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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP3NK90Z

Name: STP3NK90Z
Brand: STMicroelectronics
SKU: STP3NK90Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP3NK90Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP3NK90Z.pdf

Description:: MOSFET N-CH 900V 3A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP3NK90Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 900 V drain-source voltage, 4.8 Ω maximum R_DS(on) at V_GS = 10 V and I_D = 1.5 A, and 3 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested operation, and low gate charge (22.7 nC) for robust high-voltage switching in offline SMPS and lighting ballasts.

For engineers reviewing the STP3NK90Z datasheet, STP3NK90Z pinout, STP3NK90Z application, or STP3NK90Z equivalent, this device is selected for high-reliability 900 V flyback and resonant converters where Zener-protected gate integrity, low C_iss (590 pF), and repetitive avalanche energy (180 mJ) are critical design requirements.

Technical Context

This MOSFET implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high breakdown voltage and ruggedness. Its Zener-protected gate structure enables ±30 V V_GS rating and intrinsic ESD immunity (4 kV HBM).

The device features low dynamic capacitances (C_oss = 63 pF, C_rss = 13 pF) and fast switching (t_d(off) = 45 ns, t_f = 18 ns) under 450 V/1.5 A resistive load conditions with 4.7 Ω gate resistance, supporting high-frequency operation up to 100 kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports direct rectified universal AC input (up to 650 VDC) with margin for surge and ringing.
R_DS(on) max	4.8 Ω - determines conduction loss at 3 A; typ. 3.6 Ω reduces thermal stress in TO-252 package.
I_D cont.	3 A @ T_C = 25 °C - defines maximum steady-state current before derating; drops to 1.89 A at 100 °C.
E_AS	180 mJ - enables unclamped inductive switching without failure; critical for PFC and flyback snubberless designs.
dv/dt	4.5 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients in high-side configurations.
Q_g	22.7 nC - governs gate drive power and switching speed; low value eases use with standard 1 W gate drivers.
R_thJC	1.38 °C/W - allows ~65 °C junction rise at 90 W dissipation; requires adequate copper area on DPAK mounting pad.

Pinout & Package

Supplied in DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; Zener-protected to ±30 V; requires <10 nF local decoupling for noise immunity.
Pin 2 (D / TAB)	Drain terminal (exposed metal tab)	Primary high-voltage node; electrically and thermally connected to PCB copper pour; must be isolated from other layers.
Pin 3 (S)	Source terminal	Reference node for gate drive; connects to power ground or source of upstream switch; carries full load current.

Key Features

Feature	Design Value
Zener-protected gate	Enables ±30 V V_GS rating and 4 kV HBM ESD tolerance without external clamping diodes.
SuperMESH technology	Reduces R_DS(on) by ~25% vs prior PowerMESH while preserving 900 V V_DS and avalanche ruggedness.
Low C_iss and C_rss	590 pF input capacitance and 13 pF reverse transfer capacitance minimize Miller effect and improve switching stability.
100% avalanche tested	Every unit validated for repetitive 180 mJ single-pulse avalanche energy at T_J = 25 °C - no screening exceptions.
Optimized for hard switching	Fast, predictable turn-off (t_d(off) = 45 ns) and low Q_gd/Q_gs ratio (12 nC / 4.2 nC) suppress oscillation in high-dv/dt environments.

Applications

LED Streetlight Driver

Industrial AC-DC Adapter

Use Scenario: 900 V flyback converter powering 100–200 W LED arrays from 230 VAC mains with active PFC front-end.

IC Role / Device Role / Timing Role: Main high-side switching element handling full primary current and voltage stress during each switching cycle.

Use Value: Zener protection prevents gate oxide failure during line surges; 180 mJ E_AS eliminates need for snubber in discontinuous conduction mode.

Use Scenario: 65 W open-frame industrial adapter accepting 85–265 VAC input with reinforced isolation and >5-year MTBF requirement.

IC Role / Device Role / Timing Role: Primary-side power switch in quasi-resonant flyback topology operating at 60–100 kHz.

Use Value: Low C_oss (63 pF) and C_rss (13 pF) enable zero-voltage switching over wide load range; 4.5 V/ns dv/dt rating avoids spurious turn-on.

Electronic Ballast for HID Lamps

High-Voltage DC-DC Converter

Use Scenario: 250–400 W magnetic HID lamp ballast with igniter circuit generating >5 kV pulses and sustained 300–400 V lamp voltage.

IC Role / Device Role / Timing Role: Half-bridge upper switch sustaining 900 V blocking and delivering controlled current pulses to lamp.

Use Value: 100% avalanche testing ensures reliability under repeated lamp ignition stress; R_DS(on) typ. 3.6 Ω limits conduction loss at 3 A peak.

Use Scenario: Isolated 48 V to 380 V DC-DC boost converter for telecom power shelf with 92% efficiency target and 100 kHz switching.

IC Role / Device Role / Timing Role: High-side switch in two-switch forward or active-clamp forward topology.

Use Value: Low Q_g (22.7 nC) reduces gate driver losses; 1.38 °C/W R_thJC enables compact heatsinking on 1-in² 2 oz copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK90ZFP	Same die, FP (TO-220FP) package with insulated tab; R_thJC = 1.25 °C/W; higher creepage/clearance.	Preferred where mechanical mounting to heatsink without isolation is impractical or safety spacing >4 mm required.	Select when board space permits larger TO-220 footprint and enhanced creepage is mandated by IEC 62368-1.
FQP9N90C	900 V, 4.5 Ω max R_DS(on), but no Zener gate protection; E_AS = 120 mJ; C_iss = 720 pF.	Lacks integrated gate Zener - requires external 18 V clamp; lower avalanche energy limits unclamped inductive stress tolerance.	Acceptable only if gate drive includes discrete clamping and system-level avalanche stress is below 120 mJ.

Compared with STP3NK90Z, STP3NK90ZFP offers better thermal performance and isolation but increases board area, while FQP9N90C trades gate protection and avalanche margin for slightly lower R_DS(on) - making STP3NK90Z optimal for compact, high-ruggedness 900 V designs.

Availability

STP3NK90Z is available at Aetrix Electronics and suitable for LED streetlight drivers, industrial AC-DC adapters, and electronic HID ballasts requiring stable component supply across multi-year production cycles.

Supply support for STP3NK90Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating above 600 V DC link voltage.

FAQ

What is the maximum safe operating temperature for STP3NK90Z?

The junction temperature must not exceed 150 °C. With R_thJC = 1.38 °C/W and P_TOT = 90 W at T_C = 25 °C, the case temperature must be held ≤85 °C under full load to maintain 65 °C margin. Derating begins linearly above 25 °C case temperature per the datasheet SOA curve.

Does STP3NK90Z require external gate protection?

No - it integrates a monolithic Zener diode between gate and source, enabling ±30 V V_GS rating and eliminating need for external clamping components. This protection is verified across 100% of production units and remains effective up to T_J = 150 °C.

Can STP3NK90Z replace STP3NK90ZFP in the same PCB layout?

No - STP3NK90Z uses DPAK (TO-252) with exposed drain tab on Pin 2, while STP3NK90ZFP uses TO-220FP with insulated tab and different pinout (G-D-S vs G-S-D). Footprint, thermal pad, and mounting hole patterns are incompatible; redesign is required.

What is the typical gate threshold voltage and how does it affect drive design?

V_GS(th) is specified from 3.00 V to 4.50 V (typ. 3.75 V) at I_D = 50 µA. To ensure full enhancement, gate drive must deliver ≥10 V with sufficient current (≥100 mA peak) to overcome 22.7 nC total charge within <100 ns - requiring low-impedance path and local 100 nF ceramic decoupling.

STP3NK90Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 22.7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP3NK90Z FAQ

1.How can I place an order for STP3NK90Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP3NK90Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP3NK90Z reliable?

The price and inventory of STP3NK90Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP3NK90Z is usually 5 days.

3.What payment methods are accepted for STP3NK90Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP3NK90Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP3NK90Z?

STP3NK90Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP3NK90Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP3NK90Z?

For technical support, including STP3NK90Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP3NK90Z requirements.

6.How does Aetrix verify that STP3NK90Z is sourced from the original manufacturer or authorized distributors?

All STP3NK90Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP3NK90Z meets industry standards.

7.What is the process for return or replacement of STP3NK90Z?

All STP3NK90Z units undergo pre-shipment inspection (PSI). If there is an issue with STP3NK90Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP3NK90Z part is unused and in its original packaging.

Return procedure for STP3NK90Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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