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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP45N60DM2AG

Name: STP45N60DM2AG
Brand: STMicroelectronics
SKU: STP45N60DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP45N60DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP45N60DM2AG.pdf

Description:: MOSFET N-CH 600V 34A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP45N60DM2AG from STMicroelectronics is an AEC-Q101-qualified N-channel 600 V, 93 mΩ (max) MDmesh DM2 Power MOSFET in TO-220 package, featuring fast-recovery body diode (trr = 120 ns @ 25 °C), low Qg (56 nC), and 100% avalanche tested. It delivers high dv/dt ruggedness (50 V/ns) and is engineered for ZVS phase-shift converters and full-bridge topologies in automotive-grade power supplies.

For engineers reviewing the STP45N60DM2AG datasheet, STP45N60DM2AG pinout, STP45N60DM2AG application, or STP45N60DM2AG equivalent, key selection criteria include its 85 mΩ typical RDS(on) at 10 V, 34 A continuous drain current at TC = 25 °C, fast trr and low Qrr (0.6 µC), and Zener-protected gate structure - all critical for high-efficiency, high-reliability switching designs.

Technical Context

This device belongs to ST's MDmesh DM2 series, optimized for high-voltage resonant and soft-switching topologies. Its fast-recovery body diode enables reduced switching losses in bridge configurations, while extremely low input capacitance (Ciss = 2500 pF) and gate charge support high-frequency operation up to 500 kHz.

The MOSFET integrates a Zener-protected gate oxide and is fully rated for unclamped inductive switching (EAS = 800 mJ). Its 0.5 °C/W junction-to-case thermal resistance and 50 V/ns dv/dt ruggedness ensure robustness under transient overvoltage and rapid voltage transitions in automotive and industrial SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V DC bus and 3-phase rectified systems without derating.
R_DS(on) max	93 mΩ at V_GS = 10 V, I_D = 17 A - Enables <1.5 W conduction loss at 34 A, reducing heatsink requirements.
Q_g	56 nC - Low gate drive energy allows use with standard gate drivers (e.g., STGAP2S) at >300 kHz.
t_rr	120 ns @ T_J = 25 °C - Minimizes reverse recovery losses in synchronous rectification and LLC resonant converters.
E_AS	800 mJ - Guarantees single-pulse avalanche survivability during load dump or short-circuit events.
dv/dt ruggedness	50 V/ns - Withstands steep voltage transients in hard-switched bridges without spurious turn-on.
Thermal R_thJC	0.5 °C/W - Enables 250 W dissipation with modest heatsinking (e.g., 10 cm² aluminum fin).

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), 3-pin through-hole mounting. Tab is electrically connected to drain (D) and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±25 V drive; low C_iss (2500 pF) reduces driver loading.
2 (TAB/D)	Drain	Main high-side power terminal; tab is electrically and thermally tied to drain; must be insulated if mounted to heatsink.
3 (S)	Source	Power return and reference node; used for current sensing and gate drive referencing in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and charging systems per stress test requirements (HTOL, TC, HTRB).
Fast-recovery body diode	trr = 120 ns and Qrr = 0.6 µC enable efficient freewheeling in half/full-bridge without external SiC diodes.
Zener-protected gate	Integrated gate oxide protection prevents ESD-induced failure during assembly and system-level transients.
Extremely low Q_g and C_iss	56 nC total gate charge and 2500 pF input capacitance reduce switching losses and driver complexity.
100% avalanche tested	Each unit undergoes unclamped inductive switching test to 800 mJ, ensuring field reliability under fault conditions.

Applications

On-Board Charger (OBC)

DC-DC Bidirectional Converter

Use Scenario: Primary-side switching in 6.6 kW OBCs converting AC grid to 400 V battery bus using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in ZVS-controlled bridge; body diode conducts during dead-time.

Use Value: Low Qrr (0.6 µC) and fast trr (120 ns) minimize circulating current loss and improve ZVS window margin at 100–200 kHz.

Use Scenario: Isolated bidirectional DC-DC stage in vehicle-to-grid (V2G) systems transferring power between 400 V battery and 800 V traction inverter.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) converter operating at 300 kHz.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high dV/dt cross-conduction, enabling stable soft-switching across wide voltage ranges.

Industrial UPS Inverter

EV Charging Station PFC Stage

Use Scenario: Output H-bridge in 10 kVA online UPS delivering clean 230 VAC from 400 V DC bus with <1% THD.

IC Role / Device Role / Timing Role: Final power stage switch; handles 34 A RMS output current with low R_DS(on) to limit conduction loss.

Use Value: 0.5 °C/W R_thJC allows direct mounting to chassis heatsink, eliminating thermal interface material and reducing thermal resistance by ~30% vs. standard TO-220.

Use Scenario: Boost switch in 22 kW three-phase PFC front-end for EV charging stations operating at 98.5% peak efficiency.

IC Role / Device Role / Timing Role: High-voltage boost switch handling 600 V blocking and 34 A peak current in interleaved 6-phase design.

Use Value: 600 V V_DS rating with 100% avalanche testing ensures safe operation during line surges and neutral-loss events common in public charging infrastructure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CPFKSA1	99 mΩ R_DS(on) max, 650 V, CoolMOS C7; no integrated fast diode; higher Q_rr (1.2 µC).	Requires external anti-parallel SiC diode for ZVS; better suited for hard-switched PFC than bridge freewheeling.	Prefer when highest V_DS margin (650 V) is needed and body diode performance is secondary.
IXFH42N60P3	600 V, 105 mΩ, 42 A; no AEC-Q101; slower trr (250 ns); higher Q_g (110 nC).	Lacks automotive qualification and fast-recovery diode; limited to industrial UPS and non-automotive SMPS.	Select only for cost-sensitive industrial designs where AEC-Q101 and ZVS capability are not required.

Compared with IPW60R099CPFKSA1 and IXFH42N60P3, STP45N60DM2AG uniquely combines AEC-Q101 compliance, fast-recovery diode (120 ns), and Zener gate protection - making it the only choice for automotive ZVS converters requiring both reliability and low recovery loss.

Availability

STP45N60DM2AG is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and industrial UPS inverters requiring stable component supply, automotive-grade qualification, and high dv/dt ruggedness.

Supply support for STP45N60DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This part belongs to the MDmesh DM2 series - ST's high-voltage MOSFET platform specifically developed for high-efficiency, high-frequency resonant and soft-switching power converters in automotive and industrial applications.

FAQ

Is STP45N60DM2AG pin-compatible with earlier STPxxN60DM2 variants?

Yes - STP45N60DM2AG uses the same TO-220 type A package and identical 3-pin layout (G-D-S) as STP30N60DM2 and STP55N60DM2. Pin functions, mechanical dimensions, and thermal pad configuration are fully consistent, enabling drop-in replacement in existing layouts where R_DS(on) and current rating meet design margins.

What is the maximum recommended gate resistor for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with V_GS = 10 V drive, a 4.7 Ω gate resistor is validated per datasheet Figure 18. This value balances switching speed (td(on) = 29 ns, tf = 6 ns) and gate oscillation suppression. Lower values (<2.2 Ω) risk ringing; higher values (>10 Ω) increase switching losses beyond 1.2 W at 34 A.

Does the body diode conduct during zero-voltage switching transitions?

Yes - in phase-shifted full-bridge and LLC topologies, the body diode conducts during dead-time intervals before the complementary switch turns on. The 120 ns trr and 0.6 µC Qrr are measured under ISD = 34 A, di/dt = 100 A/µs, ensuring minimal reverse recovery loss and reliable ZVS initiation across temperature.

Can STP45N60DM2AG be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature, per Figure 9) enables natural current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 10 Ω gate resistors to prevent oscillation; derate total current to ≤60 A for two devices.

STP45N60DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 93mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP45N60DM2AG FAQ

1.How can I place an order for STP45N60DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STP45N60DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP45N60DM2AG reliable?

The price and inventory of STP45N60DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP45N60DM2AG is usually 5 days.

3.What payment methods are accepted for STP45N60DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP45N60DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP45N60DM2AG?

STP45N60DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP45N60DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP45N60DM2AG?

For technical support, including STP45N60DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP45N60DM2AG requirements.

6.How does Aetrix verify that STP45N60DM2AG is sourced from the original manufacturer or authorized distributors?

All STP45N60DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP45N60DM2AG meets industry standards.

7.What is the process for return or replacement of STP45N60DM2AG?

All STP45N60DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STP45N60DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP45N60DM2AG part is unused and in its original packaging.

Return procedure for STP45N60DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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