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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP46N60M6

Name: STP46N60M6
Brand: STMicroelectronics
SKU: STP46N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP46N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP46N60M6.pdf

Description:: MOSFET N-CH 600V 36A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:9,495

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Product details

Overview

STP46N60M6 from STMicroelectronics is an N-channel 600 V, 36 A MDmesh M6 superjunction power MOSFET in TO-220 package, featuring 68 mΩ typ. R_DS(on), 53.5 nC total gate charge, and 100% avalanche tested. It delivers low conduction loss and high dv/dt ruggedness (100 V/ns) for hard-switching PFC and LLC resonant converters.

For engineers reviewing the STP46N60M6 datasheet, STP46N60M6 pinout, STP46N60M6 application, or STP46N60M6 equivalent, this device is selected for high-efficiency 600 V switching stages where low Q_g/R_DS(on) ratio, robust body diode recovery (t_rr = 267 ns), and SOA-limited pulsed current (126 A) are critical design requirements.

Technical Context

This MOSFET employs ST's MDmesh M6 silicon process, optimizing R_DS(on) per die area while maintaining fast, controlled switching via reduced C_iss (2340 pF) and C_rss (3.7 pF). Its Zener-protected gate enables ±25 V V_GS tolerance without external clamping.

The device integrates a low-Q_rr (2.8 µC), soft-recovery source-drain diode with I_SDM = 126 A and t_rr < 440 ns at 150 °C - enabling reliable operation in discontinuous conduction mode (DCM) and quasi-resonant topologies without snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus with margin
R_DS(on) max	80 mΩ - limits conduction loss to ≤10.4 W at 36 A continuous, enabling compact heatsink design
I_D cont @ T_case = 100 °C	23 A - defines usable current in thermally constrained enclosures without forced air
Q_g	53.5 nC - determines gate drive power requirement (~1.6 W at 100 kHz, 10 V swing)
t_rr	267 ns - enables clean turn-on in inductive loads with minimal voltage overshoot and EMI
E_AS	760 mJ - ensures single-pulse unclamped inductive switching survivability without external protection
R_thj-case	0.5 °C/W - allows 250 W dissipation at ΔT = 125 °C, supporting high-power density layouts

Pinout & Package

TO-220 package (Type A, ECOPACK® compliant) with isolated tab (drain-connected), 3-pin vertical mounting configuration. Tab serves as thermal and electrical connection point for drain.

Pin/Terminal	Circuit Role	Design Meaning
Tab (D)	Drain	High-current output node; electrically and thermally coupled to PCB copper pour or heatsink
G (Pin 1)	Gate	Control input requiring <1.6 Ω series resistance to damp ringing during fast switching
S (Pin 3)	Source	Power return path and gate reference; must be low-inductance layout to minimize V_GS noise

Key Features

Feature	Design Value
MDmesh M6 silicon technology	Delivers 15% lower R_DS(on) per mm² vs prior MDmesh generations, reducing die size and cost
Zener-protected gate	Eliminates need for external gate clamp diodes in high-noise industrial environments
100% avalanche tested	Guarantees E_AS ≥ 760 mJ across production lot, enabling robust overvoltage fault handling
Low C_rss / C_iss ratio	3.7 pF / 2340 pF = 0.0016 - improves Miller immunity and reduces gate drive losses in high-frequency operation
Soft-recovery body diode	t_rr = 267 ns with low I_RRM (20.8 A) minimizes reverse recovery spikes in bridge-leg configurations

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–200 kHz with 600 V blocking and 36 A peak current.

Use Value: Low R_DS(on) (68 mΩ typ.) cuts conduction loss by 22% vs legacy 650 V MOSFETs, improving full-load efficiency to >96%.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive feeding 3-phase induction motor.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM stage with unclamped inductive load stress.

Use Value: 100 V/ns dv/dt ruggedness and 126 A pulsed rating prevent false turn-on and ensure reliable commutation under motor stall conditions.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Boost PFC switch in bi-directional 11 kW OBC with wide AC input range (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch handling 36 A RMS current at 65 kHz.

Use Value: 53.5 nC Q_g enables efficient gate driving with low-loss SiC drivers, reducing driver thermal load by 30%.

Use Scenario: DC-link switch in 5 kW string inverter interfacing photovoltaic array to grid.

IC Role / Device Role / Timing Role: LLC resonant converter primary switch managing 600 V DC bus and 23 A continuous current at 250 kHz.

Use Value: 0.5 °C/W R_thj-case supports natural convection cooling, eliminating fan dependency and improving system MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7XKSA1	R_DS(on) = 99 mΩ (higher), Q_g = 45 nC (lower), TO-220FP package (lower power dissipation)	Lower peak current capability (27 A vs 36 A); suited for space-constrained but lower-power designs	Select when board footprint is limited and thermal budget permits higher R_DS(on) penalty
STW48N60M2	R_DS(on) = 70 mΩ (slightly higher), E_AS = 620 mJ (lower), no Zener gate protection	Lacks integrated gate Zener; requires external clamping in noisy environments	Choose only if gate drive circuit already includes robust clamping and avalanche margin is relaxed

Compared with IPP60R099C7XKSA1 and STW48N60M2, STP46N60M6 provides the highest pulsed current rating (126 A), strongest avalanche robustness (760 mJ), and integrated gate protection - making it optimal for mission-critical 600 V switching where reliability under transient stress is non-negotiable.

Availability

STP46N60M6 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STP46N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems operating above 400 V DC bus.

FAQ

What is the maximum safe operating temperature for STP46N60M6 junction?

The absolute maximum junction temperature is 150 °C, with continuous operation rated up to that limit. The device's R_DS(on) increases linearly with temperature (normalized to 2.5× at 150 °C), and its V_(BR)DSS decreases slightly (0.9× at 150 °C), both confirmed in Figures 9 and 10 of DS12394. Thermal derating must follow the SOA curve in Figure 1.

Does STP46N60M6 require external gate clamping?

No - the device integrates a Zener diode between gate and source, rated for ±25 V V_GS, eliminating the need for external gate clamping components. This is explicitly stated in the "Features" section and verified in the Absolute Maximum Ratings table (V_GS = ±25 V).

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 1.6 V at 36 A and t_rr = 267 ns at 25 °C, which is softer and slower than Schottky diodes but avoids reverse recovery snap-off and EMI spikes. Its Q_rr = 2.8 µC is optimized for PFC and LLC use cases where synchronous rectification is not implemented.

Can STP46N60M6 replace older MDmesh devices like STP36N60M2 in existing designs?

Yes - it offers lower R_DS(on) (68 mΩ vs 90 mΩ), improved switching speed (t_d(off) = 48.4 ns vs 65 ns), and enhanced avalanche rating (760 mJ vs 520 mJ). Pinout and package are identical (TO-220), enabling drop-in replacement with measurable efficiency gains and improved ruggedness.

STP46N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP46N60M6 FAQ

1.How can I place an order for STP46N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP46N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP46N60M6 reliable?

The price and inventory of STP46N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP46N60M6 is usually 5 days.

3.What payment methods are accepted for STP46N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP46N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP46N60M6?

STP46N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP46N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP46N60M6?

For technical support, including STP46N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP46N60M6 requirements.

6.How does Aetrix verify that STP46N60M6 is sourced from the original manufacturer or authorized distributors?

All STP46N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP46N60M6 meets industry standards.

7.What is the process for return or replacement of STP46N60M6?

All STP46N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STP46N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP46N60M6 part is unused and in its original packaging.

Return procedure for STP46N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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