STMicroelectronics STP45N10F7
- Part No.:
- STP45N10F7
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP45N10F7.pdf
- Description:
- MOSFET N-CH 100V 45A TO220
- Quantity:
- Payment:

- Shipping:

Inventory:3,999
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Product details
Overview
STP45N10F7 from STMicroelectronics is an N-channel 100 V, 45 A Power MOSFET in TO-220 package, featuring 0.0145 Ω typ. RDS(on), 25 nC total gate charge, and 190 mJ single-pulse avalanche energy. It delivers high-current switching for DC-DC converters, motor drives, and industrial power supplies where low conduction loss and robust transient handling are critical.
For engineers reviewing the STP45N10F7 datasheet, STP45N10F7 pinout, STP45N10F7 application, or STP45N10F7 equivalent, this device is selected for high-efficiency 100 V switching stages requiring stable RDS(on) over temperature, fast turn-on/turn-off (15 ns td(on), 8 ns tf), and proven avalanche ruggedness in unclamped inductive loads.
Technical Context
This MOSFET employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while minimizing Crss/Ciss ratio (25 pF / 1640 pF ≈ 0.015) for reduced EMI sensitivity. Its enhanced charge distribution enables efficient hard-switching at high frequencies without compromising safe operating area integrity.
The device operates with ±20 V gate drive, supports continuous drain current up to 45 A at TC = 25 °C (32 A at 100 °C), and maintains stable VGS(th) (2.5–4.5 V) and RDS(on) across –55 to 175 °C junction temperature range-critical for automotive and industrial thermal cycling environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V bus systems with 2× safety margin. |
| RDS(on) typ. | 0.0145 Ω @ VGS = 10 V, ID = 22.5 A - Delivers ≤1.5 W conduction loss at 45 A, enabling compact heatsink design. |
| Qg | 25 nC - Enables fast switching with moderate gate driver strength (e.g., 1 A peak suffices for <100 ns transition). |
| EAS | 190 mJ - Sustains unclamped inductive energy without failure, eliminating need for external snubbers in relay/motor coil drivers. |
| tr/tf | 17 ns / 8 ns - Supports >1 MHz switching in resonant topologies while limiting di/dt-induced noise. |
| TJ max | 175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating. |
Pinout & Package
STP45N10F7 uses TO-220 type A package (standard 3-lead through-hole) with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when mounted to grounded heat sinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Low-impedance source node; connects to system ground or low-side return; referenced for gate drive. |
| 2 (Gate) | Control input for channel conduction | High-impedance MOS gate; requires 10 V for full enhancement; sensitive to ESD and ringing. |
| 3 (Drain) + Tab | Main power output and thermal interface | Drain terminal tied to metal tab; carries full load current and dissipates 60 W max; must be electrically isolated if heatsink is grounded. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.0145 Ω typ. reduces I²R losses by >30% vs. prior-generation 100 V MOSFETs at same current density. |
| Low Crss/Ciss ratio | 25 pF / 1640 pF = 0.015 minimizes Miller-induced shoot-through risk and improves EMI immunity in noisy industrial settings. |
| High avalanche ruggedness | 190 mJ single-pulse rating allows reliable operation in inductive switching without external clamping components. |
| Enhanced thermal resistance | Rthj-case = 2.5 °C/W enables 60 W dissipation with ≤150 °C case rise above ambient-ideal for convection-cooled designs. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor High-Side Driver |
|---|---|
Use Scenario: 48 V input, 12 V output synchronous buck converter in telecom power shelf. IC Role / Device Role / Timing Role: Main high-side switching element controlling energy transfer into output inductor; switched at 300 kHz. Use Value: 0.0145 Ω RDS(on) limits conduction loss to 3.0 W at 45 A, improving efficiency by 1.2% over 0.018 Ω alternatives. |
Use Scenario: 24 V battery-powered robotic arm with 30 A peak motor current. IC Role / Device Role / Timing Role: High-side switch enabling bidirectional control via H-bridge; handles 180 A pulsed current during stall conditions. Use Value: 190 mJ avalanche energy rating prevents failure during motor commutation spikes, eliminating need for external TVS. |
| Industrial AC-DC PFC Stage | Hot-Swap Controller Load Switch |
Use Scenario: Active PFC boost stage in 1 kW server PSU operating at 100 kHz. IC Role / Device Role / Timing Role: Boost switch conducting 45 A RMS; subjected to high dv/dt and repetitive avalanche stress. Use Value: Low Crss/Ciss ratio suppresses gate oscillation under 100 V/ns dv/dt, reducing EMI filter size by 25%. |
Use Scenario: 48 V backplane hot-swap module protecting downstream FPGA and memory banks. IC Role / Device Role / Timing Role: Inrush-limiting and fault-isolation switch; activated during board insertion with controlled slew rate. Use Value: 2.5–4.5 V VGS(th) enables precise gate biasing with standard op-amp controllers, ensuring <50 µs turn-on delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540N | RDS(on) = 0.044 Ω @ 10 V (3× higher); Qg = 71 nC; no specified EAS rating | Limited to lower-frequency (<100 kHz), lower-current (<20 A) applications due to higher loss and undefined avalanche capability | Acceptable only for cost-sensitive, non-critical linear or low-speed switching where thermal margin exists. |
| IXTH50N10L2 | RDS(on) = 0.015 Ω; Qg = 42 nC; EAS = 220 mJ; TO-247 package | Higher gate charge increases driver complexity; TO-247 requires larger PCB footprint and mounting hardware | Preferred for ultra-high-reliability 100 V systems needing extra avalanche margin, but adds layout and cost overhead. |
Compared with IRF540N, STP45N10F7 delivers 67% lower conduction loss and verified avalanche robustness; versus IXTH50N10L2, it trades 40% lower gate charge and TO-220 compatibility for slightly reduced EAS, making it optimal for space-constrained, medium-power industrial switches.
Availability
STP45N10F7 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for STP45N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.
STP45N10F7 belongs to the STripFET™ F7 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 100 V industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current for STP45N10F7 at 100 °C case temperature?
The maximum continuous drain current is 32 A at TC = 100 °C, as specified in Table 2 of the official datasheet (DocID024455 Rev 2). This derating from 45 A at 25 °C reflects thermal limitations of the TO-220 package's 2.5 °C/W junction-to-case resistance under sustained high-temperature operation.
Is the TO-220 tab electrically isolated from the leads?
No-the metal tab is internally connected to the drain terminal (Pin 3), as confirmed by Figure 1 (internal schematic) and package outline diagrams in Section 4.3. Electrical isolation from the heatsink is mandatory unless the heatsink is floating or drain-referenced.
Does STP45N10F7 have integrated gate protection diodes?
No-STP45N10F7 does not include internal gate-source or gate-drain protection diodes. External Zener clamping (e.g., 15 V TVS between gate and source) is required to prevent gate oxide damage from transients exceeding ±20 V absolute maximum rating.
Can STP45N10F7 replace STD45N10F7 in a DPAK-based PCB layout?
No-STP45N10F7 uses TO-220 packaging with 2.54 mm lead pitch and vertical mounting, while STD45N10F7 uses DPAK (TO-252) with surface-mount footprint and 2.28 mm lead pitch. Mechanical and thermal interfaces are incompatible; redesign of footprint, solder stencil, and heatsinking is required.
STP45N10F7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VII
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1640 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP45N10F7 FAQ
1.How can I place an order for STP45N10F7 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP45N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP45N10F7 reliable?
The price and inventory of STP45N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP45N10F7 is usually 5 days.
3.What payment methods are accepted for STP45N10F7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP45N10F7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP45N10F7?
STP45N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP45N10F7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP45N10F7?
For technical support, including STP45N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP45N10F7 requirements.
6.How does Aetrix verify that STP45N10F7 is sourced from the original manufacturer or authorized distributors?
All STP45N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP45N10F7 meets industry standards.
7.What is the process for return or replacement of STP45N10F7?
All STP45N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STP45N10F7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP45N10F7 part is unused and in its original packaging.
Return procedure for STP45N10F7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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