STMicroelectronics STP40NS15

Overview

STP40NS15 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 150 V V_DSS, 40 A continuous drain current at T_C = 25 °C, and 0.042 Ω typical R_DS(on). It features extremely high dv/dt capability (9 V/ns), low intrinsic capacitances (C_iss = 2400 pF), and is optimized for high-current switching in isolated DC-DC converters and UPS systems.

For engineers reviewing the STP40NS15 datasheet, STP40NS15 pinout, STP40NS15 application, or STP40NS15 equivalent, key selection criteria include its 150 V breakdown voltage, 40 A thermal-limited conduction, 100 nC total gate charge, avalanche-rated operation (E_AS = 500 mJ), and TO-220 mechanical compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs ST's MESH OVERLAY™ process-a strip-based layout technology delivering lower R_DS(on) and reduced gate charge versus conventional planar structures. Its 0.044–0.052 Ω R_DS(on) at V_GS = 10 V enables efficient conduction in primary-side switching of offline SMPS topologies.

The device supports fast switching with t_d(on) = 25 ns, t_d(off) = 85 ns, and Q_gd = 47 nC, while its 9 V/ns dv/dt rating and unclamped inductive switching capability (I_AR = 40 A, E_AS = 500 mJ) ensure robustness in hard-switched flyback and forward converters.

Key Specifications

Pinout & Package

TO-220 package with vertical power leads, insulated tab, and standardized mounting hole. Thermal resistance R_thj-case = 1.07 °C/W enables direct heatsink attachment via M3 screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IRFP460 and STP36NF15, the STP40NS15 offers a balanced trade-off: lower R_DS(on) than IRFP460 for 150 V use, and higher ruggedness (E_AS = 500 mJ vs. 320 mJ) than STP36NF15-making it optimal for unclamped inductive loads in UPS and industrial SMPS.

Availability

STP40NS15 is available at Aetrix Electronics and suitable for uninterruptible power supplies, isolated DC-DC converters, and industrial motor drives requiring stable component supply and long-term manufacturability assurance.

Supply support for STP40NS15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete power devices, and MEMS sensors.

The STP40NS15 belongs to ST's Power MOSFET portfolio, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and telecom infrastructure where ruggedness and thermal performance are critical.

FAQ

Is STP40NS15 suitable for synchronous rectification?

No-STP40NS15 is a standard N-channel enhancement-mode MOSFET without integrated Schottky body diode optimization or low reverse recovery charge (Q_rr = 200 nC). Its body diode exhibits 270 ns trr and 1.5 A IRRM, making it unsuitable for high-frequency synchronous rectification where fast, soft recovery is required. Use dedicated SR controllers with logic-level MOSFETs instead.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation requires maintaining T_j ≤ 150 °C for reliability. At T_C = 100 °C, the device supports 25 A continuous drain current. Derating follows 0.933 W/°C beyond 25 °C case temperature, and thermal design must account for R_thj-case = 1.07 °C/W and heatsink interface resistance.

Does STP40NS15 have avalanche capability, and how is it specified?

Yes-STP40NS15 is fully rated for repetitive and non-repetitive avalanche. It specifies I_AR = 40 A (repetitive or non-repetitive, pulse width limited by T_jmax) and E_AS = 500 mJ (single-pulse, starting at T_j = 25 °C, V_DD = 50 V, I_D = I_AR). This enables operation in unclamped inductive switching circuits without external snubbers in many UPS and converter applications.

Can STP40NS15 be used in a high-side configuration with bootstrap gate driving?

Yes-its V_GS rating of ±20 V and gate threshold voltage of 2–4 V make it compatible with standard bootstrap gate drivers. However, due to its 110 nC total gate charge and 47 nC Q_gd, careful attention must be paid to bootstrap capacitor sizing and gate resistor selection to ensure sufficient high-side drive voltage (>10 V) across the full duty cycle, especially above 80% duty.