STMicroelectronics STP400N4F6

Overview

STP400N4F6 from STMicroelectronics is an N-channel 40 V, 120 A Power MOSFET in TO-220 package, fabricated using STripFET™ VI DeepGATE™ technology. It delivers 1.7 mΩ max R_DS(on) at V_GS = 10 V, supports 480 A pulsed drain current, and features high avalanche ruggedness for robust switching in high-current DC-DC and motor drive stages.

For engineers reviewing the STP400N4F6 datasheet, STP400N4F6 pinout, STP400N4F6 application, or STP400N4F6 equivalent, key selection criteria include its low gate charge (377 nC), junction-to-case thermal resistance (0.5 °C/W), and suitability for high-efficiency synchronous rectification and battery protection circuits requiring stable 40 V/120 A operation.

Technical Context

This MOSFET employs a proprietary DeepGATE™ gate structure that minimizes gate charge and channel resistance while maintaining high voltage blocking capability. Its 40 V V_DS rating and 120 A continuous drain current (package-limited) target mid-voltage power conversion where conduction loss dominates system efficiency.

The device integrates a robust intrinsic body diode with 1.1 V forward voltage at 120 A and specified reverse recovery parameters (t_rr, Q_rr) for hard-switched topologies. Thermal design is enabled by a low R_thj-case of 0.5 °C/W, allowing direct heatsink mounting in industrial motor controllers and UPS inverters.

Key Specifications

Pinout & Package

TO-220 package (Type A): insulated tab, vertical lead orientation, through-hole mounting. Tab is electrically connected to drain (D). Standard 3-pin layout with source (S), gate (G), and drain (D) terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Compared with IRF1404ZPBF and IXFH40N40P, STP400N4F6 uniquely balances ultra-low on-resistance (1.7 mΩ), industry-standard TO-220 form factor, and optimized gate charge for high-current, thermally constrained 40 V systems-making it optimal for motor drives and battery systems where both conduction and switching losses must be minimized.

Availability

STP400N4F6 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, battery protection, and UPS inverter applications requiring stable component supply and long-term industrial availability.

Supply support for STP400N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–48 V power systems where thermal performance and ruggedness are critical.

FAQ

Is STP400N4F6 suitable for logic-level gate drive?

No. With a gate threshold voltage range of 3–4.5 V and optimal R_DS(on) specified at V_GS = 10 V, STP400N4F6 requires a 10 V gate drive for full enhancement. It is not guaranteed to operate reliably with 3.3 V or 5 V logic-level drivers without significant conduction loss penalty.

What is the maximum safe operating temperature for continuous use?

The device supports continuous operation up to 175 °C junction temperature. However, sustained operation above 150 °C requires derating total power dissipation per the 2 W/°C derating factor beyond 25 °C case temperature, and thermal design must ensure R_thj-case ≤ 0.5 °C/W to avoid exceeding T_j limit.

Does STP400N4F6 have built-in ESD protection?

Yes. The device specifies ±100 nA gate leakage at ±20 V V_GS, indicating integrated gate oxide protection structures. It meets HBM ESD classification per JEDEC JESD22-A114 (≥2 kV), suitable for standard assembly environments without additional gate protection circuitry.

Can STP400N4F6 replace STI400N4F6 in existing designs?

Yes, with mechanical adaptation. Both share identical electrical specs (R_DS(on), V_DS, I_D, Q_g). STP400N4F6 uses TO-220; STI400N4F6 uses I²PAK (TO-262). Pinout is identical (G-D-S), but TO-220 has different mounting hole spacing and tab geometry-PCB layout and heatsink interface must be revised.