boost LED driver for street lighting (72 V output, 1.2 A).

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side active clamp topology.

Use Value: Low RDS(on) (3.2 Ω) cuts conduction loss vs. Schottky diode; integrated Zener allows direct gate drive from transformer winding without bias supply.

Use Scenario: Line-interactive UPS delivering 600 VA with pure sine-wave inverter output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage, switching at 20 kHz with dead-time control.

Use Value: 2.4 A ID rating supports peak surge currents up to 9.6 A (IDM); TO-220 package enables direct heatsink mounting for thermal stability during extended battery backup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP3NK60ZFP Same die, TO-220FP package with shorter leads and reduced height; Rthj-case = 2.78 °C/W (vs. 6.25 °C/W). Better thermal performance in space-constrained designs but requires different mounting hardware and footprint. Select when board height is limited and heatsink interface area permits FP-style clip mounting.
STD3NK60ZT4 DPAK package; identical electrical specs but Rthj-case = 2.78 °C/W and lower ID derating above 70 °C ambient. Suitable for surface-mount automated assembly; not recommended for >1.5 A continuous loads without large copper pour. Choose for reflow-compatible designs where manual TO-220 insertion is undesirable and thermal budget allows.

Compared with STP3NK60Z, STP3NK60ZFP offers superior thermal resistance but demands revised mechanical layout, while STD3NK60ZT4 enables SMT production at the cost of reduced power handling margin in sealed enclosures.

Availability

STP3NK60Z is available at Aetrix Electronics and suitable for offline SMPS, industrial motor control inverters, LED drivers, and UPS systems requiring stable component supply across long-lifecycle programs.

Supply support for STP3NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STP3NK60Z belongs to the SuperMESH™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 500–700 V applications where avalanche ruggedness and gate protection are mandatory.

FAQ

Is STP3NK60Z RoHS-compliant and halogen-free?

Yes. STP3NK60Z is manufactured in STMicroelectronics' ECOPACK®-compliant TO-220 package, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 for halogen-free materials. Full compliance documentation is available via ST's quality portal using order code STP3NK60Z.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. For continuous operation at full 2.4 A drain current, case temperature must remain ≤100 °C per datasheet derating curves. With Rthj-case = 6.25 °C/W, this requires a heatsink thermal resistance of ≤26 °C/W at 25 °C ambient.

Can STP3NK60Z replace STP4NK60Z in existing designs?

No - STP4NK60Z has 2.4 Ω typical RDS(on) and 4 A ID, while STP3NK60Z is rated at 3.2 Ω and 2.4 A. Substitution would increase conduction loss by ~33% and reduce current headroom; thermal validation and SOA re-analysis are required before any change.

Does the built-in Zener protect against both positive and negative gate transients?

Yes. The integrated back-to-back Zener diodes provide symmetrical ±30 V clamping between gate and source, protecting against both positive overvoltage (e.g., Miller spike) and negative transients (e.g., shoot-through induced reverse bias), verified per JEDEC JESD22-A114F HBM testing.

STP3NK60Z Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
11.8 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
311 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP3NK60Z FAQ

1.How can I place an order for STP3NK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP3NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP3NK60Z reliable?

The price and inventory of STP3NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP3NK60Z is usually 5 days.

3.What payment methods are accepted for STP3NK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP3NK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP3NK60Z?

STP3NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP3NK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP3NK60Z?

For technical support, including STP3NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP3NK60Z requirements.

6.How does Aetrix verify that STP3NK60Z is sourced from the original manufacturer or authorized distributors?

All STP3NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP3NK60Z meets industry standards.

7.What is the process for return or replacement of STP3NK60Z?

All STP3NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STP3NK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP3NK60Z part is unused and in its original packaging.

Return procedure for STP3NK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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