STMicroelectronics STP46NF30
- Part No.:
- STP46NF30
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP46NF30.pdf
- Description:
- MOSFET N CH 300V 42A TO-220
- Quantity:
- Payment:

- Shipping:

Inventory:997
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STP46NF30 from STMicroelectronics is an automotive-grade N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 300 V drain-source voltage, 75 mΩ maximum RDS(on) at VGS = 10 V and ID = 17 A, and 42 A continuous drain current at TC = 25 °C. It serves as a high-voltage primary-side switch in isolated DC-DC converters for telecom power supplies and industrial SMPS.
For engineers reviewing the STP46NF30 datasheet, STP46NF30 pinout, STP46NF30 application, or STP46NF30 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, 10 V/ns dv/dt capability, 90 nC total gate charge, 175 °C max junction temperature, and AEC-Q101 qualification for automotive power systems.
Technical Context
This device employs ST's STripFET II process to minimize input capacitance (Ciss = 3200 pF) and gate charge-critical for high-frequency switching efficiency in hard-switched topologies. Its low RDS(on) and robust body diode (trr = 215 ns, Qrr = 1.7 µC) support fast recovery in flyback and resonant converter designs.
The MOSFET features a fully rated 300 V breakdown voltage (V(BR)DSS), ±20 V gate-source voltage tolerance, and thermal resistance RthJC = 0.5 °C/W-enabling high-power operation with minimal heatsink requirements in compact TO-220 form factor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 300 V - Supports primary-side switching in 240 VAC-derived offline and telecom 48 V input systems without derating. |
| RDS(on) max | 75 mΩ @ VGS = 10 V, ID = 17 A - Enables <1.3 W conduction loss at 42 A peak, reducing thermal stress in high-current SMPS. |
| Qg | 90 nC - Low gate drive energy requirement allows use with standard gate drivers (e.g., UC384x, IR2110) without boost stages. |
| ID cont | 42 A @ TC = 25 °C - Sustains full-load operation in 500–800 W power supplies when mounted on ≥1 in² 2-oz copper PCB. |
| EAS | 290 mJ - Withstands unclamped inductive switching events in flyback and forward converters without failure. |
| trr | 215 ns @ ISD = 34 A, di/dt = 100 A/µs - Limits switching losses and EMI during diode commutation in quasi-resonant topologies. |
| TJ max | 175 °C - Permits operation in under-hood automotive environments and high-ambient industrial enclosures. |
Pinout & Package
STP46NF30 is housed in a TO-220 package with isolated tab (drain-connected). The package provides mechanical robustness, standardized mounting, and direct heatsink interface for high-power dissipation up to 300 W at TC = 25 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring ≤±20 V drive; 90 nC total charge necessitates low-impedance driver path to minimize switching time. |
| 2 (D) | Drain | High-voltage output node connected to internal die substrate and external heatsink tab; electrically isolated from mounting surface per TO-220-A spec. |
| 3 (S) | Source | Power return reference for gate drive and load current; must be routed with low inductance to suppress ringing during fast dI/dt transitions. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test requirements including HTOL, TC, and UHAST. |
| 100% avalanche tested | Each unit subjected to single-pulse unclamped inductive switching at IAR = 26 A, ensuring field reliability in overvoltage fault conditions. |
| Exceptional dv/dt immunity | Rated 10 V/ns - prevents spurious turn-on during high-slew-rate transients in high-density power modules and motor drives. |
| Low gate charge (Qg) | 90 nC enables >200 kHz switching in LLC and phase-shifted full-bridge converters while maintaining <1 W driver loss. |
| STripFET II process | Reduces Ciss/Coss ratio to ~7.2:1 - improves zero-voltage switching (ZVS) margin and reduces capacitive turn-off loss. |
Applications
| Telecom AC-DC Rectification | Industrial SMPS Primary Switch |
|---|---|
|
Use Scenario: High-efficiency 48 V input rectification stage in 1U telecom server PSUs delivering 600–800 W. IC Role / Device Role / Timing Role: N-channel high-side switch in active clamp forward topology operating at 150–200 kHz. Use Value: 75 mΩ RDS(on) and 90 nC Qg reduce conduction + switching losses by 18% vs. legacy 100 mΩ MOSFETs, enabling 92%+ efficiency at full load. |
Use Scenario: Main switching element in 3 kW industrial welder power supply with wide input range (300–800 VDC). IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge configuration with ZVS-assisted turn-on. Use Value: 300 V rating and 290 mJ EAS ensure safe operation during bus overvoltage transients and short-circuit events without snubber redesign. |
| Automotive On-Board Charger (OBC) | UPS Inverter Stage |
|
Use Scenario: Bidirectional DC-DC stage in 11 kW EV on-board charger interfacing 400 V battery and 48 V auxiliary system. IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in dual-active-bridge (DAB) topology. Use Value: AEC-Q101 qualification and 175 °C TJ max allow direct integration into OBC power stack without derating, reducing thermal management complexity. |
Use Scenario: Output H-bridge in 5 kVA line-interactive UPS with pure sine wave inverter and battery backup. IC Role / Device Role / Timing Role: Low-loss switching device in 16 kHz PWM inverter leg driving transformer-coupled output filter. Use Value: 215 ns reverse recovery time and 1.7 µC Qrr minimize shoot-through risk and diode conduction loss during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW46NF30 | Same die, TO-247 package; RthJC = 0.5 °C/W identical, but higher thermal mass and larger footprint. | Better suited for >1 kW continuous conduction mode (CCM) PFC and high-reliability industrial inverters where heatsink contact area exceeds 4 cm². | Select when board space permits and thermal design requires lower RthJA (50 °C/W vs. 62.5 °C/W for TO-220). |
| IPP60R099C7 | 650 V Si MOSFET, 99 mΩ RDS(on), 71 nC Qg; CoolMOS C7 technology with lower Coss but no AEC-Q101 rating. | Targeted at universal-input 85–265 VAC SMPS where 650 V rating enables simpler input stage design, but unsuitable for automotive under-hood use. | Choose only for non-automotive 650 V applications requiring lower gate charge and higher voltage margin; not drop-in compatible due to different pinout and drive characteristics. |
Compared with STW46NF30 and IPP60R099C7, STP46NF30 offers optimal balance of automotive qualification, TO-220 manufacturability, and 300 V/42 A capability-making it preferred for cost-sensitive, volume automotive and telecom power designs where package standardization and qualification outweigh marginal thermal or voltage advantages.
Availability
STP46NF30 is available at Aetrix Electronics and suitable for telecom AC-DC rectification, industrial SMPS primary switching, and automotive on-board charger (OBC) designs requiring stable component supply across multi-year production cycles.
Supply support for STP46NF30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing and broad IP portfolio.
STP46NF30 belongs to the STripFET II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive, telecom, and industrial power conversion systems demanding ruggedness and consistent parametric performance.
FAQ
Is STP46NF30 pin-compatible with STB46NF30 or STW46NF30?
No-STP46NF30 uses TO-220 package with G-D-S pinout (1-2-3), STB46NF30 uses D²PAK (TO-263) with G-S-D pinout (1-3-2), and STW46NF30 uses TO-247 with G-D-S pinout (1-2-3) but different lead spacing and tab geometry. Mechanical and thermal mounting differ significantly; PCB layout and heatsink interface are not interchangeable.
What is the maximum recommended gate resistor value for 200 kHz operation?
For reliable 200 kHz switching with <10 ns rise/fall control, gate resistor should be ≤10 Ω when driven by a 2 A peak gate driver (e.g., IRS2186). At 90 nC Qg, this limits turn-on time to ~900 ns and ensures adequate Miller immunity without excessive driver power dissipation.
Does STP46NF30 require a negative gate turn-off voltage?
No-STP46NF30 operates reliably with 0 V turn-off and +10 V turn-on. Its VGS(th) range (2–4 V) and low Ciss/Crss ratio prevent false triggering; negative bias is unnecessary unless operating in extreme dv/dt environments (>15 V/ns) with long gate traces.
Can STP46NF30 replace IRFP460 in existing designs?
Yes-with caveats: both are 500 V-rated TO-247 devices, but STP46NF30 is 300 V-rated and TO-220. Direct replacement is unsafe in 400 V bus applications. For 300 V systems, STP46NF30 offers lower RDS(on) (75 mΩ vs. 270 mΩ) and Qg (90 nC vs. 140 nC), but requires PCB rework for TO-220 footprint and revised thermal design.
STP46NF30 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 300 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP46NF30 FAQ
1.How can I place an order for STP46NF30 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP46NF30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP46NF30 reliable?
The price and inventory of STP46NF30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP46NF30 is usually 5 days.
3.What payment methods are accepted for STP46NF30?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP46NF30 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP46NF30?
STP46NF30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP46NF30 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP46NF30?
For technical support, including STP46NF30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP46NF30 requirements.
6.How does Aetrix verify that STP46NF30 is sourced from the original manufacturer or authorized distributors?
All STP46NF30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP46NF30 meets industry standards.
7.What is the process for return or replacement of STP46NF30?
All STP46NF30 units undergo pre-shipment inspection (PSI). If there is an issue with STP46NF30, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP46NF30 part is unused and in its original packaging.
Return procedure for STP46NF30:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STP46NF30 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
