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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP43N60DM2

Name: STP43N60DM2
Brand: STMicroelectronics
SKU: STP43N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP43N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP43N60DM2.pdf

Description:: MOSFET N-CH 600V 34A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP43N60DM2 from STMicroelectronics is an N-channel 600 V, 34 A, 0.085 Ω typ. MDmesh™ DM2 Power MOSFET in TO-220 package, designed for high-efficiency bridge and ZVS phase-shift converters. It features fast-recovery body diode (trr = 120 ns @ Tj = 25 °C), low gate charge (Qg = 56 nC), and 100% avalanche tested ruggedness (EAS = 800 mJ).

For engineers reviewing the STP43N60DM2 datasheet, STP43N60DM2 pinout, STP43N60DM2 application, or STP43N60DM2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), Qrr minimization for soft-switching topologies, and thermal resistance (Rthj-case = 0.50 °C/W) for conduction-limited power designs.

Technical Context

This device implements ST's MDmesh™ DM2 silicon architecture optimized for high-voltage switching with integrated fast-recovery body diode. Its low Qrr (0.6 µC @ 25 °C) and trr (120 ns) enable reduced switching losses in hard- and soft-switched converters.

The MOSFET supports high dv/dt immunity (50 V/ns) under both diode recovery and MOSFET turn-off conditions, and maintains stable VGS(th) (3–5 V) and RDS(on) across -55 to 150 °C junction range, enabling reliable operation in industrial and server PSU environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 400 V in full-bridge ZVS designs with margin
R_DS(on) max	0.093 Ω - Limits conduction loss to ≤107 W at 34 A continuous (T_case = 25 °C)
Q_g	56 nC - Enables efficient gate drive with <1 W average power at 100 kHz switching
trr / Q_rr	120 ns / 0.6 µC - Reduces reverse recovery loss and EMI in LLC and phase-shifted full-bridge converters
R_thj-case	0.50 °C/W - Allows 250 W dissipation with ≤125 °C case-to-junction rise, supporting forced-air heatsinking
E_AS	800 mJ - Sustains single-pulse inductive energy without failure in unclamped inductive load tests
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate commutation in high-frequency inverters

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal requiring ≤56 nC charge for full enhancement; sensitive to ESD (±25 V rating)
Pin 2 (D)	Drain (Tab)	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
Pin 3 (S)	Source	Power return path and gate reference node; layout critical for minimizing common-source inductance in high-dI/dt switching

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 120 ns @ 25 °C enables zero-voltage switching in resonant topologies without external SiC diode
Low Q_g and C_iss	Qg = 56 nC, Ciss = 2500 pF - reduces gate driver stress and improves efficiency above 100 kHz
Zener-protected gate	Integrated gate oxide protection clamps transients to ±25 V, eliminating need for external gate Zener in most SMPS designs
100% avalanche tested	Each unit validated for 800 mJ single-pulse avalanche energy - ensures robustness in overload and fault conditions
MDmesh™ DM2 silicon	Optimized cell structure delivers 20% lower R_DS(on) × Q_g figure-of-merit vs. prior DM1 generation

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3.3 kW server power supply operating in asymmetric half-bridge topology with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 34 A RMS current at 100–200 kHz with ZVS-assisted turn-on.

Use Value: Low Qrr (0.6 µC) and fast trr (120 ns) minimize dead-time loss and reduce snubber requirements.

Use Scenario: 7.5 kW three-phase VFD driving induction motor with regenerative braking.

IC Role / Device Role / Timing Role: IGBT replacement in 600 V inverter leg, conducting 21 A continuous at 100 °C case temperature.

Use Value: R_thj-case = 0.50 °C/W enables direct heatsink mounting without thermal derating below 21 A.

Solar Microinverter H-Bridge

EV On-Board Charger PFC Stage

Use Scenario: Single-phase 300 W microinverter interfacing PV panel to grid via full-bridge inverter.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification mode with bidirectional current flow during reactive power control.

Use Value: Fast body diode (trr = 120 ns) eliminates need for anti-parallel SiC Schottky, reducing BOM count and cost.

Use Scenario: Two-switch forward PFC stage in 6.6 kW EV on-board charger with 400 V output.

IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz with 34 A peak inductor current and high line transients.

Use Value: dv/dt ruggedness of 50 V/ns prevents false triggering during 400 V bus ringing, improving reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW43N60DM2	Same die, TO-247 package; R_thj-case = 0.40 °C/W, higher ID_pulsed = 136 A	Better thermal performance for >250 W conduction-limited designs; requires larger PCB footprint	Select when thermal headroom is constrained and TO-247 mounting is feasible
IPP60R099C7	650 V CoolMOS™ C7; R_DS(on) = 0.099 Ω, Qg = 45 nC, no integrated fast diode (trr not specified)	Lacks body diode optimization; requires external diode for bidirectional conduction	Select for pure hard-switched topologies where diode recovery is irrelevant and lowest Qg dominates

Compared with STW43N60DM2, this TO-220 variant trades 0.10 °C/W higher thermal resistance for compact size and lower assembly cost; versus IPP60R099C7, it provides verified fast-recovery diode behavior essential for ZVS but with 24% higher Qg.

Availability

STP43N60DM2 is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, solar microinverters, and EV on-board chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP43N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ DM2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and resonant converter topologies demanding low Qrr and rugged dv/dt performance.

FAQ

Is STP43N60DM2 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its fast-recovery body diode (trr = 120 ns, Qrr = 0.6 µC at 25 °C) and low output capacitance (Coss eq. = 200 pF) enable reliable ZVS turn-on in phase-shifted full-bridge and LLC resonant converters. The 50 V/ns dv/dt ruggedness further ensures immunity to voltage transients during resonant transitions.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 21 A at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating accounts for thermal limits given R_thj-case = 0.50 °C/W and T_j(max) = 150 °C, ensuring safe operation without exceeding junction temperature.

Does STP43N60DM2 require an external gate Zener diode?

No. The device integrates Zener protection between gate and source, rated for ±25 V, which clamps transient gate voltage spikes during switching. External gate protection is unnecessary in typical SMPS layouts unless extreme ESD or lightning surge environments are present.

How does the body diode performance compare between STP43N60DM2 and standard 600 V MOSFETs?

Unlike standard 600 V MOSFETs with trr > 500 ns and Qrr > 5 µC, STP43N60DM2 achieves trr = 120 ns and Qrr = 0.6 µC at 25 °C-reducing diode conduction loss by >80% and enabling operation in soft-switched topologies without external diodes.

STP43N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 93mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP43N60DM2 FAQ

1.How can I place an order for STP43N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP43N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP43N60DM2 reliable?

The price and inventory of STP43N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP43N60DM2 is usually 5 days.

3.What payment methods are accepted for STP43N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP43N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP43N60DM2?

STP43N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP43N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP43N60DM2?

For technical support, including STP43N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP43N60DM2 requirements.

6.How does Aetrix verify that STP43N60DM2 is sourced from the original manufacturer or authorized distributors?

All STP43N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP43N60DM2 meets industry standards.

7.What is the process for return or replacement of STP43N60DM2?

All STP43N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STP43N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP43N60DM2 part is unused and in its original packaging.

Return procedure for STP43N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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