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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP42N60M2-EP

Name: STP42N60M2-EP
Brand: STMicroelectronics
SKU: STP42N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP42N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP42N60M2-EP.pdf

Description:: MOSFET N-CH 600V 34A TO220

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Product details

Overview

STP42N60M2-EP from STMicroelectronics is an N-channel 600 V, 34 A, 0.076 Ω typ. MDmesh™ M2 EP Power MOSFET in TO-220 package, designed for high-frequency switching in SMPS and PFC stages. It delivers low turn-off switching losses (13–14.5 µJ), 100% avalanche tested operation, and Zener-protected gate drive compatibility.

For engineers reviewing the STP42N60M2-EP datasheet, STP42N60M2-EP pinout, STP42N60M2-EP application, or STP42N60M2-EP equivalent, key selection criteria include R_DS(on) at 10 V, C_oss profile (112 pF), Q_g (55 nC), dv/dt ruggedness (50 V/ns), and thermal resistance (R_thj-case = 0.50 °C/W).

Technical Context

This device uses ST's MDmesh™ M2 EP technology with strip layout and optimized vertical structure to achieve low on-resistance and minimized output capacitance nonlinearity. Its C_oss,eq of 454 pF (0–480 V) enables stable energy storage during hard-switching transitions.

The MOSFET features a Zener-protected gate (±25 V rating), 150 °C max junction temperature, and robust unclamped inductive switching capability (E_AS = 800 mJ). Its 96.5 ns t_d(off) and 8 ns t_f support operation above 150 kHz in resonant and quasi-resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin.
R_DS(on) typ.	0.076 Ω @ V_GS = 10 V, I_D = 17 A - Enables <1.2 W conduction loss at 34 A continuous drain current.
Q_g	55 nC - Low gate charge reduces driver power demand and supports high-frequency PWM control.
C_oss	112 pF @ V_DS = 100 V - Low output capacitance minimizes turn-off loss and improves zero-voltage switching (ZVS) feasibility.
E_off	13–14.5 µJ @ V_DD = 400 V, I_D = 2.5–5 A - Very low turn-off energy directly enables >150 kHz operation in LLC and phase-shifted full-bridge converters.
R_thj-case	0.50 °C/W - Allows 250 W dissipation at 25 °C case temperature, supporting high-power density designs without forced cooling.
dv/dt ruggedness	50 V/ns - Sustains fast voltage transients during hard switching without spurious turn-on or latch-up.

Pinout & Package

STP42N60M2-EP is housed in a TO-220 package with isolated tab (Type A), where the metal tab is electrically connected to the drain terminal. The package provides mechanical robustness and thermal performance suitable for industrial-grade power conversion modules.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control input requiring <55 nC charge for full enhancement; Zener-protected to ±25 V.
2 (Lead)	Drain (D)	Main high-side power path; connected to metal tab - requires electrical isolation when mounted to heatsink.
3 (Lead)	Source (S)	Power return and reference node for gate drive; carries full load current (34 A continuous) and diode recovery current (up to 136 A pulsed).

Key Features

Feature	Design Value
Extremely low gate charge	55 nC total gate charge enables efficient driving with standard gate drivers (e.g., STGW30V60DF) at >200 kHz.
Optimized C_oss profile	C_oss,eq = 454 pF over 0–480 V ensures predictable soft-switching behavior and reduced EMI in resonant converters.
Very low turn-off switching losses	E_off ≤ 14.5 µJ at 5 A/400 V allows >150 kHz operation while maintaining <10% switching loss share in PFC stages.
100% avalanche tested	Single-pulse E_AS = 800 mJ at T_j = 25 °C guarantees ruggedness against inductive energy dump in UPS and motor drives.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient stress, eliminating need for external gate clamping in most designs.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3 kW active clamp forward or LLC resonant converter operating at 250 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 34 A peak current and 600 V blocking, synchronized to 250 kHz PWM.

Use Value: Low C_oss (112 pF) and E_off (13 µJ) reduce switching loss by 35% vs. legacy 600 V MOSFETs, enabling >96% efficiency at full load.

Use Scenario: Three-phase PFC front-end in 2 kW telecom rectifier with interleaved boost topology.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 120 kHz, conducting 34 A RMS with 150 °C junction limit.

Use Value: R_thj-case = 0.50 °C/W and 0.076 Ω R_DS(on) allow natural convection cooling, reducing system fan count and acoustic noise.

Uninterruptible Power Supplies (UPS)

Solar Inverters (String-Level)

Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS managing battery charging and inverter backup paths.

IC Role / Device Role / Timing Role: Unclamped inductive switching device subjected to repetitive avalanche events during transfer switching.

Use Value: 100% avalanche-tested design with E_AS = 800 mJ ensures reliable operation under fault conditions without derating.

Use Scenario: MPPT DC-DC converter in string inverters converting 600–1000 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier or primary switch in phase-shifted full-bridge topology.

Use Value: dv/dt ruggedness of 50 V/ns prevents false triggering during fast bus transients common in solar array fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 600 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	R_DS(on) = 0.099 Ω, Q_g = 49 nC, C_oss = 125 pF, TO-220FP package (non-isolated tab)	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but C_oss is less favorable for ZVS.	Select when gate drive capability is limited and thermal interface permits non-isolated mounting.
IXFH42N60X3	R_DS(on) = 0.075 Ω, Q_g = 62 nC, C_oss = 130 pF, TO-247 package, no integrated Zener	Lower R_DS(on) but higher Q_g and C_oss; requires external gate protection and larger heatsink footprint.	Select for highest efficiency in space-constrained TO-247 layouts where gate protection is already implemented.

Compared with IPP60R099C7 and IXFH42N60X3, STP42N60M2-EP offers the best balance of low E_off, Zener-protected gate, and isolated TO-220 thermal interface - making it optimal for cost-sensitive, high-reliability 150–300 kHz industrial SMPS where board-level isolation and avalanche immunity are critical.

Availability

STP42N60M2-EP is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, and uninterruptible power systems requiring stable component supply and long-term production continuity.

Supply support for STP42N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 EP high-voltage power MOSFET product line, engineered specifically for ultra-high-frequency (>150 kHz), high-efficiency AC-DC and DC-DC conversion in compact, thermally constrained systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP42N60M2-EP supports 22 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220 package and ensures safe operation within the 150 °C maximum junction temperature under sustained load.

Does this MOSFET require external gate protection?

No - the STP42N60M2-EP integrates a Zener diode between gate and source, rated for ±25 V, eliminating the need for external gate clamping in standard applications. This simplifies gate driver design and improves reliability in noisy industrial environments.

How does its C_oss,eq value impact resonant converter design?

With C_oss,eq = 454 pF (0–480 V), the device provides predictable and linearized output capacitance behavior across the switching range. This enables accurate dead-time calculation and stable ZVS operation in LLC and half-bridge resonant converters without additional snubbing.

Can STP42N60M2-EP replace STW42N60M2-EP in a TO-247 footprint?

No - STP42N60M2-EP uses a TO-220 package with different pin spacing, mounting hole pattern, and thermal interface (isolated tab vs. TO-247's non-isolated tab). Direct replacement requires PCB redesign, heatsink adaptation, and revalidation of thermal and EMI performance.

STP42N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 87mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP42N60M2-EP FAQ

1.How can I place an order for STP42N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP42N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP42N60M2-EP reliable?

The price and inventory of STP42N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP42N60M2-EP is usually 5 days.

3.What payment methods are accepted for STP42N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP42N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP42N60M2-EP?

STP42N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP42N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP42N60M2-EP?

For technical support, including STP42N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP42N60M2-EP requirements.

6.How does Aetrix verify that STP42N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STP42N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP42N60M2-EP meets industry standards.

7.What is the process for return or replacement of STP42N60M2-EP?

All STP42N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STP42N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP42N60M2-EP part is unused and in its original packaging.

Return procedure for STP42N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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