STMicroelectronics STP3NK80Z

Overview

STP3NK80Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 3.6 Ω typical R_DS(on), and 2.5 A continuous drain current at T_C = 25 °C, designed for high-voltage switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STP3NK80Z datasheet, STP3NK80Z pinout, STP3NK80Z application, or STP3NK80Z equivalent, key selection criteria include avalanche ruggedness (170 mJ E_AS), dv/dt immunity (4.5 V/ns), gate charge (19 nC), and DPAK thermal resistance (1.78 °C/W).

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high breakdown integrity and fast switching. Its integrated gate-source Zener diode provides intrinsic overvoltage protection without external components.

The MOSFET delivers robust unclamped inductive switching performance with 2.5 A repetitive avalanche current and supports high-speed operation via low capacitance (C_iss = 485 pF, C_oss = 57 pF) and optimized gate drive dynamics (Q_gd/Q_gs ratio ≈ 3.4).

Key Specifications

Pinout & Package

STP3NK80Z is housed in a DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The case serves as the drain terminal, enabling low-inductance high-power routing and simplified PCB layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STF3NK80Z and STD3NK80ZT4, STP3NK80Z offers optimal balance of surface-mount compatibility, thermal performance (1.78 °C/W), and production readiness - making it ideal for space-constrained, high-volume AC-DC power supplies.

Availability

STP3NK80Z is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, and industrial LED drivers requiring stable component supply across extended product lifecycles.

Supply support for STP3NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, and power management applications since 1987.

STP3NK80Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 800 V.

FAQ

What is the maximum safe operating temperature for STP3NK80Z?

The junction temperature must not exceed 150 °C per absolute maximum ratings. With R_thJC = 1.78 °C/W and 70 W P_TOT, case temperature must stay below 25.4 °C for full power - typically achieved using ≥25 cm² 2 oz copper pour. Derating is required above T_C = 100 °C, where I_D drops to 1.57 A.

Does STP3NK80Z require an external gate resistor?

Yes - a gate resistor (typically 4.7–22 Ω) is required to dampen ringing caused by L_g–C_iss resonance and control dV/dt during turn-on/off. The datasheet specifies switching times with R_G = 4.7 Ω; omitting it risks shoot-through, EMI, and gate oscillation.

Can STP3NK80Z replace STP3NK90Z in existing designs?

No - STP3NK90Z has 900 V rating, higher R_DS(on) (4.5 Ω), and different gate threshold (2.5–3.5 V). Substituting STP3NK80Z risks breakdown in 900 V applications and alters gate drive timing due to higher V_GS(th) (3.0–4.5 V) and lower Q_g.

Is the source-drain body diode suitable for freewheeling in synchronous rectification?

No - the body diode has V_SD = 1.6 V at 2.5 A and t_rr = 384 ns, resulting in high conduction loss and reverse recovery loss. It is intended only for clamping and protection; external Schottky or MOSFET synchronous rectifiers are required for efficient freewheeling.